STL6P3LLH6
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STMicroelectronics STL6P3LLH6

Manufacturer No:
STL6P3LLH6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 6A POWERFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The STL6P3LLH6 is a P-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET H6 technology. This device features a new trench gate structure, which significantly enhances its performance by reducing on-resistance and gate charge. The STL6P3LLH6 is designed for high-efficiency applications, offering low power loss and high avalanche ruggedness. It is packaged in a Surface Mount PowerFlat™ (3.3x3.3) format, making it suitable for a variety of industrial and automotive applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
ID (Drain Current)6 A
RDS(on) (On-Resistance)0.024 Ω (typ.)
PD (Power Dissipation)2.9 W
PackagePowerFlat™ (3.3x3.3)
Operating Temperature-40°C to 150°C

Key Features

  • Very low on-resistance (RDS(on))
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss

Applications

The STL6P3LLH6 is suitable for a wide range of applications, including industrial and automotive systems. It is particularly useful in power management circuits, motor control, and other high-efficiency power switching applications.

Q & A

  1. What is the drain-source voltage rating of the STL6P3LLH6?
    The drain-source voltage rating is 30 V.
  2. What is the typical on-resistance of the STL6P3LLH6?
    The typical on-resistance is 0.024 Ω.
  3. What is the maximum drain current of the STL6P3LLH6?
    The maximum drain current is 6 A.
  4. What is the package type of the STL6P3LLH6?
    The package type is Surface Mount PowerFlat™ (3.3x3.3).
  5. What is the operating temperature range of the STL6P3LLH6?
    The operating temperature range is -40°C to 150°C.
  6. What technology is used in the STL6P3LLH6?
    The STL6P3LLH6 is developed using the STripFET H6 technology.
  7. What are the key features of the STL6P3LLH6?
    The key features include very low on-resistance, very low gate charge, high avalanche ruggedness, and low gate drive power loss.
  8. Where can I find EDA symbols, footprints, and 3D models for the STL6P3LLH6?
    You can find these resources on the STMicroelectronics website.
  9. Is the STL6P3LLH6 RoHS compliant?
    Yes, the STL6P3LLH6 is RoHS compliant with an Ecopack2 grade.
  10. What are some typical applications for the STL6P3LLH6?
    Typical applications include industrial and automotive systems, power management circuits, and motor control.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:30mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1450 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.9W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (3.3x3.3)
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL6P3LLH6 STL9P3LLH6 STL4P3LLH6 STL62P3LLH6 STL6N3LLH6
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Active
FET Type P-Channel P-Channel P-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 9A (Tc) 4A (Ta) 62A (Tc) 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 3A, 10V 15mOhm @ 4.5A, 10V 56mOhm @ 2A, 10V 10.5mOhm @ 7A, 10V 25mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA (Min) 1V @ 250µA 2.5V @ 250µA 1V @ 250µA (Min) 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V 24 nC @ 4.5 V 6 nC @ 4.5 V 33 nC @ 4.5 V 3.6 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 25 V 2615 pF @ 25 V 639 pF @ 25 V 3350 pF @ 25 V 283 pF @ 24 V
FET Feature - - - - -
Power Dissipation (Max) 2.9W (Tc) 3W (Ta) 2.4W (Ta) 100W (Tc) 2.4W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (3.3x3.3) PowerFlat™ (3.3x3.3) PowerFlat™ (2x2) PowerFlat™ (5x6) PowerFlat™ (2x2)
Package / Case 8-PowerVDFN 8-PowerVDFN 6-PowerWDFN 8-PowerVDFN 6-PowerWDFN

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