BC859BLT3G
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onsemi BC859BLT3G

Manufacturer No:
BC859BLT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 30V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC859BLT3G is a PNP bipolar junction transistor (BJT) manufactured by onsemi. It is designed for general-purpose amplifier applications and is housed in the SOT-23 (TO-236) package. This transistor is part of the BC859 series, which is known for its reliability and performance in low-power surface mount applications.

Key Specifications

CharacteristicValueUnit
Transistor PolarityPNP
ConfigurationSingle
Maximum DC Collector Current100mA
Collector-Emitter Voltage (VCEO) Max45V
Collector-Emitter Breakdown Voltage (V(BR)CEO)30V
Collector Cutoff Current (ICBO)−15 nA (VCB = −30 V)
Base-Emitter On Voltage (VBE(on))−0.7 to −0.9 V
Vce Saturation (Max) @ Ib, Ic650 mV @ 5 mA, 100 mA
Current-Gain Bandwidth Product (fT)100 MHz
Output Capacitance (Cob)4.5 pF (VCB = −10 V, f = 1.0 MHz)

Key Features

  • Low-power surface mount design in SOT-23 (TO-236) package.
  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • High collector-emitter breakdown voltage (V(BR)CEO) of up to 45 V.
  • Low collector-emitter saturation voltage (Vce(sat)) of 650 mV at 5 mA and 100 mA.
  • High current-gain bandwidth product (fT) of 100 MHz.
  • Low noise figure, suitable for sensitive amplifier applications.

Applications

The BC859BLT3G is versatile and can be used in a variety of applications, including:

  • General-purpose amplifier circuits.
  • Automotive electronics due to its AEC-Q101 qualification.
  • Low-power switching and amplification in consumer electronics.
  • Audio and signal processing circuits where low noise and high gain are required.

Q & A

  1. What is the transistor polarity of the BC859BLT3G?
    The BC859BLT3G is a PNP bipolar junction transistor.
  2. What is the maximum DC collector current of the BC859BLT3G?
    The maximum DC collector current is 100 mA.
  3. What is the collector-emitter breakdown voltage (V(BR)CEO) of the BC859BLT3G?
    The collector-emitter breakdown voltage is up to 30 V.
  4. What package type is the BC859BLT3G housed in?
    The BC859BLT3G is housed in the SOT-23 (TO-236) package.
  5. Is the BC859BLT3G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  6. What is the current-gain bandwidth product (fT) of the BC859BLT3G?
    The current-gain bandwidth product is 100 MHz.
  7. What is the output capacitance (Cob) of the BC859BLT3G?
    The output capacitance is 4.5 pF at VCB = −10 V and f = 1.0 MHz.
  8. What is the base-emitter on voltage (VBE(on)) range of the BC859BLT3G?
    The base-emitter on voltage range is −0.7 to −0.9 V.
  9. What is the Vce saturation voltage of the BC859BLT3G?
    The Vce saturation voltage is 650 mV at 5 mA and 100 mA.
  10. Is the BC859BLT3G Pb-free?
    Yes, the BC859BLT3G is a Pb-free package.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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In Stock

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Similar Products

Part Number BC859BLT3G BC858BLT3G BC859BLT1G BC859BLT3
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Active
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 220 @ 2mA, 5V 220 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 300 mW 300 mW 300 mW 300 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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