MJE5731AG
  • Share:

onsemi MJE5731AG

Manufacturer No:
MJE5731AG
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP 375V 1A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJE5731AG is a high-voltage, high-current PNP bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for various high-power applications, including line-operated audio output amplifiers, switch-mode power supply drivers, and other switching applications. It is packaged in a TO-220 through-hole configuration, making it suitable for a wide range of industrial and consumer electronics.

Key Specifications

ParameterValue
Transistor TypePNP Bipolar Junction Transistor (BJT)
Collector-Base Voltage (Vcb)-350 V
Collector-Emitter Voltage (Vce)-350 V
Emitter-Base Voltage (Veb)-5 V
Collector Current (Ic)-3 A
Power Dissipation (Pd)40 W
Transition Frequency (ft)10 MHz
Package TypeTO-220

Key Features

  • High voltage and current handling capabilities, making it suitable for high-power applications.
  • High transition frequency of 10 MHz, enabling efficient switching operations.
  • TO-220 package for easy mounting and heat dissipation.
  • Designed for reliability and durability in various environmental conditions.

Applications

  • Line-operated audio output amplifiers.
  • Switch-mode power supply drivers.
  • Other switching applications requiring high voltage and current.
  • Industrial and consumer electronics where high power handling is necessary.

Q & A

  1. What is the MJE5731AG transistor type? The MJE5731AG is a PNP bipolar junction transistor (BJT).
  2. What is the maximum collector current of the MJE5731AG? The maximum collector current is -3 A.
  3. What is the maximum collector-base voltage of the MJE5731AG? The maximum collector-base voltage is -350 V.
  4. In what package is the MJE5731AG available? The MJE5731AG is available in a TO-220 through-hole package.
  5. What is the transition frequency of the MJE5731AG? The transition frequency is 10 MHz.
  6. What are some typical applications of the MJE5731AG? Typical applications include line-operated audio output amplifiers, switch-mode power supply drivers, and other high-power switching applications.
  7. What is the power dissipation rating of the MJE5731AG? The power dissipation rating is 40 W.
  8. Is the MJE5731AG suitable for high-power industrial applications? Yes, it is designed for high-power industrial and consumer electronics applications.
  9. Where can I find detailed specifications for the MJE5731AG? Detailed specifications can be found on the official onsemi website, as well as on distributor websites like Mouser, Digi-Key, and RS Components.
  10. What is the emitter-base voltage rating of the MJE5731AG? The emitter-base voltage rating is -5 V.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):375 V
Vce Saturation (Max) @ Ib, Ic:1V @ 200mA, 1A
Current - Collector Cutoff (Max):1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 300mA, 10V
Power - Max:40 W
Frequency - Transition:10MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
0 Remaining View Similar

In Stock

$1.34
331

Please send RFQ , we will respond immediately.

Same Series
MJE5731G
MJE5731G
TRANS PNP 350V 1A TO220
MJE5730G
MJE5730G
TRANS PNP 300V 1A TO220
MJE5731A
MJE5731A
TRANS PNP 375V 1A TO220
MJE5730
MJE5730
TRANS PNP 300V 1A TO220
MJE5731
MJE5731
TRANS PNP 350V 1A TO220

Similar Products

Part Number MJE5731AG MJE5731G MJE5731A
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 375 V 350 V 375 V
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A 1V @ 200mA, 1A 1V @ 200mA, 1A
Current - Collector Cutoff (Max) 1mA 1mA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA, 10V 30 @ 300mA, 10V 30 @ 300mA, 10V
Power - Max 40 W 40 W 40 W
Frequency - Transition 10MHz 10MHz 10MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220

Related Product By Categories

PZT2907AT1G
PZT2907AT1G
onsemi
TRANS PNP 60V 0.6A SOT223
PBSS5350D,135
PBSS5350D,135
Nexperia USA Inc.
TRANS PNP 50V 3A 6TSOP
TIP121TU
TIP121TU
onsemi
TRANS NPN DARL 80V 5A TO220-3
BC807-40W-AU_R1_000A1
BC807-40W-AU_R1_000A1
Panjit International Inc.
TRANS PNP 45V 0.5A SOT323
NSV1C201MZ4T1G
NSV1C201MZ4T1G
onsemi
TRANS NPN 100V 2A SOT223
BC846BLT3G
BC846BLT3G
onsemi
TRANS NPN 65V 0.1A SOT23-3
SMMBTA56LT1G
SMMBTA56LT1G
onsemi
TRANS PNP 80V 0.5A SOT23-3
MPS751-D26Z
MPS751-D26Z
onsemi
TRANS PNP 60V 2A TO92-3
BC847BWH6327XTSA1
BC847BWH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BCX5316H6327XTSA1
BCX5316H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
MJE340STU
MJE340STU
onsemi
TRANS NPN 300V 0.5A TO126-3
KSA1220AYS
KSA1220AYS
onsemi
TRANS PNP 160V 1.2A TO126

Related Product By Brand

2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
NJW21193G
NJW21193G
onsemi
TRANS PNP 250V 16A TO3P-3L
NTD3055L170-1G
NTD3055L170-1G
onsemi
MOSFET N-CH 60V 9A IPAK
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
NCS20072DR2G
NCS20072DR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
MC34161DMR2G
MC34161DMR2G
onsemi
IC SUPERVISOR 2 CHANNEL MICRO8
LM337TG
LM337TG
onsemi
IC REG LIN NEG ADJ 1.5A TO220
NCV551SN50T1G
NCV551SN50T1G
onsemi
IC REG LINEAR 5V 150MA 5TSOP
NCV8170AMX280TCG
NCV8170AMX280TCG
onsemi
IC REG LINEAR 2.8V 150MA 4XDFN