BC847BWT1G
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onsemi BC847BWT1G

Manufacturer No:
BC847BWT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SC70-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847BWT1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by onsemi. It is designed for low-power surface mount applications and is housed in the SC-70/SOT-323 package, which is lead-free. This transistor is suitable for a wide range of amplifier and switching applications due to its robust electrical characteristics and compact packaging.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Emitter Breakdown Voltage V(BR)CEO - - 45 V
Collector-Emitter Breakdown Voltage (VEB = 0) V(BR)CES - - 50 V
Collector-Base Breakdown Voltage V(BR)CBO - - 50 V
Emitter-Base Breakdown Voltage V(BR)EBO - - 6.0 V
Collector Cutoff Current (VCB = 30 V) ICBO - - 15 nA A
DC Current Gain (hFE) hFE 150 270 420 -
Collector-Emitter Saturation Voltage VCE(sat) - - 0.6 V
Base-Emitter Saturation Voltage VBE(sat) - - 0.9 V
Current-Gain - Bandwidth Product fT - - 100 MHz -
Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo - - 4.5 pF -

Key Features

  • General Purpose Amplifier: Designed for general-purpose amplifier applications.
  • Compact Packaging: Housed in the SC-70/SOT-323 package, which is lead-free and suitable for surface mount technology.
  • High Current Gain: Offers a high DC current gain (hFE) ranging from 150 to 420.
  • Low Saturation Voltages: Features low collector-emitter and base-emitter saturation voltages, making it efficient for switching applications.
  • Wide Operating Temperature Range: Operates over a temperature range of -55°C to +150°C.
  • Low Noise Figure: Has a noise figure of 10 dB, making it suitable for low-noise amplifier circuits.

Applications

  • Amplifier Circuits: Suitable for use in various amplifier configurations such as common emitter, common collector, and common base amplifiers.
  • Switching Circuits: Can be used in switching applications due to its low saturation voltages and high current gain.
  • Audio and Video Equipment: Used in audio and video equipment for amplification and switching purposes.
  • Automotive Electronics: Can be used in automotive electronics due to its robust electrical characteristics and wide operating temperature range.
  • Industrial Control Systems: Suitable for use in industrial control systems requiring reliable and efficient amplification and switching.

Q & A

  1. What is the package type of the BC847BWT1G transistor?

    The BC847BWT1G transistor is housed in the SC-70/SOT-323 package.

  2. What is the collector-emitter breakdown voltage of the BC847BWT1G transistor?

    The collector-emitter breakdown voltage (V(BR)CEO) is 45 V.

  3. What is the typical DC current gain (hFE) of the BC847BWT1G transistor?

    The typical DC current gain (hFE) is 270.

  4. What is the collector-emitter saturation voltage of the BC847BWT1G transistor?

    The collector-emitter saturation voltage (VCE(sat)) is 0.6 V.

  5. What is the current-gain - bandwidth product of the BC847BWT1G transistor?

    The current-gain - bandwidth product (fT) is 100 MHz.

  6. What is the operating temperature range of the BC847BWT1G transistor?

    The operating temperature range is -55°C to +150°C.

  7. Is the BC847BWT1G transistor lead-free?

    Yes, the BC847BWT1G transistor is lead-free.

  8. What are some common applications of the BC847BWT1G transistor?

    Common applications include amplifier circuits, switching circuits, audio and video equipment, automotive electronics, and industrial control systems.

  9. What is the noise figure of the BC847BWT1G transistor?

    The noise figure is 10 dB.

  10. What is the output capacitance of the BC847BWT1G transistor?

    The output capacitance (Cobo) is 4.5 pF.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:150 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70-3 (SOT323)
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Similar Products

Part Number BC847BWT1G BC847CWT1G BC847AWT1G BC847BLT1G BC847BTT1G BC847BWT1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Obsolete
Transistor Type NPN NPN NPN NPN NPN -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V 45 V -
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 420 @ 2mA, 5V 110 @ 2mA, 5V 200 @ 2mA, 5V 200 @ 2mA, 5V -
Power - Max 150 mW 150 mW 150 mW 300 mW 225 mW -
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SC-75, SOT-416 -
Supplier Device Package SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) SOT-23-3 (TO-236) SC-75, SOT-416 -

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