Overview
The FDMS86201 is an N-Channel MOSFET produced by onsemi, utilizing their advanced PowerTrench® process. This technology is specifically designed to minimize on-state resistance while maintaining superior switching performance. The MOSFET is part of onsemi's low to medium voltage MOSFET family, making it suitable for a variety of power management applications.
Key Specifications
| Parameter | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (Drain to Source Voltage) | - | - | - | 150 | V |
| VGS (Gate to Source Voltage) | - | - | - | ±20 | V |
| ID (Continuous Drain Current at TC = 25°C) | - | - | - | 11.6 | A |
| ID (Continuous Drain Current at TA = 25°C) | - | - | - | 49 | A |
| RDS(on) (Static Drain to Source On Resistance at VGS = 10 V, ID = 9.6 A) | - | - | 18 | mΩ | |
| RDS(on) (Static Drain to Source On Resistance at VGS = 6 V, ID = 8.8 A) | - | - | 21 | mΩ | |
| PD (Power Dissipation at TC = 25°C) | - | - | - | 104 | W |
| TJ, TSTG (Operating and Storage Junction Temperature Range) | - | -55 | - | 150 | °C |
Key Features
- Shielded Gate MOSFET Technology: Enhances switching performance and reduces on-state resistance.
- Advanced Package and Silicon Combination: Optimized for low RDS(on) and high efficiency.
- MSL1 Robust Package Design: Ensures reliability and durability.
- 100% UIL Tested: Guaranteed to meet strict quality standards.
- RoHS Compliant: Meets environmental regulations.
Applications
- DC-DC Conversion: Suitable for power conversion applications due to its low on-state resistance and high switching performance.
- Power Management: Ideal for various power management systems requiring efficient and reliable MOSFETs.
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMS86201?
The maximum drain to source voltage (VDS) is 150 V.
- What is the typical on-state resistance (RDS(on)) at VGS = 10 V and ID = 9.6 A?
The typical on-state resistance (RDS(on)) is 18 mΩ.
- What is the continuous drain current rating at TC = 25°C?
The continuous drain current rating at TC = 25°C is 11.6 A.
- Is the FDMS86201 RoHS compliant?
Yes, the FDMS86201 is RoHS compliant.
- What is the operating and storage junction temperature range for the FDMS86201?
The operating and storage junction temperature range is -55°C to 150°C.
- What is the power dissipation rating at TC = 25°C?
The power dissipation rating at TC = 25°C is 104 W.
- What technology is used in the FDMS86201 MOSFET?
The FDMS86201 uses onsemi's advanced PowerTrench® process with Shielded Gate technology.
- Is the FDMS86201 suitable for DC-DC conversion applications?
Yes, it is suitable for DC-DC conversion applications due to its low on-state resistance and high switching performance.
- What is the gate to source threshold voltage (VGS(th)) range?
The gate to source threshold voltage (VGS(th)) range is 2.0 V to 4.0 V.
- What is the typical forward transconductance (gFS) at VDS = 10 V and ID = 9.6 A?
The typical forward transconductance (gFS) is 33 S.
