FDMS86255ET150
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onsemi FDMS86255ET150

Manufacturer No:
FDMS86255ET150
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 10A/63A POWER56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS86255ET150 is a high-performance N-Channel Shielded Gate PowerTrench® MOSFET produced by onsemi. This device is designed for low to medium voltage applications and offers excellent electrical characteristics, making it suitable for a variety of power management and switching applications. With its robust construction and advanced PowerTrench technology, the FDMS86255ET150 provides high efficiency and reliability.

Key Specifications

ParameterValue
Drain-Source Breakdown Voltage (Vds)150 V
Continuous Drain Current (Id)45 A
Drain-Source On-Resistance (Rds On)9.5 mΩ
Gate-Source Voltage (Vgs)±20 V
Maximum Junction Temperature175°C
Package TypePower56, Surface Mount

Key Features

  • High current capability with a continuous drain current of 45 A and a maximum drain current of 63 A.
  • Low on-resistance of 9.5 mΩ, enhancing efficiency in power applications.
  • Shielded Gate PowerTrench technology for improved performance and reliability.
  • High junction temperature rating of up to 175°C, suitable for demanding environments.
  • Surface mount package (Power56) for easy integration into modern PCB designs.

Applications

The FDMS86255ET150 is versatile and can be used in a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial power management systems.
  • Automotive systems requiring high reliability and performance.
  • Renewable energy systems such as solar and wind power.

Q & A

  1. What is the maximum drain-source breakdown voltage of the FDMS86255ET150?
    The maximum drain-source breakdown voltage is 150 V.
  2. What is the continuous drain current rating of the FDMS86255ET150?
    The continuous drain current rating is 45 A.
  3. What is the on-resistance of the FDMS86255ET150?
    The on-resistance is 9.5 mΩ.
  4. What is the maximum junction temperature for the FDMS86255ET150?
    The maximum junction temperature is 175°C.
  5. What package type does the FDMS86255ET150 use?
    The FDMS86255ET150 uses a Power56 surface mount package.
  6. What technology is used in the FDMS86255ET150?
    The FDMS86255ET150 uses Shielded Gate PowerTrench technology.
  7. Is the FDMS86255ET150 suitable for automotive applications?
    Yes, it is suitable for automotive systems due to its high reliability and performance.
  8. Can the FDMS86255ET150 be used in renewable energy systems?
    Yes, it can be used in renewable energy systems such as solar and wind power.
  9. What are some common applications for the FDMS86255ET150?
    Common applications include power supplies, motor control systems, industrial power management, and automotive systems.
  10. Where can I find detailed specifications for the FDMS86255ET150?
    Detailed specifications can be found on the official onsemi website, as well as through distributors like Mouser and Farnell.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:12.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4480 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):3.3W (Ta), 136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
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