MMBT2222A_D87Z
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onsemi MMBT2222A_D87Z

Manufacturer No:
MMBT2222A_D87Z
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The MMBT2222A_D87Z is an NPN general-purpose amplifier transistor produced by onsemi. This device is designed for use as a medium power amplifier and switch, capable of handling collector currents up to 500 mA. It is sourced from Process 19 and is packaged in a SOT-23-3 case outline.

Key Specifications

ParameterValueUnit
VCEO (Collector-Emitter Voltage)40V
VCBO (Collector-Base Voltage)75V
VEBO (Emitter-Base Voltage)6.0V
IC (Collector Current)1.0A
TSTG (Operating and Storage Junction Temperature Range)-55 to 150°C
PD (Total Device Dissipation)350mW
RθJA (Thermal Resistance, Junction to Ambient)357°C/W
VCE(sat) (Collector-Emitter Saturation Voltage)0.35V
VBE(sat) (Base-Emitter Saturation Voltage)2V
hFE (Current Gain)100 - 300

Key Features

  • Medium power amplifier and switch capabilities.
  • Collector currents up to 500 mA.
  • Sourced from Process 19.
  • Packaged in SOT-23-3 case outline.
  • Low VCE(sat) of 0.35 V.
  • Wide operating temperature range from -55°C to 150°C.

Applications

The MMBT2222A_D87Z is suitable for a wide range of general-purpose applications, including medium power amplification and switching roles. It is versatile and can be used in various electronic circuits where a reliable NPN transistor is required.

Q & A

  1. What is the maximum collector current of the MMBT2222A_D87Z? The maximum collector current is up to 500 mA.
  2. What is the package type of the MMBT2222A_D87Z? The device is packaged in a SOT-23-3 case outline.
  3. What is the maximum collector-emitter voltage (VCEO) of the MMBT2222A_D87Z? The maximum collector-emitter voltage is 40 V.
  4. What is the operating temperature range of the MMBT2222A_D87Z? The operating and storage junction temperature range is from -55°C to 150°C.
  5. What is the total device dissipation (PD) of the MMBT2222A_D87Z? The total device dissipation is 350 mW.
  6. What is the thermal resistance (RθJA) of the MMBT2222A_D87Z? The thermal resistance is 357 °C/W.
  7. Is the MMBT2222A_D87Z still in production? No, the MMBT2222A_D87Z is obsolete and not in production.
  8. What is the base-emitter saturation voltage (VBE(sat)) of the MMBT2222A_D87Z? The base-emitter saturation voltage is 2 V.
  9. What is the current gain (hFE) range of the MMBT2222A_D87Z? The current gain range is from 100 to 300.
  10. Where can I find more detailed specifications for the MMBT2222A_D87Z? Detailed specifications can be found in the datasheet available from onsemi's official website or other electronic component distributors like Digi-Key and Mouser.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:350 mW
Frequency - Transition:300MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
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