BC848BWT1
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onsemi BC848BWT1

Manufacturer No:
BC848BWT1
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 30V 0.1A SC70-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC848BWT1 is a general-purpose NPN silicon transistor manufactured by onsemi. It is designed for low power surface mount applications and is housed in the SC−70/SOT−323 package. This transistor is part of the BC848 series, which is known for its versatility in various amplifier applications. The BC848BWT1 is Pb-free, halogen-free/BFR-free, and RoHS compliant, making it suitable for a wide range of electronic devices. It also meets automotive and other unique site and control change requirements, being AEC−Q101 qualified and PPAP capable.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 30 V
Collector-Base Voltage VCBO 50 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current - Continuous IC 100 mAdc
Collector-Emitter Breakdown Voltage (IC = 10 mA) V(BR)CEO 30 V
Collector-Base Breakdown Voltage (IC = 10 μA) V(BR)CBO 50 V
Emitter-Base Breakdown Voltage (IE = 1.0 μA) V(BR)EBO 5.0 V
DC Current Gain (IC = 10 mA, VCE = 5.0 V) hFE 180 - 290
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VCE(sat) 0.25 - 0.6 V
Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VBE(sat) 0.7 - 0.9 V

Key Features

  • General Purpose Amplifier: Designed for general purpose amplifier applications.
  • Low Power Surface Mount: Housed in the SC−70/SOT−323 package, suitable for low power surface mount applications.
  • Environmental Compliance: Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • Automotive Qualification: AEC−Q101 qualified and PPAP capable, suitable for automotive and other unique site and control change requirements.
  • High DC Current Gain: Offers a high DC current gain (hFE) ranging from 180 to 290 at IC = 10 mA and VCE = 5.0 V.
  • Low Saturation Voltages: Features low collector-emitter and base-emitter saturation voltages.

Applications

  • General Amplifier Circuits: Suitable for various general-purpose amplifier applications.
  • Automotive Electronics: AEC−Q101 qualified, making it suitable for automotive electronics.
  • Consumer Electronics: Used in a wide range of consumer electronic devices due to its RoHS compliance and low power consumption.
  • Industrial Control Systems: Can be used in industrial control systems requiring reliable and efficient amplification.

Q & A

  1. What is the collector-emitter voltage rating of the BC848BWT1 transistor?

    The collector-emitter voltage rating of the BC848BWT1 transistor is 30 V.

  2. What package type is the BC848BWT1 transistor housed in?

    The BC848BWT1 transistor is housed in the SC−70/SOT−323 package.

  3. Is the BC848BWT1 transistor RoHS compliant?

    Yes, the BC848BWT1 transistor is Pb-free, halogen-free/BFR-free, and RoHS compliant.

  4. What is the DC current gain range of the BC848BWT1 transistor?

    The DC current gain (hFE) of the BC848BWT1 transistor ranges from 180 to 290 at IC = 10 mA and VCE = 5.0 V.

  5. What are the typical applications of the BC848BWT1 transistor?

    The BC848BWT1 transistor is typically used in general amplifier circuits, automotive electronics, consumer electronics, and industrial control systems.

  6. What is the collector-emitter saturation voltage of the BC848BWT1 transistor?

    The collector-emitter saturation voltage (VCE(sat)) of the BC848BWT1 transistor is between 0.25 V and 0.6 V.

  7. What is the base-emitter saturation voltage of the BC848BWT1 transistor?

    The base-emitter saturation voltage (VBE(sat)) of the BC848BWT1 transistor is between 0.7 V and 0.9 V.

  8. Is the BC848BWT1 transistor suitable for high-temperature applications?

    The BC848BWT1 transistor can operate within a temperature range of -55°C to +125°C.

  9. What is the emitter-base breakdown voltage of the BC848BWT1 transistor?

    The emitter-base breakdown voltage (V(BR)EBO) of the BC848BWT1 transistor is 5.0 V.

  10. How is the BC848BWT1 transistor packaged for shipping?

    The BC848BWT1 transistor is shipped in tape and reel packaging, with 3,000 units per reel.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:150 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70-3 (SOT323)
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In Stock

$0.02
9,780

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Same Series
BC847CWT1
BC847CWT1
TRANS NPN 45V 0.1A SC70-3
BC848BWT1
BC848BWT1
TRANS NPN 30V 0.1A SC70-3

Similar Products

Part Number BC848BWT1 BC848BWT1G BC848CWT1 BC848AWT1 BC848BLT1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Active Obsolete
Transistor Type NPN NPN - - -
Current - Collector (Ic) (Max) 100 mA 100 mA - - -
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V - - -
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA - - -
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) - - -
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 200 @ 2mA, 5V - - -
Power - Max 150 mW 150 mW - - -
Frequency - Transition 100MHz 100MHz - - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - - -
Mounting Type Surface Mount Surface Mount - - -
Package / Case SC-70, SOT-323 SC-70, SOT-323 - - -
Supplier Device Package SC-70-3 (SOT323) SC-70-3 (SOT323) - - -

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