BC847AWT1G
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onsemi BC847AWT1G

Manufacturer No:
BC847AWT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SC70-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847AWT1G is an NPN bipolar transistor designed for general-purpose amplifier applications. It is manufactured by onsemi and housed in the SOT-323/SC-70 package, which is optimized for low-power surface mount applications. This transistor is part of the BC847 series, known for its reliability and performance in various electronic circuits.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 45 V
Collector-Base Voltage VCBO 50 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current - Continuous IC 100 mA
DC Current Gain (IC = 10 mA, VCE = 5.0 V) hFE 110 - 200 - 420 -
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VCE(sat) 0.25 - 0.6 V
Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VBE(sat) 0.7 - 0.9 V
Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo 4.5 pF
Current-Gain - Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) fT 100 MHz

Key Features

  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Environmentally friendly and compliant with international regulations.
  • Low VCE(sat): Offers low collector-emitter saturation voltage, making it efficient for various amplifier applications.
  • High DC Current Gain: Provides a wide range of DC current gain values, making it versatile for different circuit designs.
  • Small-Signal Characteristics: Features a high current-gain - bandwidth product, suitable for high-frequency applications.

Applications

  • General Purpose Amplifier Applications: Suitable for a wide range of amplifier circuits due to its high DC current gain and low VCE(sat).
  • Automotive Electronics: Qualified for automotive use due to its AEC-Q101 certification and PPAP capability.
  • Consumer Electronics: Used in various consumer electronic devices requiring reliable and efficient transistor performance.
  • Industrial Control Systems: Can be used in industrial control circuits where reliability and performance are critical.

Q & A

  1. What is the collector-emitter voltage rating of the BC847AWT1G transistor?

    The collector-emitter voltage rating is 45 V.

  2. What is the maximum collector current of the BC847AWT1G transistor?

    The maximum collector current is 100 mA.

  3. Is the BC847AWT1G transistor RoHS compliant?

    Yes, the BC847AWT1G transistor is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  4. What is the typical DC current gain of the BC847AWT1G transistor?

    The typical DC current gain ranges from 110 to 420, depending on the specific type (A, B, C).

  5. What is the output capacitance of the BC847AWT1G transistor?

    The output capacitance is 4.5 pF at VCB = 10 V and f = 1.0 MHz.

  6. What is the current-gain - bandwidth product of the BC847AWT1G transistor?

    The current-gain - bandwidth product is 100 MHz at IC = 10 mA and VCE = 5.0 Vdc.

  7. What package type is the BC847AWT1G transistor housed in?

    The transistor is housed in the SOT-323/SC-70 package.

  8. Is the BC847AWT1G transistor suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

  9. What are the typical base-emitter saturation voltages for the BC847AWT1G transistor?

    The base-emitter saturation voltages range from 0.7 to 0.9 V.

  10. What is the emitter-base breakdown voltage of the BC847AWT1G transistor?

    The emitter-base breakdown voltage is 6.0 V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 2mA, 5V
Power - Max:150 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70-3 (SOT323)
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Similar Products

Part Number BC847AWT1G BC847BWT1G BC847ALT1G BC847AWT1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
Transistor Type NPN NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA, 5V 200 @ 2mA, 5V 110 @ 2mA, 5V 110 @ 2mA, 5V
Power - Max 150 mW 150 mW 300 mW 225 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323) SC-70-3 (SOT323) SOT-23-3 (TO-236) SC-70-3 (SOT323)

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