Overview
The BC847BWT1 is a general-purpose NPN silicon transistor produced by onsemi. It is designed for low power surface mount applications and is housed in the SC-70/SOT-323 package. This transistor is suitable for various general-purpose amplifier applications and is known for its reliability and performance in a compact form factor.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 45 | V |
| Collector-Base Voltage | VCBO | 50 | V |
| Emitter-Base Voltage | VEBO | 6.0 | V |
| Collector Current - Continuous | IC | 100 | mAdc |
| DC Current Gain (IC = 10 mA, VCE = 5.0 V) | hFE | 200 | - |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VCE(sat) | 0.25 | V |
| Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VBE(sat) | 0.7 | V |
| Output Capacitance (VCB = 10 V, f = 1.0 MHz) | Cobo | 4.5 | pF |
| Current-Gain - Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) | fT | 100 | MHz |
Key Features
- AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, ensuring environmental compliance.
- Compact SC-70/SOT-323 package designed for low power surface mount applications.
- High DC current gain with values up to 200 for the BC847B variant.
- Low collector-emitter and base-emitter saturation voltages, enhancing efficiency in amplifier circuits.
- Wide operating temperature range from -55°C to +125°C.
Applications
The BC847BWT1 transistor is versatile and can be used in a variety of applications, including:
- General-purpose amplifier circuits.
- Automotive electronics due to its AEC-Q101 qualification.
- Low power surface mount designs where space is limited.
- Switching and linear amplifier applications.
- Consumer electronics and industrial control systems.
Q & A
- What is the collector-emitter voltage rating for the BC847BWT1 transistor?
The collector-emitter voltage rating for the BC847BWT1 transistor is 45 V.
- What is the DC current gain for the BC847B variant?
The DC current gain for the BC847B variant is up to 200.
- What is the operating temperature range for the BC847BWT1 transistor?
The operating temperature range for the BC847BWT1 transistor is from -55°C to +125°C.
- Is the BC847BWT1 transistor RoHS compliant?
Yes, the BC847BWT1 transistor is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
- What is the typical collector-emitter saturation voltage for the BC847BWT1 transistor?
The typical collector-emitter saturation voltage for the BC847BWT1 transistor is 0.25 V.
- What is the current-gain - bandwidth product for the BC847BWT1 transistor?
The current-gain - bandwidth product for the BC847BWT1 transistor is 100 MHz.
- What package type is the BC847BWT1 transistor housed in?
The BC847BWT1 transistor is housed in the SC-70/SOT-323 package.
- Is the BC847BWT1 transistor suitable for automotive applications?
Yes, the BC847BWT1 transistor is AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive applications.
- What is the emitter-base breakdown voltage for the BC847BWT1 transistor?
The emitter-base breakdown voltage for the BC847BWT1 transistor is 6.0 V.
- What is the output capacitance of the BC847BWT1 transistor?
The output capacitance of the BC847BWT1 transistor is 4.5 pF.
