NTNS3A65PZT5GHW
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onsemi NTNS3A65PZT5GHW

Manufacturer No:
NTNS3A65PZT5GHW
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 281MA SOT883
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTNS3A65PZT5GHW is a high-performance N-Channel MOSFET from onsemi, designed to meet the demands of modern power systems. This device is part of onsemi's advanced MOSFET family, leveraging cutting-edge technology to provide superior switching performance, low on-resistance, and high efficiency.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (VDSS)650V
Gate to Source Voltage (VGSS)±30V
Continuous Drain Current (ID)47A
Pulsed Drain Current (IDM)132A
On-Resistance (RDS(on))Typ. 45 mΩmΩ
Gate Charge (Qg)Typ. 96 nCnC
Effective Output Capacitance (Coss(eff.))Typ. 880 pFpF
Operating and Storage Temperature Range-55 to +150°C

Key Features

  • High voltage super-junction (SJ) MOSFET technology for low on-resistance and lower gate charge.
  • Superior switching performance and ability to withstand extreme dv/dt rates.
  • Ultra-low gate charge and low effective output capacitance.
  • 100% avalanche tested for reliability.
  • Pb-free and RoHS compliant.

Applications

  • Telecom and server power supplies.
  • Industrial power supplies.
  • Electric vehicle (EV) chargers.
  • Uninterruptible power supplies (UPS) and solar power systems.

Q & A

  1. What is the maximum drain to source voltage of the NTNS3A65PZT5GHW?
    The maximum drain to source voltage (VDSS) is 650 V.
  2. What is the typical on-resistance of this MOSFET?
    The typical on-resistance (RDS(on)) is 45 mΩ.
  3. What is the maximum continuous drain current?
    The maximum continuous drain current (ID) is 47 A at TC = 25°C.
  4. Is this MOSFET Pb-free and RoHS compliant?
    Yes, the NTNS3A65PZT5GHW is Pb-free and RoHS compliant.
  5. What are the typical gate charge and effective output capacitance?
    The typical gate charge (Qg) is 96 nC, and the typical effective output capacitance (Coss(eff.)) is 880 pF.
  6. What are the operating and storage temperature ranges?
    The operating and storage temperature range is -55 to +150°C.
  7. What are some common applications for this MOSFET?
    Common applications include telecom and server power supplies, industrial power supplies, EV chargers, and UPS/solar power systems.
  8. How does this MOSFET handle avalanche conditions?
    This MOSFET is 100% avalanche tested, ensuring reliability under such conditions.
  9. What is the maximum lead temperature for soldering?
    The maximum lead temperature for soldering is 260°C.
  10. What is the thermal resistance from junction to case?
    The thermal resistance from junction to case (RθJC) is 0.41°C/W.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:281mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.1 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:44 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):155mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-883 (XDFN3) (1x0.6)
Package / Case:3-XFDFN
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