BD138
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STMicroelectronics BD138

Manufacturer No:
BD138
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS PNP 60V 1.5A SOT32-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD138, manufactured by STMicroelectronics, is a PNP silicon power transistor designed for medium-power linear and switching applications. It is housed in a TO-126 package and is part of a series that includes the BD136 and BD140, which are complementary to the NPN transistors BD135, BD137, and BD139 respectively.

This transistor is particularly suited for use in audio amplifiers and drivers, utilizing complementary or quasi-complementary circuits. The BD138 is known for its high current handling capability and moderate voltage ratings, making it a versatile component in various electronic projects.

Key Specifications

No. Rating Symbol Value Unit
1 Collector-Emitter Voltage Vce 60 V
2 Collector-Base Voltage Vcb 60 V
3 Emitter-Base Voltage Veb 5 V
4 Collector Current Ic 1.5 A
5 Current Gain (hFE) hfe 40 to 250
6 Power Dissipation Ptot 12.5 W
7 Storage Temperature Tstg -55 to 150 °C
8 Transition Frequency (ft) ft 50 MHz
9 Maximum Operating Junction Temperature (Tj) Tj 150 °C
10 Package TO-126

Key Features

  • High Current Handling: The BD138 can handle a maximum collector current of 1.5 A, making it suitable for high-current applications.
  • Moderate Voltage Ratings: With collector-emitter and collector-base voltages of 60 V, this transistor can handle moderate voltage levels.
  • High DC Current Gain: The transistor has a minimum DC current gain (hFE) of 40, ensuring reliable amplification.
  • Medium Power Dissipation: The BD138 has a power dissipation of 12.5 W, suitable for medium-power applications.
  • Complementary Transistors: It is complementary to the NPN transistors BD135, BD137, and BD139, making it versatile in circuit design.
  • PNP Configuration: As a PNP transistor, it uses holes as majority carriers, with the base terminal being negative and the emitter and collector terminals being positive.

Applications

  • Audio Amplifiers: The BD138 is commonly used in audio amplification circuits due to its high current handling and moderate voltage ratings.
  • Driver Stages: It is used in driver stages of high-fidelity amplifiers and television circuits.
  • Switching Applications: The transistor is also suitable for switching applications where medium power and moderate voltage are required.
  • Complementary Circuits: It is used in complementary or quasi-complementary circuits, enhancing the overall performance of the system.

Q & A

  1. What is the maximum collector-emitter voltage of the BD138 transistor?

    The maximum collector-emitter voltage (Vce) of the BD138 transistor is 60 V.

  2. What is the maximum collector current of the BD138 transistor?

    The maximum collector current (Ic) of the BD138 transistor is 1.5 A.

  3. What is the package type of the BD138 transistor?

    The BD138 transistor is housed in a TO-126 package.

  4. What are the complementary NPN transistors to the BD138?

    The complementary NPN transistor to the BD138 is the BD137.

  5. What are the typical applications of the BD138 transistor?

    The BD138 transistor is typically used in audio amplifiers, driver stages, and switching applications.

  6. What is the maximum power dissipation of the BD138 transistor?

    The maximum power dissipation (Ptot) of the BD138 transistor is 12.5 W.

  7. What is the transition frequency (ft) of the BD138 transistor?

    The transition frequency (ft) of the BD138 transistor is 50 MHz.

  8. What is the maximum operating junction temperature (Tj) of the BD138 transistor?

    The maximum operating junction temperature (Tj) of the BD138 transistor is 150 °C.

  9. What is the storage temperature range for the BD138 transistor?

    The storage temperature range (Tstg) for the BD138 transistor is -55 to 150 °C.

  10. What is the minimum DC current gain (hFE) of the BD138 transistor?

    The minimum DC current gain (hFE) of the BD138 transistor is 40.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:1.25 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:SOT-32-3
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Same Series
BD140
BD140
TRANS PNP 80V 1.5A SOT32-3
BD138G
BD138G
TRANS PNP 60V 1.5A TO126
BD140G
BD140G
TRANS PNP 80V 1.5A TO126
BD136G
BD136G
TRANS PNP 45V 1.5A TO126

Similar Products

Part Number BD138 BD138G BD139 BD238 BD135 BD136 BD137
Manufacturer STMicroelectronics onsemi STMicroelectronics onsemi STMicroelectronics STMicroelectronics onsemi
Product Status Active Active Active Obsolete Active Active Obsolete
Transistor Type PNP PNP NPN PNP NPN PNP NPN
Current - Collector (Ic) (Max) 1.5 A 1.5 A 1.5 A 2 A 1.5 A 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V 80 V 80 V 45 V 45 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 600mV @ 100mA, 1A 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100µA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 25 @ 1A, 2V 40 @ 150mA, 2V 40 @ 2V, 150MA 40 @ 150mA, 2V
Power - Max 1.25 W 1.25 W 1.25 W 25 W 1.25 W 1.25 W 1.25 W
Frequency - Transition - - - - - - -
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package SOT-32-3 TO-126 SOT-32-3 SOT-32-3 SOT-32-3 SOT-32-3 TO-126

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