BC847CWT1G
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onsemi BC847CWT1G

Manufacturer No:
BC847CWT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SC70-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847CWT1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by onsemi. This transistor is part of the BC847 series, known for its versatility and reliability in a wide range of electronic applications. The BC847CWT1G is packaged in a compact SOT-323 format, making it suitable for space-constrained designs. It is designed to operate with a maximum collector current of 100 mA and a maximum collector-emitter voltage of 45 V, making it ideal for various low to medium power applications.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Emitter Breakdown Voltage V(BR)CEO - - 45 V
Collector-Emitter Saturation Voltage VCE(sat) - - 0.25 V
Base-Emitter Saturation Voltage VBE(sat) - - 0.7 V
DC Current Gain hFE 180 290 520 -
Collector Cutoff Current ICBO - - 15 nA -
Output Capacitance Cobo - - 4.5 pF -
Current-Gain - Bandwidth Product fT - - 100 MHz -

Key Features

  • Compact Packaging: The BC847CWT1G is packaged in the SOT-323 format, making it ideal for applications where space is limited.
  • High DC Current Gain: With a DC current gain (hFE) ranging from 180 to 520, this transistor offers high amplification capabilities.
  • Low Saturation Voltages: The transistor features low collector-emitter and base-emitter saturation voltages, which reduce power losses in switching applications.
  • High Breakdown Voltages: The device has high collector-emitter, collector-base, and emitter-base breakdown voltages, ensuring robust operation under various conditions.
  • Wide Operating Temperature Range: The BC847CWT1G can operate over a temperature range of -55°C to +125°C, making it suitable for diverse environmental conditions.

Applications

  • General Purpose Amplification: Suitable for use in general-purpose amplifier circuits due to its high DC current gain and low noise figure.
  • Switching Circuits: The low saturation voltages make it ideal for use in switching applications such as power supplies, motor control, and relay drivers.
  • Audio and Signal Processing: Can be used in audio amplifiers and signal processing circuits where high fidelity and low noise are required.
  • Automotive and Industrial Control: Its robust breakdown voltages and wide operating temperature range make it suitable for automotive and industrial control systems.

Q & A

  1. What is the maximum collector current of the BC847CWT1G?

    The maximum collector current of the BC847CWT1G is 100 mA.

  2. What is the maximum collector-emitter voltage of the BC847CWT1G?

    The maximum collector-emitter voltage of the BC847CWT1G is 45 V.

  3. What is the typical DC current gain (hFE) of the BC847CWT1G?

    The typical DC current gain (hFE) of the BC847CWT1G ranges from 180 to 520.

  4. What is the output capacitance of the BC847CWT1G?

    The output capacitance (Cobo) of the BC847CWT1G is 4.5 pF.

  5. What is the current-gain - bandwidth product of the BC847CWT1G?

    The current-gain - bandwidth product (fT) of the BC847CWT1G is 100 MHz.

  6. What is the operating temperature range of the BC847CWT1G?

    The operating temperature range of the BC847CWT1G is -55°C to +125°C.

  7. What type of packaging does the BC847CWT1G use?

    The BC847CWT1G is packaged in the SOT-323 format.

  8. Is the BC847CWT1G suitable for high-power applications?

    No, the BC847CWT1G is more suited for low to medium power applications due to its maximum collector current and voltage ratings.

  9. Can the BC847CWT1G be used in audio amplifiers?

    Yes, the BC847CWT1G can be used in audio amplifiers due to its high DC current gain and low noise figure.

  10. Is the BC847CWT1G suitable for automotive applications?

    Yes, the BC847CWT1G is suitable for automotive applications due to its robust breakdown voltages and wide operating temperature range.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:150 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70-3 (SOT323)
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Similar Products

Part Number BC847CWT1G BC847CWT3G BC848CWT1G BC847BWT1G BC847CLT1G BC847CTT1G BC847CWT1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Obsolete Obsolete
Transistor Type NPN NPN NPN NPN NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 30 V 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) - 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V 420 @ 2mA, 5V 200 @ 2mA, 5V 420 @ 2mA, 5V 420 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 150 mW 150 mW 150 mW 150 mW 300 mW 200 mW 150 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SC-75, SOT-416 SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) SOT-23-3 (TO-236) SC-75, SOT-416 SC-70-3 (SOT323)

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