Overview
The BC847BTT1 is a general-purpose NPN silicon bipolar junction transistor (BJT) produced by onsemi. It is designed for general-purpose amplifier applications and is housed in the SC-75/SOT-416 package, which is suitable for low power surface mount applications. This transistor is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit | |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | 45 | V |
| Collector-Base Voltage | VCBO | - | - | 50 | V |
| Emitter-Base Voltage | VEBO | - | - | 6.0 | V |
| Collector Current - Continuous | IC | - | - | 100 mA | mAdc |
| DC Current Gain (IC = 10 mA, VCE = 5.0 V) | hFE | 110 | 200 | 420 | - |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VCE(sat) | - | - | 0.25 | V |
| Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VBE(sat) | - | - | 0.7 | V |
| Current-Gain - Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) | fT | - | - | 100 MHz | - |
| Output Capacitance (VCB = 10 V, f = 1.0 MHz) | Cobo | - | - | 4.5 pF | - |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-Free packages are available, ensuring compliance with environmental regulations.
- Housed in the SC-75/SOT-416 package, designed for low power surface mount applications.
- High DC current gain (hFE) with values ranging from 110 to 420, depending on the collector current and base-emitter voltage.
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
- High current-gain - bandwidth product (fT) of 100 MHz.
Applications
- General-purpose amplifier applications.
- Automotive applications due to AEC-Q101 qualification and PPAP capability.
- Low power surface mount applications in various electronic circuits.
- Use in audio amplifiers, switching circuits, and other low to medium voltage applications.
Q & A
- What is the maximum collector-emitter voltage for the BC847BTT1 transistor?
The maximum collector-emitter voltage (VCEO) is 45 V.
- What package type is the BC847BTT1 transistor housed in?
The BC847BTT1 is housed in the SC-75/SOT-416 package.
- Is the BC847BTT1 transistor AEC-Q101 qualified?
- What is the typical DC current gain (hFE) for the BC847BTT1 transistor?
The typical DC current gain (hFE) ranges from 110 to 420, depending on the collector current and base-emitter voltage.
- What is the collector-emitter saturation voltage (VCE(sat)) for the BC847BTT1 transistor?
The collector-emitter saturation voltage (VCE(sat)) is typically 0.25 V.
- What is the current-gain - bandwidth product (fT) for the BC847BTT1 transistor?
The current-gain - bandwidth product (fT) is 100 MHz.
- Is the BC847BTT1 transistor Pb-Free?
- What are the typical applications for the BC847BTT1 transistor?
The BC847BTT1 is used in general-purpose amplifier applications, automotive applications, and low power surface mount applications.
- What is the maximum collector current for the BC847BTT1 transistor?
The maximum collector current (IC) is 100 mA.
- What is the output capacitance (Cobo) for the BC847BTT1 transistor?
The output capacitance (Cobo) is typically 4.5 pF.
