Overview
The BC857B is a PNP silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is part of the BC857 series, known for its high current gain, low collector-emitter saturation voltage, and low noise characteristics. This transistor is designed for general-purpose applications, particularly in audio frequency (AF) input stages and driver circuits. The BC857B is available in a Pb-free (RoHS compliant) package and is qualified according to AEC Q101 standards, ensuring reliability and durability in various electronic systems.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector Emitter Breakdown Voltage (Vceo) | 45 | V |
| Max Collector Current (Ic) | 100 | mA |
| Transition Frequency (fT) | 250 | MHz |
| Collector Emitter Saturation Voltage (Vce(sat)) @ Ib, Ic | 650 mV @ 5mA, 100mA | mV |
| Max Power Dissipation (Pd) | 330 | mW |
| Package | TO-236-3, SC-59, SOT-23-3 | |
| RoHS Status | ROHS3 Compliant |
Key Features
- High Current Gain: The BC857B offers high current gain, making it suitable for amplification and switching applications.
- Low Collector-Emitter Saturation Voltage: This feature ensures efficient operation in saturation mode, reducing power consumption and heat generation.
- Low Noise: The transistor exhibits low noise characteristics between 30 Hz and 15 kHz, which is beneficial for audio frequency applications.
- Complementary Types: The BC857B has complementary NPN types (BC847-BC850), allowing for balanced circuit designs.
- Pb-free (RoHS Compliant) Package: The transistor is packaged in a lead-free, RoHS compliant package, making it environmentally friendly.
- AEC Q101 Qualified: Qualified according to AEC Q101 standards, ensuring reliability and durability in automotive and other demanding applications.
Applications
- AF Input Stages and Driver Applications: The BC857B is particularly suited for audio frequency input stages and driver circuits due to its low noise and high current gain characteristics.
- General-Purpose Amplification and Switching: Its high current gain and low saturation voltage make it a versatile component for various general-purpose amplification and switching applications.
Q & A
- What is the collector-emitter breakdown voltage of the BC857B?
The collector-emitter breakdown voltage (Vceo) of the BC857B is 45 V.
- What is the maximum collector current of the BC857B?
The maximum collector current (Ic) of the BC857B is 100 mA.
- What is the transition frequency of the BC857B?
The transition frequency (fT) of the BC857B is 250 MHz.
- What is the collector-emitter saturation voltage of the BC857B?
The collector-emitter saturation voltage (Vce(sat)) of the BC857B is 650 mV at 5 mA and 100 mA.
- Is the BC857B RoHS compliant?
Yes, the BC857B is RoHS3 compliant, meaning it is lead-free and environmentally friendly.
- What are the typical applications of the BC857B?
The BC857B is typically used in AF input stages and driver applications due to its low noise and high current gain characteristics.
- Does the BC857B have complementary NPN types?
Yes, the BC857B has complementary NPN types, specifically the BC847-BC850 series.
- What is the package type of the BC857B?
The BC857B is available in TO-236-3, SC-59, and SOT-23-3 packages.
- Is the BC857B qualified according to any automotive standards?
Yes, the BC857B is qualified according to AEC Q101 standards, ensuring its reliability and durability in automotive and other demanding applications.
- What is the maximum power dissipation of the BC857B?
The maximum power dissipation (Pd) of the BC857B is 330 mW.
