BC847AWT1
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onsemi BC847AWT1

Manufacturer No:
BC847AWT1
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANSISTOR NPN 45V 100MA SOT-323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847AWT1 is a general-purpose NPN epitaxial silicon transistor manufactured by ON Semiconductor. It is designed for low-power surface mount applications and is housed in the SOT-323 (SC-70) package. This transistor is suitable for a wide range of applications, including switching and amplifier circuits, and is particularly noted for its low noise characteristics and high current gain.

Key Specifications

ParameterSymbolValueUnit
Collector-Emitter VoltageVCEO45V
Collector-Base VoltageVCBO50V
Emitter-Base VoltageVEBO6V
Collector Current (DC)IC100mA
Junction TemperatureTJ150°C
Storage Temperature RangeTSTG-65 to +150°C
Power DissipationPD310mW
Thermal Resistance, Junction-to-AmbientRθJA403°C/W
DC Current Gain (hFE)hFE110-800
Collector-Emitter Saturation VoltageVCE(sat)0.25-0.6V
Base-Emitter Saturation VoltageVBE(sat)0.7-0.9V
Transition Frequency (ft)ft150MHz

Key Features

  • Suitable for switching and amplifier applications.
  • Low collector-emitter saturation voltage.
  • Closely matched current gain.
  • Low noise characteristics.
  • Complementary pair with BC857.
  • Housed in the SOT-323 (SC-70) package, suitable for surface mount circuits.
  • Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

Applications

The BC847AWT1 transistor is ideally suited for a variety of applications, including:

  • Switching circuits: Due to its high current gain and low saturation voltage, it is effective in switching applications.
  • Amplifier circuits: Suitable for general-purpose amplifier applications, including audio and radio frequency amplifiers.
  • Automatic insertion in thick and thin-film circuits: Designed for easy integration into automated manufacturing processes.
  • Portable equipment: Its small package size and low power consumption make it suitable for portable devices.
  • Small load switch transistors: High gain and low noise make it a good choice for small load switching applications.

Q & A

  1. What is the maximum collector-emitter voltage of the BC847AWT1 transistor?
    The maximum collector-emitter voltage (VCEO) is 45 V.
  2. What is the maximum collector current of the BC847AWT1 transistor?
    The maximum collector current (IC) is 100 mA.
  3. What is the junction temperature range for the BC847AWT1 transistor?
    The junction temperature (TJ) range is up to 150°C.
  4. What package type is the BC847AWT1 transistor housed in?
    The BC847AWT1 is housed in the SOT-323 (SC-70) package.
  5. Is the BC847AWT1 transistor RoHS compliant?
    Yes, the BC847AWT1 is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
  6. What is the typical DC current gain (hFE) of the BC847AWT1 transistor?
    The DC current gain (hFE) ranges from 110 to 800.
  7. What are the main applications of the BC847AWT1 transistor?
    The main applications include switching circuits, amplifier circuits, and automatic insertion in thick and thin-film circuits.
  8. What is the transition frequency (ft) of the BC847AWT1 transistor?
    The transition frequency (ft) is 150 MHz.
  9. Is the BC847AWT1 transistor suitable for low noise applications?
    Yes, it is known for its low noise characteristics, making it suitable for low noise applications.
  10. What is the complementary pair of the BC847AWT1 transistor?
    The complementary pair of the BC847AWT1 is the BC857.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:250mV @ 500µA, 10mA
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 2mA, 5V
Power - Max:225 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70-3 (SOT323)
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Similar Products

Part Number BC847AWT1 BC847AWT1G BC847BWT1 BC847ALT1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete
Transistor Type NPN NPN - -
Current - Collector (Ic) (Max) 100 mA 100 mA - -
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V - -
Vce Saturation (Max) @ Ib, Ic 250mV @ 500µA, 10mA 600mV @ 5mA, 100mA - -
Current - Collector Cutoff (Max) - 15nA (ICBO) - -
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA, 5V 110 @ 2mA, 5V - -
Power - Max 225 mW 150 mW - -
Frequency - Transition 100MHz 100MHz - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -
Mounting Type Surface Mount Surface Mount - -
Package / Case SC-70, SOT-323 SC-70, SOT-323 - -
Supplier Device Package SC-70-3 (SOT323) SC-70-3 (SOT323) - -

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