Overview
The BC847CWT1 is a general-purpose NPN silicon transistor produced by onsemi. It is part of the BC847 series, which is designed for a wide range of amplifier and switching applications. This transistor is known for its high current gain, low noise figure, and robust electrical characteristics, making it suitable for various electronic circuits.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | - | - | 45 | V |
| Collector-Emitter Breakdown Voltage (IC = 10 μA, VEB = 0) | V(BR)CES | - | - | 50 | V |
| Collector-Base Breakdown Voltage | V(BR)CBO | - | - | 50 | V |
| Emitter-Base Breakdown Voltage | V(BR)EBO | - | - | 6.0 | V |
| Collector Cutoff Current (VCB = 30 V, TA = 150°C) | ICBO | - | - | 15 nA | A |
| DC Current Gain (IC = 10 mA, VCE = 5.0 V) | hFE | 420 | - | - | - |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VCE(sat) | - | - | 0.25 | V |
| Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VBE(sat) | - | - | 0.7 | V |
| Transition Frequency (fT) | fT | - | - | 300 MHz | MHz |
| Maximum Collector Current | Ic max | - | - | 0.1 A | A |
| Maximum Operating Junction Temperature | Tj | - | - | 150 °C | °C |
Key Features
- High DC Current Gain: The BC847CWT1 offers high DC current gain (hFE) of up to 420, making it suitable for amplifier applications.
- Low Noise Figure: It has a low noise figure, which is beneficial for reducing noise in electronic circuits.
- Robust Breakdown Voltages: High collector-emitter, collector-base, and emitter-base breakdown voltages ensure reliable operation under various conditions.
- High Transition Frequency: A transition frequency (fT) of 300 MHz allows for high-frequency applications.
- Compact Package: The SC-70 (SOT-323) package is compact and suitable for surface-mount technology (SMT) applications.
Applications
- General Purpose Amplifiers: Suitable for a wide range of amplifier applications due to its high current gain and low noise figure.
- Switching Circuits: Can be used in switching circuits where high speed and low saturation voltage are required.
- Audio Amplifiers: Ideal for audio amplifier circuits due to its low noise characteristics.
- Automotive and Industrial Electronics: Robust electrical characteristics make it suitable for use in automotive and industrial electronic systems.
Q & A
- What is the maximum collector-emitter breakdown voltage of the BC847CWT1?
The maximum collector-emitter breakdown voltage is 45 V.
- What is the typical DC current gain (hFE) of the BC847CWT1?
The typical DC current gain (hFE) is 420.
- What is the maximum collector current of the BC847CWT1?
The maximum collector current is 0.1 A.
- What is the transition frequency (fT) of the BC847CWT1?
The transition frequency (fT) is 300 MHz.
- What is the maximum operating junction temperature of the BC847CWT1?
The maximum operating junction temperature is 150 °C.
- What package type is the BC847CWT1 available in?
The BC847CWT1 is available in the SC-70 (SOT-323) package.
- What are some common applications of the BC847CWT1?
Common applications include general-purpose amplifiers, switching circuits, audio amplifiers, and automotive and industrial electronics.
- What is the collector-emitter saturation voltage of the BC847CWT1?
The collector-emitter saturation voltage is typically 0.25 V.
- What is the base-emitter saturation voltage of the BC847CWT1?
The base-emitter saturation voltage is typically 0.7 V.
- Is the BC847CWT1 lead-free?
