Overview
The BC848BWT1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by onsemi. This transistor is part of the BC848 series, known for its versatility and reliability in various electronic applications. It is designed to operate within a wide range of temperatures and is suitable for use in both linear and switching circuits.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | - | - | 30 | V |
| Collector-Base Breakdown Voltage | V(BR)CBO | - | - | 50 | V |
| Emitter-Base Breakdown Voltage | V(BR)EBO | - | - | 6.0 | V |
| DC Current Gain (hFE) | hFE | 110 | 200 | 420 | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | V |
| Base-Emitter Saturation Voltage | VBE(sat) | - | - | 0.7 | V |
| Transition Frequency (ft) | ft | - | - | 100 | MHz |
| Output Capacitance (Cobo) | Cobo | - | - | 4.5 | pF |
| Total Device Dissipation | PD | - | - | 380 | mW |
| Junction and Storage Temperature | TJ, Tstg | -55 | - | 150 | °C |
Key Features
- General Purpose NPN Transistor: Suitable for a wide range of applications including linear and switching circuits.
- High DC Current Gain: hFE ranges from 110 to 420, ensuring reliable amplification.
- Low Saturation Voltages: VCE(sat) and VBE(sat) are minimized to reduce power losses.
- High Transition Frequency: ft of 100 MHz supports high-frequency operations.
- Wide Temperature Range: Operates from -55°C to 150°C, making it suitable for various environmental conditions.
- Low Output Capacitance: Cobo of 4.5 pF, which is beneficial for high-frequency applications.
Applications
The BC848BWT1G transistor is versatile and can be used in a variety of applications, including:
- Amplifier Circuits: Due to its high DC current gain, it is suitable for amplifier circuits in audio and radio systems.
- Switching Circuits: Its low saturation voltages make it ideal for switching applications such as power supplies and motor control.
- High-Frequency Circuits: The high transition frequency supports its use in high-frequency amplifiers and oscillators.
- Automotive and Industrial Electronics: Its wide temperature range and reliability make it a good choice for automotive and industrial electronic systems.
Q & A
- What is the collector-emitter breakdown voltage of the BC848BWT1G transistor?
The collector-emitter breakdown voltage (V(BR)CEO) is 30 V. - What is the typical DC current gain (hFE) of the BC848BWT1G transistor?
The typical DC current gain (hFE) ranges from 200 to 420. - What is the transition frequency (ft) of the BC848BWT1G transistor?
The transition frequency (ft) is 100 MHz. - What is the output capacitance (Cobo) of the BC848BWT1G transistor?
The output capacitance (Cobo) is 4.5 pF. - What is the total device dissipation (PD) of the BC848BWT1G transistor?
The total device dissipation (PD) is 380 mW. - What is the junction and storage temperature range of the BC848BWT1G transistor?
The junction and storage temperature range is from -55°C to 150°C. - What are some common applications of the BC848BWT1G transistor?
Common applications include amplifier circuits, switching circuits, high-frequency circuits, and automotive and industrial electronics. - Is the BC848BWT1G transistor suitable for high-frequency operations?
Yes, with a transition frequency of 100 MHz, it is suitable for high-frequency operations. - What is the base-emitter saturation voltage (VBE(sat)) of the BC848BWT1G transistor?
The base-emitter saturation voltage (VBE(sat)) is typically 0.7 V. - Is the BC848BWT1G transistor available in a Pb-Free package?
Yes, the BC848BWT1G is available in a Pb-Free package.
