BC856ALT1G
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onsemi BC856ALT1G

Manufacturer No:
BC856ALT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 65V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856ALT1G is a general-purpose PNP bipolar junction transistor (BJT) manufactured by onsemi. This transistor is part of the BC856ALT1G series, which is designed for a wide range of applications, including automotive and other sectors requiring high reliability and compliance with stringent standards. The device is AEC-Q101 qualified and PPAP capable, ensuring it meets the rigorous demands of automotive and industrial environments. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant, making it suitable for use in environmentally conscious designs.

Key Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)-65V
Collector-Base Voltage (VCBO)-80V
Emitter-Base Voltage (VEBO)-5.0V
Collector Current - Continuous (IC)-100 mAmA
Power Dissipation (Pd)300 mWmW
Current-Gain Bandwidth Product (ft)100 MHzMHz
Output Capacitance (Cob)4.5 pFpF
Junction and Storage Temperature (TJ, Tstg)-55 to +150°C
Package TypeSOT-23-3 (TO-236)

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • High collector-emitter voltage (VCEO) of -65 V.
  • High collector-base voltage (VCBO) of -80 V.
  • Low noise figure.
  • High current-gain bandwidth product (ft) of 100 MHz.
  • Compact SOT-23-3 (TO-236) surface mount package.

Applications

The BC856ALT1G transistor is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
  • General-purpose amplification: Its high current-gain bandwidth product makes it suitable for amplifier circuits.
  • Switching circuits: The transistor's switching characteristics make it appropriate for use in switching applications.
  • Industrial control systems: Its robust specifications and compliance with environmental standards make it a good choice for industrial control systems.

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BC856ALT1G transistor?
    The collector-emitter voltage (VCEO) of the BC856ALT1G transistor is -65 V.
  2. Is the BC856ALT1G transistor RoHS compliant?
    Yes, the BC856ALT1G transistor is RoHS compliant, Pb-free, and halogen-free/BFR-free.
  3. What is the current-gain bandwidth product (ft) of the BC856ALT1G transistor?
    The current-gain bandwidth product (ft) of the BC856ALT1G transistor is 100 MHz.
  4. What is the package type of the BC856ALT1G transistor?
    The BC856ALT1G transistor comes in a SOT-23-3 (TO-236) surface mount package.
  5. Is the BC856ALT1G transistor suitable for automotive applications?
    Yes, the BC856ALT1G transistor is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
  6. What is the maximum collector current of the BC856ALT1G transistor?
    The maximum collector current of the BC856ALT1G transistor is -100 mA.
  7. What is the power dissipation (Pd) of the BC856ALT1G transistor?
    The power dissipation (Pd) of the BC856ALT1G transistor is 300 mW.
  8. What is the junction and storage temperature range of the BC856ALT1G transistor?
    The junction and storage temperature range of the BC856ALT1G transistor is -55 to +150°C.
  9. What is the output capacitance (Cob) of the BC856ALT1G transistor?
    The output capacitance (Cob) of the BC856ALT1G transistor is 4.5 pF.
  10. Is the BC856ALT1G transistor available from major distributors?
    Yes, the BC856ALT1G transistor is available from major distributors such as Digi-Key, Mouser, and TME.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:125 @ 2mA, 5V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number BC856ALT1G BC856BLT1G BC856ALT3G BC856ALT1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Obsolete
Transistor Type PNP PNP PNP -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) 65 V 65 V 65 V -
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA, 5V 220 @ 2mA, 5V 125 @ 2mA, 5V -
Power - Max 300 mW 300 mW 300 mW -
Frequency - Transition 100MHz 100MHz 100MHz -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

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