Overview
The SBC856ALT1G is a PNP general-purpose bipolar transistor manufactured by onsemi. This device is part of the BC856 series and is designed for a wide range of applications, including automotive and other sectors requiring high reliability and compliance with specific standards. The SBC856ALT1G is AEC-Q101 qualified and PPAP capable, ensuring it meets stringent automotive requirements. It is also Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -65 | V |
| Collector-Base Voltage | VCBO | -80 | V |
| Emitter-Base Voltage | VEBO | -5.0 | V |
| Collector Current - Continuous | IC | -100 | mAdc |
| Collector Current - Peak | IC | -200 | mAdc |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 | mW |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | 556 | °C/W |
| DC Current Gain (IC = -10 mA, VCE = -5.0 V) | hFE | 125-220 | |
| Collector-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) | VCE(sat) | -0.3 | V |
| Base-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) | VBE(sat) | -0.7 | V |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
- Pb-free, halogen-free, and RoHS compliant.
- High DC current gain (hFE) ranging from 125 to 220.
- Low collector-emitter saturation voltage (VCE(sat)) of -0.3 V.
- Low base-emitter saturation voltage (VBE(sat)) of -0.7 V.
- High collector-base breakdown voltage (VCBO) of -80 V.
- Small signal current-gain bandwidth product (fT) of 100 MHz.
Applications
The SBC856ALT1G transistor is versatile and can be used in a variety of applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
- General-purpose switching and amplification: Its high current gain and low saturation voltages make it ideal for switching and amplification circuits.
- Consumer electronics: It can be used in various consumer electronic devices requiring reliable and efficient transistor performance.
- Industrial control systems: Its robust specifications make it suitable for industrial control and automation systems.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the SBC856ALT1G transistor?
The maximum collector-emitter voltage (VCEO) is -65 V. - Is the SBC856ALT1G transistor RoHS compliant?
Yes, the SBC856ALT1G is Pb-free, halogen-free, and RoHS compliant. - What is the DC current gain (hFE) of the SBC856ALT1G transistor?
The DC current gain (hFE) ranges from 125 to 220. - What is the collector-emitter saturation voltage (VCE(sat)) of the SBC856ALT1G transistor?
The collector-emitter saturation voltage (VCE(sat)) is -0.3 V. - What is the thermal resistance, junction-to-ambient (RJA), of the SBC856ALT1G transistor on an FR-5 board?
The thermal resistance, junction-to-ambient (RJA), is 556 °C/W. - What is the maximum junction and storage temperature for the SBC856ALT1G transistor?
The maximum junction and storage temperature is -55 to +150 °C. - Is the SBC856ALT1G transistor suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications. - What is the small signal current-gain bandwidth product (fT) of the SBC856ALT1G transistor?
The small signal current-gain bandwidth product (fT) is 100 MHz. - What is the package type of the SBC856ALT1G transistor?
The package type is SOT-23 (TO-236). - What is the maximum collector current of the SBC856ALT1G transistor?
The maximum continuous collector current is -100 mA, and the peak collector current is -200 mA.
