Overview
The SBC857BLT1G is a general-purpose PNP silicon transistor manufactured by onsemi. This transistor is designed for low-power surface mount applications and is housed in the SOT-23 (SC-59) package. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. The device is Pb-free, halogen-free, and RoHS compliant.
Key Specifications
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | -45 | V |
| Collector-Base Voltage | VCBO | - | - | -50 | V |
| Emitter-Base Voltage | VEBO | - | - | -5.0 | V |
| Collector Current - Continuous | IC | - | - | -100 | mA |
| Collector Current - Peak | IC | - | - | -200 | mA |
| DC Current Gain (hFE) | hFE | 220 | - | 420 | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | -0.3 | V |
| Base-Emitter Saturation Voltage | VBE(sat) | - | - | -0.7 | V |
| Current-Gain Bandwidth Product | fT | - | - | 100 | MHz |
| Output Capacitance | Cob | - | - | 4.5 | pF |
Key Features
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free, and RoHS compliant.
- General-purpose PNP silicon transistor.
- Housed in the SOT-23 (SC-59) package, designed for low-power surface mount applications.
- High DC current gain (hFE) ranging from 220 to 420.
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
- High current-gain bandwidth product (fT) of 100 MHz.
Applications
- General-purpose amplifier applications.
- Automotive electronics.
- Consumer electronics.
- Industrial control systems.
- Low-power surface mount applications.
Q & A
- What is the collector-emitter voltage rating of the SBC857BLT1G transistor?
The collector-emitter voltage (VCEO) rating is -45 V.
- What is the package type of the SBC857BLT1G transistor?
The transistor is housed in the SOT-23 (SC-59) package.
- Is the SBC857BLT1G transistor AEC-Q101 qualified?
- What is the DC current gain (hFE) range of the SBC857BLT1G transistor?
The DC current gain (hFE) ranges from 220 to 420.
- What is the collector-emitter saturation voltage (VCE(sat)) of the SBC857BLT1G transistor?
The collector-emitter saturation voltage (VCE(sat)) is -0.3 V.
- What is the current-gain bandwidth product (fT) of the SBC857BLT1G transistor?
The current-gain bandwidth product (fT) is 100 MHz.
- Is the SBC857BLT1G transistor Pb-free and RoHS compliant?
- What are the typical applications of the SBC857BLT1G transistor?
The transistor is used in general-purpose amplifier applications, automotive electronics, consumer electronics, and industrial control systems.
- What is the emitter-base voltage rating of the SBC857BLT1G transistor?
The emitter-base voltage (VEBO) rating is -5.0 V.
- What is the collector current rating of the SBC857BLT1G transistor?
The continuous collector current (IC) rating is -100 mA, and the peak collector current rating is -200 mA.
