FDMS86255ET150
  • Share:

onsemi FDMS86255ET150

Manufacturer No:
FDMS86255ET150
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 10A/63A POWER56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS86255ET150 is a high-performance N-Channel Shielded Gate PowerTrench® MOSFET produced by onsemi. This device is designed for low to medium voltage applications and offers excellent electrical characteristics, making it suitable for a variety of power management and switching applications. With its robust construction and advanced PowerTrench technology, the FDMS86255ET150 provides high efficiency and reliability.

Key Specifications

ParameterValue
Drain-Source Breakdown Voltage (Vds)150 V
Continuous Drain Current (Id)45 A
Drain-Source On-Resistance (Rds On)9.5 mΩ
Gate-Source Voltage (Vgs)±20 V
Maximum Junction Temperature175°C
Package TypePower56, Surface Mount

Key Features

  • High current capability with a continuous drain current of 45 A and a maximum drain current of 63 A.
  • Low on-resistance of 9.5 mΩ, enhancing efficiency in power applications.
  • Shielded Gate PowerTrench technology for improved performance and reliability.
  • High junction temperature rating of up to 175°C, suitable for demanding environments.
  • Surface mount package (Power56) for easy integration into modern PCB designs.

Applications

The FDMS86255ET150 is versatile and can be used in a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial power management systems.
  • Automotive systems requiring high reliability and performance.
  • Renewable energy systems such as solar and wind power.

Q & A

  1. What is the maximum drain-source breakdown voltage of the FDMS86255ET150?
    The maximum drain-source breakdown voltage is 150 V.
  2. What is the continuous drain current rating of the FDMS86255ET150?
    The continuous drain current rating is 45 A.
  3. What is the on-resistance of the FDMS86255ET150?
    The on-resistance is 9.5 mΩ.
  4. What is the maximum junction temperature for the FDMS86255ET150?
    The maximum junction temperature is 175°C.
  5. What package type does the FDMS86255ET150 use?
    The FDMS86255ET150 uses a Power56 surface mount package.
  6. What technology is used in the FDMS86255ET150?
    The FDMS86255ET150 uses Shielded Gate PowerTrench technology.
  7. Is the FDMS86255ET150 suitable for automotive applications?
    Yes, it is suitable for automotive systems due to its high reliability and performance.
  8. Can the FDMS86255ET150 be used in renewable energy systems?
    Yes, it can be used in renewable energy systems such as solar and wind power.
  9. What are some common applications for the FDMS86255ET150?
    Common applications include power supplies, motor control systems, industrial power management, and automotive systems.
  10. Where can I find detailed specifications for the FDMS86255ET150?
    Detailed specifications can be found on the official onsemi website, as well as through distributors like Mouser and Farnell.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:12.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4480 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):3.3W (Ta), 136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$6.15
82

Please send RFQ , we will respond immediately.

Related Product By Categories

BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
STD60N55F3
STD60N55F3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

NRVBD1035VCTLT4G
NRVBD1035VCTLT4G
onsemi
DIODE SCHOTTKY DPAK
SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
NTMFS015N15MC
NTMFS015N15MC
onsemi
MOSFET N-CH 150V 9.2A/61A 8PQFN
FGHL75T65MQD
FGHL75T65MQD
onsemi
IGBT 650V 75A TO247
MC74HC4051ADWR2G
MC74HC4051ADWR2G
onsemi
IC MUX/DEMUX 8X1 16SOIC
MC33074APG
MC33074APG
onsemi
IC OPAMP JFET 4 CIRCUIT 14DIP
MC74AC273DTR2G
MC74AC273DTR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20TSSOP
TLV431ALPG
TLV431ALPG
onsemi
IC VREF SHUNT ADJ 1% TO92-3
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5
NCP715SQ33T2G
NCP715SQ33T2G
onsemi
IC REG LINEAR 3.3V 50MA SC88A
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4