Overview
The BC847BWT1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by onsemi. It is designed for low-power surface mount applications and is housed in the SC-70/SOT-323 package, which is lead-free. This transistor is suitable for a wide range of amplifier and switching applications due to its robust electrical characteristics and compact packaging.
Key Specifications
Characteristic | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Breakdown Voltage | V(BR)CEO | - | - | 45 | V |
Collector-Emitter Breakdown Voltage (VEB = 0) | V(BR)CES | - | - | 50 | V |
Collector-Base Breakdown Voltage | V(BR)CBO | - | - | 50 | V |
Emitter-Base Breakdown Voltage | V(BR)EBO | - | - | 6.0 | V |
Collector Cutoff Current (VCB = 30 V) | ICBO | - | - | 15 nA | A |
DC Current Gain (hFE) | hFE | 150 | 270 | 420 | - |
Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.6 | V |
Base-Emitter Saturation Voltage | VBE(sat) | - | - | 0.9 | V |
Current-Gain - Bandwidth Product | fT | - | - | 100 MHz | - |
Output Capacitance (VCB = 10 V, f = 1.0 MHz) | Cobo | - | - | 4.5 pF | - |
Key Features
- General Purpose Amplifier: Designed for general-purpose amplifier applications.
- Compact Packaging: Housed in the SC-70/SOT-323 package, which is lead-free and suitable for surface mount technology.
- High Current Gain: Offers a high DC current gain (hFE) ranging from 150 to 420.
- Low Saturation Voltages: Features low collector-emitter and base-emitter saturation voltages, making it efficient for switching applications.
- Wide Operating Temperature Range: Operates over a temperature range of -55°C to +150°C.
- Low Noise Figure: Has a noise figure of 10 dB, making it suitable for low-noise amplifier circuits.
Applications
- Amplifier Circuits: Suitable for use in various amplifier configurations such as common emitter, common collector, and common base amplifiers.
- Switching Circuits: Can be used in switching applications due to its low saturation voltages and high current gain.
- Audio and Video Equipment: Used in audio and video equipment for amplification and switching purposes.
- Automotive Electronics: Can be used in automotive electronics due to its robust electrical characteristics and wide operating temperature range.
- Industrial Control Systems: Suitable for use in industrial control systems requiring reliable and efficient amplification and switching.
Q & A
- What is the package type of the BC847BWT1G transistor?
The BC847BWT1G transistor is housed in the SC-70/SOT-323 package.
- What is the collector-emitter breakdown voltage of the BC847BWT1G transistor?
The collector-emitter breakdown voltage (V(BR)CEO) is 45 V.
- What is the typical DC current gain (hFE) of the BC847BWT1G transistor?
The typical DC current gain (hFE) is 270.
- What is the collector-emitter saturation voltage of the BC847BWT1G transistor?
The collector-emitter saturation voltage (VCE(sat)) is 0.6 V.
- What is the current-gain - bandwidth product of the BC847BWT1G transistor?
The current-gain - bandwidth product (fT) is 100 MHz.
- What is the operating temperature range of the BC847BWT1G transistor?
The operating temperature range is -55°C to +150°C.
- Is the BC847BWT1G transistor lead-free?
Yes, the BC847BWT1G transistor is lead-free.
- What are some common applications of the BC847BWT1G transistor?
Common applications include amplifier circuits, switching circuits, audio and video equipment, automotive electronics, and industrial control systems.
- What is the noise figure of the BC847BWT1G transistor?
The noise figure is 10 dB.
- What is the output capacitance of the BC847BWT1G transistor?
The output capacitance (Cobo) is 4.5 pF.