BC847BLT1
  • Share:

onsemi BC847BLT1

Manufacturer No:
BC847BLT1
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 45V 100MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847BLT1 is a general-purpose NPN transistor produced by onsemi. It is part of the BC847 series, which is known for its versatility and reliability in various electronic applications. This transistor is packaged in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, making it suitable for compact and efficient circuit designs.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Emitter Breakdown Voltage (IC = 10 mA) V(BR)CEO 45 V
Collector-Emitter Breakdown Voltage (IC = 10 μA, VEB = 0) V(BR)CES 50 V
Collector-Base Breakdown Voltage (IC = 10 μA) V(BR)CBO 50 V
Emitter-Base Breakdown Voltage (IE = 1.0 μA) V(BR)EBO 6.0 V
Collector Cutoff Current (VCB = 30 V, TA = 150°C) ICBO 15 nA
DC Current Gain (IC = 10 mA, VCE = 5.0 V) hFE 110 200 420
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VCE(sat) 0.25 V
Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VBE(sat) 0.7 V
Current-Gain - Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) fT 100 MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo 4.5 pF

Key Features

  • General Purpose NPN Transistor: Suitable for a wide range of applications requiring a reliable and versatile transistor.
  • Compact Packaging: Available in the SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, ideal for space-constrained designs.
  • High Breakdown Voltages: Collector-Emitter, Collector-Base, and Emitter-Base breakdown voltages ensure robust performance under various operating conditions.
  • Low Saturation Voltages: Low VCE(sat) and VBE(sat) values minimize power losses in switching and amplification applications.
  • High Current Gain: hFE values ranging from 110 to 420, depending on the specific variant, provide high amplification capabilities.
  • Wide Operating Temperature Range: Operates from -55°C to 150°C, making it suitable for diverse environmental conditions.

Applications

  • Amplifier Circuits: Used in audio and signal amplification due to its high current gain and low noise characteristics.
  • Switching Circuits: Suitable for switching applications such as power supplies, motor control, and relay drivers.
  • Automotive Electronics: Employed in various automotive systems due to its robust performance and wide operating temperature range.
  • Consumer Electronics: Found in consumer devices such as audio equipment, home appliances, and other electronic gadgets.
  • Industrial Control Systems: Used in industrial automation and control systems for its reliability and versatility.

Q & A

  1. What is the collector-emitter breakdown voltage of the BC847BLT1 transistor?

    The collector-emitter breakdown voltage (V(BR)CEO) of the BC847BLT1 transistor is up to 45 V.

  2. What is the typical DC current gain (hFE) of the BC847BLT1 transistor?

    The typical DC current gain (hFE) of the BC847BLT1 transistor ranges from 110 to 420, depending on the specific variant.

  3. What is the maximum collector-emitter saturation voltage (VCE(sat)) of the BC847BLT1 transistor?

    The maximum collector-emitter saturation voltage (VCE(sat)) of the BC847BLT1 transistor is 0.25 V.

  4. What is the package type of the BC847BLT1 transistor?

    The BC847BLT1 transistor is packaged in a SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.[

  5. What is the operating temperature range of the BC847BLT1 transistor?

    The BC847BLT1 transistor operates from -55°C to 150°C.[

  6. What are some common applications of the BC847BLT1 transistor?

    The BC847BLT1 transistor is commonly used in amplifier circuits, switching circuits, automotive electronics, consumer electronics, and industrial control systems.[

  7. What is the emitter-base breakdown voltage (V(BR)EBO) of the BC847BLT1 transistor?

    The emitter-base breakdown voltage (V(BR)EBO) of the BC847BLT1 transistor is up to 6.0 V.[

  8. What is the current-gain bandwidth product (fT) of the BC847BLT1 transistor?

    The current-gain bandwidth product (fT) of the BC847BLT1 transistor is up to 100 MHz.[

  9. What is the output capacitance (Cobo) of the BC847BLT1 transistor?

    The output capacitance (Cobo) of the BC847BLT1 transistor is up to 4.5 pF.[

  10. Is the BC847BLT1 transistor RoHS compliant?

    Yes, the BC847BLT1 transistor is RoHS compliant.[

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

$0.04
5,217

Please send RFQ , we will respond immediately.

Same Series
DD15S20WT2S/AA
DD15S20WT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S200V5S/AA
DD15S200V5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44M32S50V50
DD44M32S50V50
CONN D-SUB HD PLUG 44P VERT SLDR
DD15S20WV5S
DD15S20WV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S0TS/AA
DD44S32S0TS/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S200V3X
DD26S200V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20
DD26S2S50T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60T0
DD44S32S60T0
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BC847BLT1 BC847BLT1G BC847BTT1 BC847CLT1 BC847BLT3 BC847BWT1 BC847ALT1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN NPN NPN - NPN - -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA - 100 mA - -
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V - 45 V - -
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA - 600mV @ 5mA, 100mA - -
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) - 15nA (ICBO) - -
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 200 @ 2mA, 5V 200 @ 2mA, 5V - 200 @ 2mA, 5V - -
Power - Max 300 mW 300 mW 225 mW - 300 mW - -
Frequency - Transition 100MHz 100MHz 100MHz - 100MHz - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) - -
Mounting Type Surface Mount Surface Mount Surface Mount - Surface Mount - -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-75, SOT-416 - TO-236-3, SC-59, SOT-23-3 - -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SC-75, SOT-416 - SOT-23-3 (TO-236) - -

Related Product By Categories

TIP35CW
TIP35CW
STMicroelectronics
TRANS NPN 100V 25A TO247-3
BC817-25W_R1_00001
BC817-25W_R1_00001
Panjit International Inc.
TRANS NPN 45V 0.5A SOT323
PDTC114TT,215
PDTC114TT,215
NXP Semiconductors
NEXPERIA PDTC114TT - SMALL SIGNA
BC857C_R1_00001
BC857C_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
BC817K-25HVL
BC817K-25HVL
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB
TIP147G
TIP147G
onsemi
TRANS PNP DARL 100V 10A TO247-3
BC856BWE6327BTSA1
BC856BWE6327BTSA1
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
BC857BW/ZLX
BC857BW/ZLX
Nexperia USA Inc.
TRANS SOT323
BC847CW/DG/B2,115
BC847CW/DG/B2,115
Nexperia USA Inc.
TRANS NPN 45V 0.1A SOT323
PBSS5350Z/ZLF
PBSS5350Z/ZLF
Nexperia USA Inc.
TRANS PNP 50V 3A SOT223
BCP56-10-QX
BCP56-10-QX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BUK9Y11-30B/C1,115
BUK9Y11-30B/C1,115
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
2SA2222SG
2SA2222SG
onsemi
TRANS PNP 50V 10A TO220ML
MMBT2484LT3G
MMBT2484LT3G
onsemi
TRANS NPN 60V 0.1A SOT23-3
NVD5117PLT4G-VF01
NVD5117PLT4G-VF01
onsemi
MOSFET P-CH 60V 11A/61A DPAK
FDWS9508L_F085
FDWS9508L_F085
onsemi
MOSFET P-CH 40V 80A 8PQFN
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
LB1936V-TLM-E
LB1936V-TLM-E
onsemi
IC MTR DRV BIPLR 2.5-9.5V 16SSOP
NCV7707DQCR2G
NCV7707DQCR2G
onsemi
IC DOOR MODULE DRIVER 36SSOP
UC2842BD
UC2842BD
onsemi
IC REG CTRLR PWM CM 14-SOIC
NCP160AMX330TBG
NCP160AMX330TBG
onsemi
IC REG LINEAR 3.3V 250MA 4XDFN
NCV551SN50T1G
NCV551SN50T1G
onsemi
IC REG LINEAR 5V 150MA 5TSOP