Overview
The FDMS86202 is an N-Channel Shielded Gate PowerTrench® MOSFET produced by ON Semiconductor. This device is part of the PowerTrench® family, which is known for its advanced technology that optimizes on-state resistance while maintaining superior switching performance. The FDMS86202 is designed to operate at high efficiency and is suitable for various power management applications.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| VDS (Drain to Source Voltage) | TJ = 25 °C unless otherwise noted | 120 | V | ||
| VGS (Gate to Source Voltage) | TJ = 25 °C unless otherwise noted | ±20 | V | ||
| ID (Drain Current) - Continuous (TC = 25 °C) | 13.5 | A | |||
| ID (Drain Current) - Continuous (TA = 25 °C) | Note 1a | 64 | A | ||
| ID (Drain Current) - Pulsed | Note 4 | 240 | A | ||
| EAS (Single Pulse Avalanche Energy) | Note 3 | 600 | mJ | ||
| PD (Power Dissipation) - TC = 25 °C | 156 | W | |||
| PD (Power Dissipation) - TA = 25 °C | Note 1a | 2.7 | W | ||
| TJ, TSTG (Operating and Storage Junction Temperature Range) | -55 | +150 | °C | ||
| RθJC (Thermal Resistance, Junction to Case) | 0.8 | °C/W | |||
| RθJA (Thermal Resistance, Junction to Ambient) | Note 1a | 45 | °C/W | ||
| rDS(on) (Static Drain to Source On Resistance) at VGS = 10 V, ID = 13.5 A | 6.0 | 7.2 | mΩ | ||
| rDS(on) (Static Drain to Source On Resistance) at VGS = 6 V, ID = 11.5 A | 8.1 | 10.3 | mΩ |
Key Features
- Shielded Gate MOSFET Technology: Enhances performance by reducing gate to drain capacitance and improving switching characteristics.
- Low On-State Resistance: Maximum rDS(on) of 7.2 mΩ at VGS = 10 V, ID = 13.5 A, and 10.3 mΩ at VGS = 6 V, ID = 11.5 A.
- Advanced Package and Silicon Combination: Optimized for high efficiency and low on-state resistance.
- MSL1 Robust Package Design: Ensures reliability and durability.
- 100% UIL Tested: Guaranteed to meet specific testing standards.
- RoHS Compliant: Meets environmental regulations regarding the use of hazardous substances.
Applications
- DC-DC Conversion: Ideal for power conversion applications due to its high efficiency and low on-state resistance.
- Power Management: Suitable for various power management systems requiring high current handling and low losses.
- Industrial and Automotive Systems: Can be used in high-power applications in industrial and automotive sectors.
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMS86202?
The maximum drain to source voltage (VDS) is 120 V.
- What is the maximum continuous drain current (ID) at TC = 25 °C?
The maximum continuous drain current (ID) at TC = 25 °C is 13.5 A.
- What is the thermal resistance from junction to case (RθJC)?
The thermal resistance from junction to case (RθJC) is 0.8 °C/W.
- What is the typical on-state resistance (rDS(on)) at VGS = 10 V and ID = 13.5 A?
The typical on-state resistance (rDS(on)) at VGS = 10 V and ID = 13.5 A is 7.2 mΩ.
- Is the FDMS86202 RoHS compliant?
Yes, the FDMS86202 is RoHS compliant.
- What are the typical applications of the FDMS86202?
The FDMS86202 is typically used in DC-DC conversion, power management, and high-power applications in industrial and automotive systems.
- What is the maximum gate to source voltage (VGS)?
The maximum gate to source voltage (VGS) is ±20 V.
- What is the single pulse avalanche energy (EAS) rating?
The single pulse avalanche energy (EAS) rating is 600 mJ.
- What is the operating and storage junction temperature range (TJ, TSTG)?
The operating and storage junction temperature range (TJ, TSTG) is -55 to +150 °C.
- Is the FDMS86202 100% UIL tested?
Yes, the FDMS86202 is 100% UIL tested.
