BD138G
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onsemi BD138G

Manufacturer No:
BD138G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP 60V 1.5A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD138G is a medium-power silicon PNP transistor manufactured by onsemi. This transistor is part of the BD136G, BD138G, and BD140G series, designed for use in audio amplifiers and drivers, particularly in complementary or quasi-complementary circuits. The BD138G is known for its high DC current gain and is RoHS compliant, making it suitable for a variety of electronic applications.

Key Specifications

CharacteristicSymbolValueUnit
Collector-Emitter VoltageVCEO60Vdc
Collector-Base VoltageVCBO60Vdc
Emitter-Base VoltageVEBO5.0Vdc
Collector CurrentIC1.5Adc
Base CurrentIB0.5Adc
Total Device Dissipation @ TA = 25°CPD12.5Watts
Operating and Storage Junction Temperature RangeTJ, Tstg–55 to +150°C
Thermal Resistance, Junction-to-CaseRJC10°C/W
Thermal Resistance, Junction-to-AmbientRJA100°C/W
DC Current Gain (IC = 0.15 A, VCE = 2 V)hFE25 - 250
Collector-Emitter Saturation Voltage (IC = 0.5 Adc, IB = 0.05 Adc)VCE(sat)0.5Vdc

Key Features

  • High DC current gain
  • Complementary with BD135, BD137, and BD139 series
  • Pb-Free, Halogen Free/BFR Free, and RoHS compliant
  • Designed for use in audio amplifiers and drivers
  • Medium-power silicon PNP transistor

Applications

The BD138G transistor is primarily used in audio amplifiers and drivers, particularly in complementary or quasi-complementary circuits. It is also suitable for general-purpose amplifier applications and can be used in various electronic devices requiring medium-power PNP transistors.

Q & A

  1. What is the collector-emitter voltage rating of the BD138G transistor?
    The collector-emitter voltage rating of the BD138G transistor is 60 Vdc.
  2. What is the maximum collector current of the BD138G transistor?
    The maximum collector current of the BD138G transistor is 1.5 Adc.
  3. Is the BD138G transistor RoHS compliant?
    Yes, the BD138G transistor is RoHS compliant.
  4. What is the thermal resistance, junction-to-case, of the BD138G transistor?
    The thermal resistance, junction-to-case, of the BD138G transistor is 10 °C/W.
  5. What is the typical DC current gain of the BD138G transistor?
    The typical DC current gain of the BD138G transistor is between 25 and 250.
  6. What are the primary applications of the BD138G transistor?
    The primary applications of the BD138G transistor include audio amplifiers and drivers, particularly in complementary or quasi-complementary circuits.
  7. What is the maximum operating junction temperature of the BD138G transistor?
    The maximum operating junction temperature of the BD138G transistor is +150 °C.
  8. Is the BD138G transistor Pb-Free?
    Yes, the BD138G transistor is Pb-Free.
  9. What is the collector-emitter saturation voltage of the BD138G transistor?
    The collector-emitter saturation voltage of the BD138G transistor is 0.5 Vdc.
  10. What package types are available for the BD138G transistor?
    The BD138G transistor is available in the TO-225 package.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:1.25 W
Frequency - Transition:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
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Same Series
BD140
BD140
TRANS PNP 80V 1.5A SOT32-3
BD138G
BD138G
TRANS PNP 60V 1.5A TO126
BD140G
BD140G
TRANS PNP 80V 1.5A TO126
BD136G
BD136G
TRANS PNP 45V 1.5A TO126

Similar Products

Part Number BD138G BD139G BD238G BD135G BD136G BD137G BD138
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi STMicroelectronics
Product Status Active Active Obsolete Active Active Active Active
Transistor Type PNP NPN PNP NPN PNP NPN PNP
Current - Collector (Ic) (Max) 1.5 A 1.5 A 2 A 1.5 A 1.5 A 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 80 V 45 V 45 V 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 600mV @ 100mA, 1A 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100µA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V
Power - Max 1.25 W 12.5 W 25 W 1.25 W 1.25 W 1.25 W 1.25 W
Frequency - Transition - - 3MHz - - - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126 TO-126 TO-126 TO-126 TO-126 SOT-32-3

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