BC857B
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Infineon Technologies BC857B

Manufacturer No:
BC857B
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP 45V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857B is a PNP silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is part of the BC857 series, known for its high current gain, low collector-emitter saturation voltage, and low noise characteristics. This transistor is designed for general-purpose applications, particularly in audio frequency (AF) input stages and driver circuits. The BC857B is available in a Pb-free (RoHS compliant) package and is qualified according to AEC Q101 standards, ensuring reliability and durability in various electronic systems.

Key Specifications

Parameter Value Unit
Collector Emitter Breakdown Voltage (Vceo) 45 V
Max Collector Current (Ic) 100 mA
Transition Frequency (fT) 250 MHz
Collector Emitter Saturation Voltage (Vce(sat)) @ Ib, Ic 650 mV @ 5mA, 100mA mV
Max Power Dissipation (Pd) 330 mW
Package TO-236-3, SC-59, SOT-23-3
RoHS Status ROHS3 Compliant

Key Features

  • High Current Gain: The BC857B offers high current gain, making it suitable for amplification and switching applications.
  • Low Collector-Emitter Saturation Voltage: This feature ensures efficient operation in saturation mode, reducing power consumption and heat generation.
  • Low Noise: The transistor exhibits low noise characteristics between 30 Hz and 15 kHz, which is beneficial for audio frequency applications.
  • Complementary Types: The BC857B has complementary NPN types (BC847-BC850), allowing for balanced circuit designs.
  • Pb-free (RoHS Compliant) Package: The transistor is packaged in a lead-free, RoHS compliant package, making it environmentally friendly.
  • AEC Q101 Qualified: Qualified according to AEC Q101 standards, ensuring reliability and durability in automotive and other demanding applications.

Applications

  • AF Input Stages and Driver Applications: The BC857B is particularly suited for audio frequency input stages and driver circuits due to its low noise and high current gain characteristics.
  • General-Purpose Amplification and Switching: Its high current gain and low saturation voltage make it a versatile component for various general-purpose amplification and switching applications.

Q & A

  1. What is the collector-emitter breakdown voltage of the BC857B?

    The collector-emitter breakdown voltage (Vceo) of the BC857B is 45 V.

  2. What is the maximum collector current of the BC857B?

    The maximum collector current (Ic) of the BC857B is 100 mA.

  3. What is the transition frequency of the BC857B?

    The transition frequency (fT) of the BC857B is 250 MHz.

  4. What is the collector-emitter saturation voltage of the BC857B?

    The collector-emitter saturation voltage (Vce(sat)) of the BC857B is 650 mV at 5 mA and 100 mA.

  5. Is the BC857B RoHS compliant?

    Yes, the BC857B is RoHS3 compliant, meaning it is lead-free and environmentally friendly.

  6. What are the typical applications of the BC857B?

    The BC857B is typically used in AF input stages and driver applications due to its low noise and high current gain characteristics.

  7. Does the BC857B have complementary NPN types?

    Yes, the BC857B has complementary NPN types, specifically the BC847-BC850 series.

  8. What is the package type of the BC857B?

    The BC857B is available in TO-236-3, SC-59, and SOT-23-3 packages.

  9. Is the BC857B qualified according to any automotive standards?

    Yes, the BC857B is qualified according to AEC Q101 standards, ensuring its reliability and durability in automotive and other demanding applications.

  10. What is the maximum power dissipation of the BC857B?

    The maximum power dissipation (Pd) of the BC857B is 330 mW.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
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Similar Products

Part Number BC857B BC857BW BC857C BC857A
Manufacturer Infineon Technologies Diotec Semiconductor Diotec Semiconductor Diotec Semiconductor
Product Status Obsolete Active Active Active
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 220 @ 2mA, 5V 420 @ 2mA, 5V 125 @ 2mA, 5V
Power - Max 250 mW 200 mW 250 mW 250 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-323 SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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