Overview
The SBC846BLT1G is a general-purpose NPN silicon transistor produced by onsemi. This transistor is part of the BC846ALT1G series, known for its reliability and versatility in various electronic applications. It is designed to meet the requirements of automotive and other applications that demand unique site and control change requirements, and it is AEC-Q101 qualified and PPAP capable. The device is also Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 65 | Vdc |
| Collector-Base Voltage | VCBO | 80 | Vdc |
| Emitter-Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current - Continuous | IC | 100 | mAdc |
| Collector-Emitter Breakdown Voltage (IC = 10 mA) | V(BR)CEO | 65 | V |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VCE(sat) | 0.25 | V |
| Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VBE(sat) | 0.7 | V |
| DC Current Gain (IC = 10 mA, VCE = 5.0 V) | hFE | 110 - 420 | |
| Current-Gain - Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) | fT | 100 | MHz |
| Output Capacitance (VCB = 10 V, f = 1.0 MHz) | Cobo | 4.5 | pF |
Key Features
- Moisture Sensitivity Level: 1
- ESD Rating - Human Body Model: > 4000 V, Machine Model: > 400 V
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements
- Pb-free, halogen-free/BFR-free, and RoHS compliant
- High DC current gain (hFE) with a range of 110 to 420
- Low collector-emitter saturation voltage (VCE(sat)) of 0.25 V
- Low base-emitter saturation voltage (VBE(sat)) of 0.7 V
- High current-gain - bandwidth product (fT) of 100 MHz
Applications
- General-purpose amplification and switching in electronic circuits
- Automotive systems requiring AEC-Q101 qualification
- Consumer electronics such as audio equipment and home appliances
- Industrial control systems and automation
- Medical devices and equipment (excluding life support systems and implantable devices)
Q & A
- What is the maximum collector-emitter voltage (VCEO) for the SBC846BLT1G transistor?
The maximum collector-emitter voltage (VCEO) for the SBC846BLT1G transistor is 65 Vdc.
- What is the ESD rating for the SBC846BLT1G transistor?
The ESD rating for the SBC846BLT1G transistor is > 4000 V for the Human Body Model and > 400 V for the Machine Model.
- Is the SBC846BLT1G transistor RoHS compliant?
- What is the typical DC current gain (hFE) for the SBC846BLT1G transistor?
The typical DC current gain (hFE) for the SBC846BLT1G transistor ranges from 110 to 420.
- What is the collector-emitter saturation voltage (VCE(sat)) for the SBC846BLT1G transistor?
The collector-emitter saturation voltage (VCE(sat)) for the SBC846BLT1G transistor is 0.25 V.
- What is the current-gain - bandwidth product (fT) for the SBC846BLT1G transistor?
The current-gain - bandwidth product (fT) for the SBC846BLT1G transistor is 100 MHz.
- What are the typical applications for the SBC846BLT1G transistor?
The SBC846BLT1G transistor is used in general-purpose amplification and switching, automotive systems, consumer electronics, industrial control systems, and medical devices (excluding life support systems and implantable devices).
- Is the SBC846BLT1G transistor suitable for use in life support systems or implantable medical devices?
No, the SBC846BLT1G transistor is not intended for use in life support systems or any FDA Class 3 medical devices or devices intended for implantation in the human body.
- What is the maximum collector current (IC) for the SBC846BLT1G transistor?
The maximum collector current (IC) for the SBC846BLT1G transistor is 100 mA.
- What is the base-emitter saturation voltage (VBE(sat)) for the SBC846BLT1G transistor?
The base-emitter saturation voltage (VBE(sat)) for the SBC846BLT1G transistor is 0.7 V.
