MJE5731AG
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onsemi MJE5731AG

Manufacturer No:
MJE5731AG
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP 375V 1A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJE5731AG is a high-voltage, high-current PNP bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for various high-power applications, including line-operated audio output amplifiers, switch-mode power supply drivers, and other switching applications. It is packaged in a TO-220 through-hole configuration, making it suitable for a wide range of industrial and consumer electronics.

Key Specifications

ParameterValue
Transistor TypePNP Bipolar Junction Transistor (BJT)
Collector-Base Voltage (Vcb)-350 V
Collector-Emitter Voltage (Vce)-350 V
Emitter-Base Voltage (Veb)-5 V
Collector Current (Ic)-3 A
Power Dissipation (Pd)40 W
Transition Frequency (ft)10 MHz
Package TypeTO-220

Key Features

  • High voltage and current handling capabilities, making it suitable for high-power applications.
  • High transition frequency of 10 MHz, enabling efficient switching operations.
  • TO-220 package for easy mounting and heat dissipation.
  • Designed for reliability and durability in various environmental conditions.

Applications

  • Line-operated audio output amplifiers.
  • Switch-mode power supply drivers.
  • Other switching applications requiring high voltage and current.
  • Industrial and consumer electronics where high power handling is necessary.

Q & A

  1. What is the MJE5731AG transistor type? The MJE5731AG is a PNP bipolar junction transistor (BJT).
  2. What is the maximum collector current of the MJE5731AG? The maximum collector current is -3 A.
  3. What is the maximum collector-base voltage of the MJE5731AG? The maximum collector-base voltage is -350 V.
  4. In what package is the MJE5731AG available? The MJE5731AG is available in a TO-220 through-hole package.
  5. What is the transition frequency of the MJE5731AG? The transition frequency is 10 MHz.
  6. What are some typical applications of the MJE5731AG? Typical applications include line-operated audio output amplifiers, switch-mode power supply drivers, and other high-power switching applications.
  7. What is the power dissipation rating of the MJE5731AG? The power dissipation rating is 40 W.
  8. Is the MJE5731AG suitable for high-power industrial applications? Yes, it is designed for high-power industrial and consumer electronics applications.
  9. Where can I find detailed specifications for the MJE5731AG? Detailed specifications can be found on the official onsemi website, as well as on distributor websites like Mouser, Digi-Key, and RS Components.
  10. What is the emitter-base voltage rating of the MJE5731AG? The emitter-base voltage rating is -5 V.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):375 V
Vce Saturation (Max) @ Ib, Ic:1V @ 200mA, 1A
Current - Collector Cutoff (Max):1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 300mA, 10V
Power - Max:40 W
Frequency - Transition:10MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Similar Products

Part Number MJE5731AG MJE5731G MJE5731A
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 375 V 350 V 375 V
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A 1V @ 200mA, 1A 1V @ 200mA, 1A
Current - Collector Cutoff (Max) 1mA 1mA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA, 10V 30 @ 300mA, 10V 30 @ 300mA, 10V
Power - Max 40 W 40 W 40 W
Frequency - Transition 10MHz 10MHz 10MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220

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