FDMS86255ET150
  • Share:

onsemi FDMS86255ET150

Manufacturer No:
FDMS86255ET150
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 10A/63A POWER56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS86255ET150 is a high-performance N-Channel Shielded Gate PowerTrench® MOSFET produced by onsemi. This device is designed for low to medium voltage applications and offers excellent electrical characteristics, making it suitable for a variety of power management and switching applications. With its robust construction and advanced PowerTrench technology, the FDMS86255ET150 provides high efficiency and reliability.

Key Specifications

ParameterValue
Drain-Source Breakdown Voltage (Vds)150 V
Continuous Drain Current (Id)45 A
Drain-Source On-Resistance (Rds On)9.5 mΩ
Gate-Source Voltage (Vgs)±20 V
Maximum Junction Temperature175°C
Package TypePower56, Surface Mount

Key Features

  • High current capability with a continuous drain current of 45 A and a maximum drain current of 63 A.
  • Low on-resistance of 9.5 mΩ, enhancing efficiency in power applications.
  • Shielded Gate PowerTrench technology for improved performance and reliability.
  • High junction temperature rating of up to 175°C, suitable for demanding environments.
  • Surface mount package (Power56) for easy integration into modern PCB designs.

Applications

The FDMS86255ET150 is versatile and can be used in a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial power management systems.
  • Automotive systems requiring high reliability and performance.
  • Renewable energy systems such as solar and wind power.

Q & A

  1. What is the maximum drain-source breakdown voltage of the FDMS86255ET150?
    The maximum drain-source breakdown voltage is 150 V.
  2. What is the continuous drain current rating of the FDMS86255ET150?
    The continuous drain current rating is 45 A.
  3. What is the on-resistance of the FDMS86255ET150?
    The on-resistance is 9.5 mΩ.
  4. What is the maximum junction temperature for the FDMS86255ET150?
    The maximum junction temperature is 175°C.
  5. What package type does the FDMS86255ET150 use?
    The FDMS86255ET150 uses a Power56 surface mount package.
  6. What technology is used in the FDMS86255ET150?
    The FDMS86255ET150 uses Shielded Gate PowerTrench technology.
  7. Is the FDMS86255ET150 suitable for automotive applications?
    Yes, it is suitable for automotive systems due to its high reliability and performance.
  8. Can the FDMS86255ET150 be used in renewable energy systems?
    Yes, it can be used in renewable energy systems such as solar and wind power.
  9. What are some common applications for the FDMS86255ET150?
    Common applications include power supplies, motor control systems, industrial power management, and automotive systems.
  10. Where can I find detailed specifications for the FDMS86255ET150?
    Detailed specifications can be found on the official onsemi website, as well as through distributors like Mouser and Farnell.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:12.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4480 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):3.3W (Ta), 136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$6.15
82

Please send RFQ , we will respond immediately.

Related Product By Categories

FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
NB3U1548CDR2G
NB3U1548CDR2G
onsemi
IC CLK BUFFER 160MHZ 8SOIC
MC74HC163ADR2G
MC74HC163ADR2G
onsemi
LOG CMOS COUNTER 4BIT SOIC16
UC2842BD
UC2842BD
onsemi
IC REG CTRLR PWM CM 14-SOIC
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5
MC33375ST-3.0T3
MC33375ST-3.0T3
onsemi
IC REG LINEAR 3V 300MA SOT223
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD