Overview
The BUK9Y11-30B/C1,115 is an N-channel enhancement mode power Field-Effect Transistor (FET) produced by Nexperia, a company that was formerly part of NXP USA Inc. This device is part of the High-Performance Automotive (HPA) TrenchMOS family, designed to meet the stringent requirements of automotive and industrial applications. The BUK9Y11-30B/C1,115 is housed in a plastic LFPAK56 package, which offers a compact footprint while maintaining high power dissipation capabilities.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| V(BR)DSS - Drain-Source Breakdown Voltage | ID = 0.25 mA; VGS = 0 V; Tj = 25 °C | 30 | - | - | V |
| VGS(th) - Gate-Source Threshold Voltage | ID = 1 mA; VDS = VGS; Tj = 25 °C | 1.1 | 1.5 | 2 | V |
| IDSS - Drain Leakage Current | VDS = 30 V; VGS = 0 V; Tj = 25 °C | - | - | 100 nA | A |
| RDSon - Drain-Source On-State Resistance | VGS = 10 V; ID = 25 A; Tj = 25 °C | - | - | 3.5 mΩ | mΩ |
| QG - Gate Charge | VGS = 10 V; ID = 25 A; Tj = 25 °C | - | - | 16.5 nC | nC |
| Tj - Junction Temperature | - | -55 °C | - | 175 °C | °C |
Key Features
- High-Performance Automotive TrenchMOS Technology: Ensures high efficiency and reliability in automotive and industrial applications.
- Logic Level Gate Drive: Allows for easy interface with microcontrollers and other logic circuits.
- Compact LFPAK56 Package: Offers a small footprint while maintaining high power dissipation capabilities.
- Low On-State Resistance (RDSon): Minimizes power losses and heat generation.
- High Junction Temperature Range: Operates reliably from -55 °C to 175 °C.
- AEC-Q101 Qualified: Meets the stringent automotive quality standards.
Applications
- Power Management: Suitable for power supply systems, DC-DC converters, and voltage regulators.
- Motor Drive: Used in motor control circuits for automotive and industrial motors.
- LED Lighting: Ideal for LED driver applications due to its high efficiency and low RDSon.
- Load Switches and Relay Replacements: Can be used to replace relays and other switching devices.
- Backlight Units: Used in display backlighting systems.
Q & A
- What is the BUK9Y11-30B/C1,115?
The BUK9Y11-30B/C1,115 is an N-channel enhancement mode power Field-Effect Transistor (FET) designed for high-performance automotive and industrial applications.
- What package does the BUK9Y11-30B/C1,115 use?
The device is housed in a plastic LFPAK56 package.
- What is the maximum drain-source breakdown voltage (V(BR)DSS) of the BUK9Y11-30B/C1,115?
The maximum drain-source breakdown voltage is 30 V.
- What is the gate-source threshold voltage (VGS(th)) range for the BUK9Y11-30B/C1,115?
The gate-source threshold voltage range is from 1.1 V to 2 V at Tj = 25 °C.
- What is the typical on-state resistance (RDSon) of the BUK9Y11-30B/C1,115?
The typical on-state resistance is 3.5 mΩ at VGS = 10 V and ID = 25 A.
- What is the operating junction temperature range for the BUK9Y11-30B/C1,115?
The device operates from -55 °C to 175 °C.
- Is the BUK9Y11-30B/C1,115 AEC-Q101 qualified?
Yes, the device is qualified to the AEC-Q101 automotive standard.
- What are some common applications for the BUK9Y11-30B/C1,115?
Common applications include power management, motor drive, LED lighting, load switches, and relay replacements.
- What is the maximum continuous drain current (ID) for the BUK9Y11-30B/C1,115?
The maximum continuous drain current is 25 A at Tc = 25 °C.
- What is the gate charge (QG) for the BUK9Y11-30B/C1,115?
The gate charge is typically 16.5 nC at VGS = 10 V and ID = 25 A.
