PBSS5350D,135
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Nexperia USA Inc. PBSS5350D,135

Manufacturer No:
PBSS5350D,135
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 50V 3A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBSS5350D,135 is a high-performance PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed for a variety of applications requiring low voltage drop and high current handling. It features a low collector-emitter saturation voltage (Vce(sat)) and high DC current gain, making it suitable for power management and peripheral driver roles.

Key Specifications

ParameterValueUnit
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 200mA, 2AmV
Transistor TypePNP-
Power - Max750mW
PackageSOT89 (TO-252AA)-
Operating Temperature150°C (TJ)
Frequency - Transition100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 2A, 2V-
Current - Collector Cutoff (Max)100nA (ICBO)nA
Current - Collector (Ic) (Max)3A

Key Features

  • Low collector-emitter saturation voltage (Vce(sat)) of 300mV @ 200mA, 2A.
  • High DC current gain (hFE) of 100 @ 2A, 2V.
  • Maximum collector current of 3A.
  • Maximum power dissipation of 750mW.
  • High transition frequency of 100MHz.
  • Surface mount package (SOT89/TO-252AA) for easy integration.

Applications

  • Power management: DC/DC converters, supply line switching, battery chargers.
  • Peripheral drivers: LCD backlighting, low supply voltage drivers.
  • General-purpose switching and amplification in various electronic circuits.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the PBSS5350D,135 transistor?
    The maximum collector-emitter breakdown voltage is 50V.
  2. What is the typical Vce(sat) for this transistor?
    The typical Vce(sat) is 300mV @ 200mA, 2A.
  3. What is the maximum collector current (Ic) of the PBSS5350D,135?
    The maximum collector current is 3A.
  4. What is the maximum power dissipation of this transistor?
    The maximum power dissipation is 750mW.
  5. What is the transition frequency of the PBSS5350D,135?
    The transition frequency is 100MHz.
  6. What type of package does the PBSS5350D,135 come in?
    The transistor comes in a SOT89 (TO-252AA) surface mount package.
  7. What are some common applications for the PBSS5350D,135 transistor?
    Common applications include power management (DC/DC converters, supply line switching, battery chargers), peripheral drivers (LCD backlighting), and general-purpose switching and amplification.
  8. What is the operating temperature range for this transistor?
    The operating temperature range is up to 150°C (TJ).
  9. What is the DC current gain (hFE) of the PBSS5350D,135?
    The DC current gain (hFE) is 100 @ 2A, 2V.
  10. Is the PBSS5350D,135 suitable for high-frequency applications?
    Yes, with a transition frequency of 100MHz, it is suitable for high-frequency applications.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):50 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 200mA, 2A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 2A, 2V
Power - Max:750 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-74, SOT-457
Supplier Device Package:6-TSOP
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Similar Products

Part Number PBSS5350D,135 PBSS5350X,135 PBSS5350Z,135 PBSS4350D,135 PBSS5350D,115 PBSS5350D,125
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active
Transistor Type PNP PNP PNP NPN PNP PNP
Current - Collector (Ic) (Max) 3 A 3 A 3 A 3 A 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 200mA, 2A 390mV @ 300mA, 3A 300mV @ 200mA, 2A 290mV @ 200mA, 2A 300mV @ 200mA, 2A 300mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A, 2V 200 @ 1A, 2V 100 @ 2A, 2V 100 @ 2A, 2V 100 @ 2A, 2V 100 @ 2A, 2V
Power - Max 750 mW 1.6 W 2 W 750 mW 750 mW 750 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-74, SOT-457 TO-243AA TO-261-4, TO-261AA SC-74, SOT-457 SC-74, SOT-457 SC-74, SOT-457
Supplier Device Package 6-TSOP SOT-89 SOT-223 6-TSOP 6-TSOP 6-TSOP

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