Overview
The SBC856BLT1G is a general-purpose PNP bipolar transistor produced by ON Semiconductor. It is designed for low-power surface mount applications and is housed in the SOT-363/SC-88 package. This transistor is part of the BC856 series, which includes various models tailored for different requirements. The SBC856BLT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications that require unique site and control change requirements. The device is Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -65 | V |
| Collector-Base Voltage | VCBO | -80 | V |
| Emitter-Base Voltage | VEBO | -5.0 | V |
| Collector Current - Continuous | IC | -100 mA | mA |
| DC Current Gain (IC = -10 mA, VCE = -5.0 V) | hFE | 220 - 420 | |
| Collector-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) | VCE(sat) | -0.3 - 0.65 | V |
| Base-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) | VBE(sat) | -0.7 - 0.9 | V |
| Current-Gain - Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) | fT | 100 MHz | MHz |
| Output Capacitance (VCB = -10 V, f = 1.0 MHz) | Cob | 4.5 pF | pF |
| Noise Figure (IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) | NF | 10 dB | dB |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- Housed in the SOT-363/SC-88 package, designed for low-power surface mount applications.
- General-purpose amplifier applications.
- High DC current gain and low collector-emitter saturation voltage.
- Low noise figure and high current-gain - bandwidth product.
Applications
- General-purpose amplifier circuits.
- Automotive electronics.
- Low-power surface mount applications.
- Audio and signal processing circuits.
- Switching and logic circuits.
Q & A
- What is the collector-emitter voltage rating of the SBC856BLT1G transistor?
The collector-emitter voltage rating is -65 V.
- What package type is the SBC856BLT1G transistor housed in?
The transistor is housed in the SOT-363/SC-88 package.
- Is the SBC856BLT1G transistor RoHS compliant?
- What are the typical applications of the SBC856BLT1G transistor?
The transistor is used in general-purpose amplifier circuits, automotive electronics, and low-power surface mount applications.
- What is the DC current gain of the SBC856BLT1G transistor?
The DC current gain (hFE) ranges from 220 to 420 at IC = -10 mA and VCE = -5.0 V.
- What is the collector-emitter saturation voltage of the SBC856BLT1G transistor?
The collector-emitter saturation voltage (VCE(sat)) ranges from -0.3 to -0.65 V.
- What is the current-gain - bandwidth product of the SBC856BLT1G transistor?
The current-gain - bandwidth product (fT) is 100 MHz.
- What is the output capacitance of the SBC856BLT1G transistor?
The output capacitance (Cob) is 4.5 pF at VCB = -10 V and f = 1.0 MHz.
- What is the noise figure of the SBC856BLT1G transistor?
The noise figure (NF) is 10 dB at IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, and BW = 200 Hz.
- Is the SBC856BLT1G transistor suitable for high-temperature applications?
The transistor has a junction and storage temperature range of -55°C to +150°C.
