BC856BLT1G
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onsemi BC856BLT1G

Manufacturer No:
BC856BLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 65V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856BLT1G is a general-purpose PNP bipolar junction transistor (BJT) manufactured by onsemi. This transistor is part of the BC856ALT1G series and is designed for a wide range of applications, including automotive and other sectors requiring high reliability and compliance with stringent standards. The device is packaged in a SOT-23 (TO-236AB) case, making it suitable for surface-mount technology (SMT) assembly.

Key Specifications

ParameterDescription
Transistor TypePNP
Collector-Emitter Voltage (VCEO)65 V
Collector-Base Voltage (VCBO)80 V
Emitter-Base Voltage (VEBO)5.0 V
Collector Current (IC) - Continuous100 mA
Power Dissipation (Pd)0.225 W
Package TypeSOT-23 (TO-236AB)
CompliancePb-Free, Halogen Free/BFR Free, RoHS Compliant

Key Features

  • AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other demanding applications.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, ensuring environmental sustainability.
  • High collector-emitter voltage (VCEO) of 65 V and collector-base voltage (VCBO) of 80 V, providing robust performance.
  • Low noise figure and high current-gain bandwidth product, suitable for various signal processing and switching applications.
  • Compact SOT-23 package, ideal for surface-mount assembly and space-saving designs.

Applications

The BC856BLT1G transistor is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
  • General-purpose switching and amplification: Its high VCEO and low noise figure make it ideal for switching and amplification circuits.
  • Consumer electronics: It can be used in audio amplifiers, power supplies, and other consumer electronic devices.
  • Industrial control systems: Its robust specifications make it suitable for industrial control and automation systems.

Q & A

  1. What is the transistor type of the BC856BLT1G?
    The BC856BLT1G is a PNP bipolar junction transistor.
  2. What is the maximum collector-emitter voltage (VCEO) of the BC856BLT1G?
    The maximum VCEO is 65 V.
  3. What is the package type of the BC856BLT1G?
    The package type is SOT-23 (TO-236AB).
  4. Is the BC856BLT1G RoHS compliant?
    Yes, the BC856BLT1G is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
  5. What is the maximum collector current (IC) of the BC856BLT1G?
    The maximum continuous collector current is 100 mA.
  6. What are the key features of the BC856BLT1G?
    Key features include AEC-Q101 qualification, Pb-Free and RoHS compliance, high VCEO and VCBO, and a compact SOT-23 package.
  7. In what types of applications is the BC856BLT1G commonly used?
    It is commonly used in automotive systems, general-purpose switching and amplification, consumer electronics, and industrial control systems.
  8. What is the power dissipation (Pd) of the BC856BLT1G?
    The power dissipation is 0.225 W.
  9. Is the BC856BLT1G suitable for surface-mount assembly?
    Yes, it is suitable for surface-mount assembly due to its SOT-23 package.
  10. What is the emitter-base voltage (VEBO) of the BC856BLT1G?
    The emitter-base voltage (VEBO) is 5.0 V.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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In Stock

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Similar Products

Part Number BC856BLT1G BC856BLT3G BC856BWT1G BC850BLT1G BC856ALT1G BC856BLT1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Obsolete
Transistor Type PNP PNP PNP NPN PNP -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) 65 V 65 V 65 V 45 V 65 V -
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 600mV @ 5mA, 100mA 650mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 220 @ 2mA, 5V 220 @ 2mA, 5V 200 @ 2mA, 5V 125 @ 2mA, 5V -
Power - Max 300 mW 300 mW 150 mW 225 mW 300 mW -
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SC-70-3 (SOT323) SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

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