FDMS86255ET150
  • Share:

onsemi FDMS86255ET150

Manufacturer No:
FDMS86255ET150
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 10A/63A POWER56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS86255ET150 is a high-performance N-Channel Shielded Gate PowerTrench® MOSFET produced by onsemi. This device is designed for low to medium voltage applications and offers excellent electrical characteristics, making it suitable for a variety of power management and switching applications. With its robust construction and advanced PowerTrench technology, the FDMS86255ET150 provides high efficiency and reliability.

Key Specifications

ParameterValue
Drain-Source Breakdown Voltage (Vds)150 V
Continuous Drain Current (Id)45 A
Drain-Source On-Resistance (Rds On)9.5 mΩ
Gate-Source Voltage (Vgs)±20 V
Maximum Junction Temperature175°C
Package TypePower56, Surface Mount

Key Features

  • High current capability with a continuous drain current of 45 A and a maximum drain current of 63 A.
  • Low on-resistance of 9.5 mΩ, enhancing efficiency in power applications.
  • Shielded Gate PowerTrench technology for improved performance and reliability.
  • High junction temperature rating of up to 175°C, suitable for demanding environments.
  • Surface mount package (Power56) for easy integration into modern PCB designs.

Applications

The FDMS86255ET150 is versatile and can be used in a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial power management systems.
  • Automotive systems requiring high reliability and performance.
  • Renewable energy systems such as solar and wind power.

Q & A

  1. What is the maximum drain-source breakdown voltage of the FDMS86255ET150?
    The maximum drain-source breakdown voltage is 150 V.
  2. What is the continuous drain current rating of the FDMS86255ET150?
    The continuous drain current rating is 45 A.
  3. What is the on-resistance of the FDMS86255ET150?
    The on-resistance is 9.5 mΩ.
  4. What is the maximum junction temperature for the FDMS86255ET150?
    The maximum junction temperature is 175°C.
  5. What package type does the FDMS86255ET150 use?
    The FDMS86255ET150 uses a Power56 surface mount package.
  6. What technology is used in the FDMS86255ET150?
    The FDMS86255ET150 uses Shielded Gate PowerTrench technology.
  7. Is the FDMS86255ET150 suitable for automotive applications?
    Yes, it is suitable for automotive systems due to its high reliability and performance.
  8. Can the FDMS86255ET150 be used in renewable energy systems?
    Yes, it can be used in renewable energy systems such as solar and wind power.
  9. What are some common applications for the FDMS86255ET150?
    Common applications include power supplies, motor control systems, industrial power management, and automotive systems.
  10. Where can I find detailed specifications for the FDMS86255ET150?
    Detailed specifications can be found on the official onsemi website, as well as through distributors like Mouser and Farnell.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:12.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4480 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):3.3W (Ta), 136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$6.15
82

Please send RFQ , we will respond immediately.

Related Product By Categories

AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3

Related Product By Brand

BAV70_D87Z
BAV70_D87Z
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
NRVBD1035VCTLT4G
NRVBD1035VCTLT4G
onsemi
DIODE SCHOTTKY DPAK
1N5353BRL
1N5353BRL
onsemi
DIODE ZENER 16V 5W AXIAL
2SD1628G-TD-E
2SD1628G-TD-E
onsemi
TRANS NPN 20V 5A PCP
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
NCV7344AMW3R2G
NCV7344AMW3R2G
onsemi
IC TRANSCEIVER HALF 1/1 8DFNW
NCP1076BBP100G
NCP1076BBP100G
onsemi
IC OFFLINE SWITCH FLYBACK 8DIP
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
NCP380LSN05AAT1G
NCP380LSN05AAT1G
onsemi
IC PWR SWITCH P-CHAN 1:1 5TSOP
NCP81101MNTXG
NCP81101MNTXG
onsemi
IC REG BUCK CTLR 1PH 28QFN
NCP1566MNTXG
NCP1566MNTXG
onsemi
IC PWM CTLR ACT CLAMP 24QFN