Overview
The BC859CLT1 is a general-purpose PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for a wide range of applications requiring low to medium power amplification and switching. The transistor is packaged in a SOT-23-3 (TO-236) surface mount package, making it suitable for modern electronic designs where space is a concern.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Transistor Type | PNP | |
Collector-Emitter Voltage (VCEO) | 30 | V |
Collector-Base Voltage (VCBO) | 30 | V |
Emitter-Base Voltage (VEBO) | 5.0 | V |
Collector Current (IC) | 100 | mA |
DC Current Gain (hFE) | 220 (min) @ 2mA, 5V | |
Collector-Emitter Saturation Voltage (VCE(sat)) | 0.65 V @ IC = 100 mA, IB = 5 mA | V |
Base-Emitter Saturation Voltage (VBE(sat)) | 0.9 V @ IC = 100 mA, IB = 5 mA | V |
Power Dissipation (Pd) | 300 | mW |
Operating Temperature (TJ) | -55 to 150 | °C |
Transition Frequency (fT) | 100 | MHz |
Package | SOT-23-3 (TO-236) |
Key Features
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- High DC current gain (hFE) of 220 (min) at 2mA and 5V, providing reliable amplification.
- Low collector-emitter saturation voltage (VCE(sat)) of 0.65 V, reducing power consumption in saturation mode.
- High transition frequency (fT) of 100 MHz, suitable for high-frequency applications.
- Surface mount SOT-23-3 package for compact design and ease of mounting.
Applications
- General-purpose amplification and switching in electronic circuits.
- Automotive electronics due to AEC-Q101 qualification and PPAP capability.
- Consumer electronics such as audio amplifiers, power supplies, and control circuits.
- Industrial control systems and automation.
- High-frequency applications such as RF amplifiers and oscillators.
Q & A
- What is the transistor type of the BC859CLT1?
The BC859CLT1 is a PNP bipolar junction transistor (BJT). - What is the maximum collector-emitter voltage (VCEO) of the BC859CLT1?
The maximum collector-emitter voltage (VCEO) is 30 V. - What is the DC current gain (hFE) of the BC859CLT1?
The DC current gain (hFE) is 220 (min) at 2mA and 5V. - What is the operating temperature range of the BC859CLT1?
The operating temperature range is -55 to 150°C. - Is the BC859CLT1 RoHS compliant?
Yes, the BC859CLT1 is Pb-free, halogen-free, and RoHS compliant. - What is the package type of the BC859CLT1?
The package type is SOT-23-3 (TO-236) surface mount. - What is the transition frequency (fT) of the BC859CLT1?
The transition frequency (fT) is 100 MHz. - Is the BC859CLT1 suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications. - What is the maximum collector current (IC) of the BC859CLT1?
The maximum collector current (IC) is 100 mA. - What is the power dissipation (Pd) of the BC859CLT1?
The power dissipation (Pd) is 300 mW.