Overview
The FDMS86200 is an N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH® process with Shielded Gate technology. This MOSFET is designed to offer low on-state resistance (RDS(on)) and superior switching performance. It is packaged in a POWER 56 (PQFN8) package, which is RoHS compliant and features a robust MSL1 design. The device is suitable for high-power applications requiring efficient and reliable operation.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 150 | V |
| Drain Current (ID) | 35 | A |
| On-State Resistance (RDS(on)) at VGS = 10 V, ID = 9.6 A | 18 | mΩ |
| On-State Resistance (RDS(on)) at VGS = 6 V, ID = 8.8 A | 21 | mΩ |
| Rated Power Dissipation | 104 | W |
| Gate Charge (Qg) | 26 | nC |
| Thermal Resistance, Junction to Case (RJC) | 1.2 | °C/W |
| Thermal Resistance, Junction to Ambient (RJA) | 50 | °C/W |
| Package Type | POWER 56 (PQFN8) | |
| Mounting Method | Surface Mount |
Key Features
- Shielded Gate MOSFET Technology: Enhances switching performance and reduces on-state resistance.
- Advanced Package and Silicon Combination: Optimized for low RDS(on) and high efficiency.
- MSL1 Robust Package Design: Ensures reliability and durability.
- 100% UIL Tested: Ensures high quality and reliability.
- RoHS Compliant: Environmentally friendly and compliant with RoHS standards.
Applications
- DC-DC Conversion: Suitable for high-efficiency DC-DC converters due to its low RDS(on) and high switching performance.
- Power Management: Ideal for power management applications requiring high current handling and low on-state resistance.
- Industrial and Automotive Systems: Can be used in various industrial and automotive systems where high power and efficiency are critical.
Q & A
- What is the maximum drain-to-source voltage (Vdss) of the FDMS86200?
The maximum drain-to-source voltage (Vdss) is 150 V.
- What is the maximum drain current (ID) of the FDMS86200?
The maximum drain current (ID) is 35 A.
- What is the on-state resistance (RDS(on)) at VGS = 10 V and ID = 9.6 A?
The on-state resistance (RDS(on)) is 18 mΩ at VGS = 10 V and ID = 9.6 A.
- What is the thermal resistance, junction to case (RJC), of the FDMS86200?
The thermal resistance, junction to case (RJC), is 1.2 °C/W.
- Is the FDMS86200 RoHS compliant?
Yes, the FDMS86200 is RoHS compliant.
- What is the package type of the FDMS86200?
The package type is POWER 56 (PQFN8).
- What are the typical applications of the FDMS86200?
The FDMS86200 is typically used in DC-DC conversion, power management, and various industrial and automotive systems.
- What is the gate charge (Qg) of the FDMS86200?
The gate charge (Qg) is 26 nC.
- Is the FDMS86200 100% UIL tested?
Yes, the FDMS86200 is 100% UIL tested.
- What is the rated power dissipation of the FDMS86200?
The rated power dissipation is 104 W.
