Overview
The BC847ALT1G is a general-purpose NPN bipolar transistor manufactured by onsemi. This transistor is designed for a wide range of applications, including amplification and switching. It is packaged in a SOT-23 case, making it suitable for surface-mount technology (SMT) assembly. The BC847ALT1G is lead-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | 45 | Vdc |
| Collector-Base Voltage | VCBO | - | - | 50 | Vdc |
| Emitter-Base Voltage | VEBO | - | - | 6.0 | Vdc |
| Collector Current - Continuous | IC | - | - | 100 | mAdc |
| Current Gain (hFE) | hFE | 110 | 200 | 420 | - |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VCE(sat) | - | - | 0.25 | V |
| Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VBE(sat) | - | - | 0.7 | V |
| Base-Emitter Voltage (IC = 10 mA, VCE = 5.0 V) | VBE(on) | - | - | 660 | mV |
| Current-Gain Bandwidth Product (fT) | fT | - | - | 100 | MHz |
Key Features
- General-purpose NPN bipolar transistor in SOT-23 package.
- Lead-free, halogen-free, and RoHS compliant.
- Moisture Sensitivity Level: 1.
- ESD Rating: Human Body Model >4000 V, Machine Model >400 V.
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
- High current gain (hFE) with a range of 110 to 420.
- Low collector-emitter saturation voltage (VCE(sat)) of up to 0.25 V.
- Low base-emitter saturation voltage (VBE(sat)) of up to 0.7 V.
Applications
- Amplification and switching circuits.
- Automotive electronics.
- Consumer electronics.
- Industrial control systems.
- General-purpose electronic devices requiring reliable and efficient transistor performance.
Q & A
- What is the package type of the BC847ALT1G transistor?
The BC847ALT1G transistor is packaged in a SOT-23 case.
- Is the BC847ALT1G transistor RoHS compliant?
- What is the maximum collector-emitter voltage (VCEO) for the BC847ALT1G?
The maximum collector-emitter voltage (VCEO) for the BC847ALT1G is 45 Vdc.
- What is the typical current gain (hFE) of the BC847ALT1G transistor?
The typical current gain (hFE) of the BC847ALT1G transistor ranges from 110 to 420.
- What is the collector-emitter saturation voltage (VCE(sat)) for the BC847ALT1G?
The collector-emitter saturation voltage (VCE(sat)) for the BC847ALT1G is up to 0.25 V.
- Is the BC847ALT1G suitable for automotive applications?
- What is the ESD rating of the BC847ALT1G transistor?
The ESD rating of the BC847ALT1G transistor is >4000 V for the Human Body Model and >400 V for the Machine Model.
- What is the maximum collector current (IC) for the BC847ALT1G transistor?
The maximum collector current (IC) for the BC847ALT1G transistor is 100 mA.
- What is the base-emitter saturation voltage (VBE(sat)) for the BC847ALT1G transistor?
The base-emitter saturation voltage (VBE(sat)) for the BC847ALT1G transistor is up to 0.7 V.
- What is the current-gain bandwidth product (fT) of the BC847ALT1G transistor?
The current-gain bandwidth product (fT) of the BC847ALT1G transistor is up to 100 MHz.
