Overview
The STL6N3LLH6 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET™ H6 technology. This device features a new trench gate structure, enhancing its performance and efficiency. It is designed for high-power applications, offering a combination of low on-resistance and high current handling capabilities.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | 30 V |
| RDS(on) (On-Resistance) | 0.021 Ω (typ.) |
| ID (Drain Current) | 6 A |
| ID (Continuous Drain Current at Tc) | 13 A |
| PD (Power Dissipation at Tc) | 2.4 W |
| Package | PowerFlat™ (2x2) |
Key Features
- Advanced STripFET™ H6 technology with a new trench gate structure for improved performance.
- Low on-resistance (RDS(on)) of 0.021 Ω (typ.), reducing power losses.
- High current handling capability with a continuous drain current of 13 A at Tc.
- Compact PowerFlat™ (2x2) package, suitable for space-constrained applications.
- High voltage rating of 30 V, making it suitable for a wide range of power applications.
Applications
The STL6N3LLH6 is suitable for various high-power applications, including but not limited to:
- DC-DC converters and power supplies.
- Motor control and drive systems.
- Power management in automotive and industrial systems.
- High-efficiency power switching in consumer electronics.
Q & A
- What is the typical on-resistance of the STL6N3LLH6?
The typical on-resistance (RDS(on)) is 0.021 Ω. - What is the maximum drain-source voltage rating of the STL6N3LLH6?
The maximum drain-source voltage (VDS) is 30 V. - What is the continuous drain current at Tc for the STL6N3LLH6?
The continuous drain current at Tc is 13 A. - What package type is the STL6N3LLH6 available in?
The STL6N3LLH6 is available in the PowerFlat™ (2x2) package. - What technology is used in the STL6N3LLH6?
The STL6N3LLH6 uses the STripFET™ H6 technology with a new trench gate structure. - What are some common applications for the STL6N3LLH6?
Common applications include DC-DC converters, motor control systems, automotive and industrial power management, and high-efficiency power switching in consumer electronics. - What is the power dissipation at Tc for the STL6N3LLH6?
The power dissipation at Tc is 2.4 W. - Is the STL6N3LLH6 suitable for high-power applications?
Yes, the STL6N3LLH6 is designed for high-power applications due to its low on-resistance and high current handling capabilities. - Where can I purchase the STL6N3LLH6?
The STL6N3LLH6 can be purchased from various electronic component distributors such as Digi-Key, TME, and others. - What is the significance of the DeepGATE™ technology in the STL6N3LLH6?
The DeepGATE™ technology is part of the STripFET™ H6 technology, enhancing the device's performance by improving the gate structure.
