Overview
The BC847AWT1 is a general-purpose NPN epitaxial silicon transistor manufactured by ON Semiconductor. It is designed for low-power surface mount applications and is housed in the SOT-323 (SC-70) package. This transistor is suitable for a wide range of applications, including switching and amplifier circuits, and is particularly noted for its low noise characteristics and high current gain.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Collector-Emitter Voltage | VCEO | 45 | V |
Collector-Base Voltage | VCBO | 50 | V |
Emitter-Base Voltage | VEBO | 6 | V |
Collector Current (DC) | IC | 100 | mA |
Junction Temperature | TJ | 150 | °C |
Storage Temperature Range | TSTG | -65 to +150 | °C |
Power Dissipation | PD | 310 | mW |
Thermal Resistance, Junction-to-Ambient | RθJA | 403 | °C/W |
DC Current Gain (hFE) | hFE | 110-800 | |
Collector-Emitter Saturation Voltage | VCE(sat) | 0.25-0.6 | V |
Base-Emitter Saturation Voltage | VBE(sat) | 0.7-0.9 | V |
Transition Frequency (ft) | ft | 150 | MHz |
Key Features
- Suitable for switching and amplifier applications.
- Low collector-emitter saturation voltage.
- Closely matched current gain.
- Low noise characteristics.
- Complementary pair with BC857.
- Housed in the SOT-323 (SC-70) package, suitable for surface mount circuits.
- Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
Applications
The BC847AWT1 transistor is ideally suited for a variety of applications, including:
- Switching circuits: Due to its high current gain and low saturation voltage, it is effective in switching applications.
- Amplifier circuits: Suitable for general-purpose amplifier applications, including audio and radio frequency amplifiers.
- Automatic insertion in thick and thin-film circuits: Designed for easy integration into automated manufacturing processes.
- Portable equipment: Its small package size and low power consumption make it suitable for portable devices.
- Small load switch transistors: High gain and low noise make it a good choice for small load switching applications.
Q & A
- What is the maximum collector-emitter voltage of the BC847AWT1 transistor?
The maximum collector-emitter voltage (VCEO) is 45 V. - What is the maximum collector current of the BC847AWT1 transistor?
The maximum collector current (IC) is 100 mA. - What is the junction temperature range for the BC847AWT1 transistor?
The junction temperature (TJ) range is up to 150°C. - What package type is the BC847AWT1 transistor housed in?
The BC847AWT1 is housed in the SOT-323 (SC-70) package. - Is the BC847AWT1 transistor RoHS compliant?
Yes, the BC847AWT1 is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. - What is the typical DC current gain (hFE) of the BC847AWT1 transistor?
The DC current gain (hFE) ranges from 110 to 800. - What are the main applications of the BC847AWT1 transistor?
The main applications include switching circuits, amplifier circuits, and automatic insertion in thick and thin-film circuits. - What is the transition frequency (ft) of the BC847AWT1 transistor?
The transition frequency (ft) is 150 MHz. - Is the BC847AWT1 transistor suitable for low noise applications?
Yes, it is known for its low noise characteristics, making it suitable for low noise applications. - What is the complementary pair of the BC847AWT1 transistor?
The complementary pair of the BC847AWT1 is the BC857.