MJE5731AG
  • Share:

onsemi MJE5731AG

Manufacturer No:
MJE5731AG
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP 375V 1A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJE5731AG is a high-voltage, high-current PNP bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for various high-power applications, including line-operated audio output amplifiers, switch-mode power supply drivers, and other switching applications. It is packaged in a TO-220 through-hole configuration, making it suitable for a wide range of industrial and consumer electronics.

Key Specifications

ParameterValue
Transistor TypePNP Bipolar Junction Transistor (BJT)
Collector-Base Voltage (Vcb)-350 V
Collector-Emitter Voltage (Vce)-350 V
Emitter-Base Voltage (Veb)-5 V
Collector Current (Ic)-3 A
Power Dissipation (Pd)40 W
Transition Frequency (ft)10 MHz
Package TypeTO-220

Key Features

  • High voltage and current handling capabilities, making it suitable for high-power applications.
  • High transition frequency of 10 MHz, enabling efficient switching operations.
  • TO-220 package for easy mounting and heat dissipation.
  • Designed for reliability and durability in various environmental conditions.

Applications

  • Line-operated audio output amplifiers.
  • Switch-mode power supply drivers.
  • Other switching applications requiring high voltage and current.
  • Industrial and consumer electronics where high power handling is necessary.

Q & A

  1. What is the MJE5731AG transistor type? The MJE5731AG is a PNP bipolar junction transistor (BJT).
  2. What is the maximum collector current of the MJE5731AG? The maximum collector current is -3 A.
  3. What is the maximum collector-base voltage of the MJE5731AG? The maximum collector-base voltage is -350 V.
  4. In what package is the MJE5731AG available? The MJE5731AG is available in a TO-220 through-hole package.
  5. What is the transition frequency of the MJE5731AG? The transition frequency is 10 MHz.
  6. What are some typical applications of the MJE5731AG? Typical applications include line-operated audio output amplifiers, switch-mode power supply drivers, and other high-power switching applications.
  7. What is the power dissipation rating of the MJE5731AG? The power dissipation rating is 40 W.
  8. Is the MJE5731AG suitable for high-power industrial applications? Yes, it is designed for high-power industrial and consumer electronics applications.
  9. Where can I find detailed specifications for the MJE5731AG? Detailed specifications can be found on the official onsemi website, as well as on distributor websites like Mouser, Digi-Key, and RS Components.
  10. What is the emitter-base voltage rating of the MJE5731AG? The emitter-base voltage rating is -5 V.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):375 V
Vce Saturation (Max) @ Ib, Ic:1V @ 200mA, 1A
Current - Collector Cutoff (Max):1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 300mA, 10V
Power - Max:40 W
Frequency - Transition:10MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
0 Remaining View Similar

In Stock

$1.34
331

Please send RFQ , we will respond immediately.

Same Series
MJE5731G
MJE5731G
TRANS PNP 350V 1A TO220
MJE5730G
MJE5730G
TRANS PNP 300V 1A TO220
MJE5731A
MJE5731A
TRANS PNP 375V 1A TO220
MJE5730
MJE5730
TRANS PNP 300V 1A TO220
MJE5731
MJE5731
TRANS PNP 350V 1A TO220

Similar Products

Part Number MJE5731AG MJE5731G MJE5731A
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 375 V 350 V 375 V
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A 1V @ 200mA, 1A 1V @ 200mA, 1A
Current - Collector Cutoff (Max) 1mA 1mA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA, 10V 30 @ 300mA, 10V 30 @ 300mA, 10V
Power - Max 40 W 40 W 40 W
Frequency - Transition 10MHz 10MHz 10MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220

Related Product By Categories

PMBT2907A,215
PMBT2907A,215
Nexperia USA Inc.
TRANS PNP 60V 0.6A TO236AB
MJ2955
MJ2955
NTE Electronics, Inc
TRANS PNP 60V 15A TO3
BD13610S
BD13610S
Fairchild Semiconductor
TRANS PNP 45V 1.5A TO126-3
MMBT5550LT1G
MMBT5550LT1G
onsemi
TRANS NPN 140V 0.6A SOT23-3
BC846B215
BC846B215
NXP USA Inc.
0.1A, 65V, NPN, TO 236AB
BC857CQCZ
BC857CQCZ
Nexperia USA Inc.
TRANS PNP 45V 0.1A DFN1412D-3
BCP56H115
BCP56H115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BLF278
BLF278
Ampleon USA Inc.
RF PFET, 2-ELEMENT, VERY HIGH FR
BC857CW,135
BC857CW,135
Nexperia USA Inc.
TRANS PNP 45V 0.1A SOT323
STF826
STF826
STMicroelectronics
TRANS PNP 30V 3A SOT89-3
BC847CW/DG/B2,115
BC847CW/DG/B2,115
Nexperia USA Inc.
TRANS NPN 45V 0.1A SOT323
PHD13005AD,127
PHD13005AD,127
NXP USA Inc.
TRANS NPN 700V 4A DPAK

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
MMSZ13T1G
MMSZ13T1G
onsemi
DIODE ZENER 13V 500MW SOD123
MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
NL17SZ04XV5T2G
NL17SZ04XV5T2G
onsemi
IC INVERTER 1CH 1-INP SOT553
MC74VHC04DTR2G
MC74VHC04DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
NLV17SZU04DFT2G
NLV17SZU04DFT2G
onsemi
IC INVERTER 1CH 1-INP SC88A
NSV45035JZT1G
NSV45035JZT1G
onsemi
IC REG CCR 45V 35MA SOT223
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3
NCP584HSN12T1G
NCP584HSN12T1G
onsemi
IC REG LINEAR 1.2V 200MA SOT23-5