Overview
The BC847CTT1G is a general-purpose NPN silicon transistor produced by ON Semiconductor. It is designed for low-power surface mount applications and is housed in the SC-75/SOT-416 package. This transistor is suitable for various amplifier applications due to its robust electrical characteristics and compact packaging. The BC847CTT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
Key Specifications
| Parameter | Symbol | Max Unit | Description |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 45 V | Maximum collector-emitter voltage at TA = 25°C |
| Collector-Base Voltage | VCBO | 50 V | Maximum collector-base voltage at TA = 25°C |
| Emitter-Base Voltage | VEBO | 6.0 V | Maximum emitter-base voltage at TA = 25°C |
| Collector Current - Continuous | IC | 100 mA | Maximum continuous collector current at TA = 25°C |
| DC Current Gain (hFE) | hFE | 420 @ 2 mA, 5 V | Minimum DC current gain at specified conditions |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.6 V @ 5 mA, 100 mA | Saturation voltage at specified collector and base currents |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.7 V @ 10 mA, 0.9 V @ 100 mA | Saturation voltage at specified collector and base currents |
| Transition Frequency | fT | 100 MHz | Current-gain bandwidth product at specified conditions |
| Operating Temperature | TJ | -55°C to 150°C | Junction temperature range |
Key Features
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-free packages available, ensuring compliance with RoHS standards.
- Compact SC-75/SOT-416 surface mount package, ideal for low-power applications.
- High DC current gain (hFE) with minimum values of 420 at 2 mA and 5 V.
- Low collector-emitter saturation voltage (VCE(sat)) of 0.6 V at 5 mA and 100 mA.
- High transition frequency (fT) of 100 MHz, suitable for high-frequency applications.
Applications
- General-purpose amplifier applications.
- Automotive electronics due to AEC-Q101 qualification.
- Low-power surface mount applications in various electronic devices.
- High-frequency applications such as RF amplifiers and switching circuits.
Q & A
- What is the maximum collector-emitter voltage of the BC847CTT1G transistor?
The maximum collector-emitter voltage (VCEO) is 45 V at TA = 25°C.
- What is the package type of the BC847CTT1G transistor?
The BC847CTT1G is housed in the SC-75/SOT-416 surface mount package.
- What is the minimum DC current gain (hFE) of the BC847CTT1G transistor?
The minimum DC current gain (hFE) is 420 at 2 mA and 5 V.
- Is the BC847CTT1G transistor RoHS compliant?
- What is the operating temperature range of the BC847CTT1G transistor?
The operating temperature range is -55°C to 150°C (TJ).
- What is the transition frequency (fT) of the BC847CTT1G transistor?
The transition frequency (fT) is 100 MHz.
- Is the BC847CTT1G transistor suitable for automotive applications?
- What is the maximum collector current of the BC847CTT1G transistor?
The maximum continuous collector current (IC) is 100 mA at TA = 25°C.
- What is the collector-emitter saturation voltage (VCE(sat)) of the BC847CTT1G transistor?
The collector-emitter saturation voltage (VCE(sat)) is 0.6 V at 5 mA and 100 mA.
- What is the base-emitter saturation voltage (VBE(sat)) of the BC847CTT1G transistor?
The base-emitter saturation voltage (VBE(sat)) is 0.7 V at 10 mA and 0.9 V at 100 mA.
