NTNS3A65PZT5GHW
  • Share:

onsemi NTNS3A65PZT5GHW

Manufacturer No:
NTNS3A65PZT5GHW
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 281MA SOT883
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTNS3A65PZT5GHW is a high-performance N-Channel MOSFET from onsemi, designed to meet the demands of modern power systems. This device is part of onsemi's advanced MOSFET family, leveraging cutting-edge technology to provide superior switching performance, low on-resistance, and high efficiency.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (VDSS)650V
Gate to Source Voltage (VGSS)±30V
Continuous Drain Current (ID)47A
Pulsed Drain Current (IDM)132A
On-Resistance (RDS(on))Typ. 45 mΩ
Gate Charge (Qg)Typ. 96 nCnC
Effective Output Capacitance (Coss(eff.))Typ. 880 pFpF
Operating and Storage Temperature Range-55 to +150°C

Key Features

  • High voltage super-junction (SJ) MOSFET technology for low on-resistance and lower gate charge.
  • Superior switching performance and ability to withstand extreme dv/dt rates.
  • Ultra-low gate charge and low effective output capacitance.
  • 100% avalanche tested for reliability.
  • Pb-free and RoHS compliant.

Applications

  • Telecom and server power supplies.
  • Industrial power supplies.
  • Electric vehicle (EV) chargers.
  • Uninterruptible power supplies (UPS) and solar power systems.

Q & A

  1. What is the maximum drain to source voltage of the NTNS3A65PZT5GHW?
    The maximum drain to source voltage (VDSS) is 650 V.
  2. What is the typical on-resistance of this MOSFET?
    The typical on-resistance (RDS(on)) is 45 mΩ.
  3. What is the maximum continuous drain current?
    The maximum continuous drain current (ID) is 47 A at TC = 25°C.
  4. Is this MOSFET Pb-free and RoHS compliant?
    Yes, the NTNS3A65PZT5GHW is Pb-free and RoHS compliant.
  5. What are the typical gate charge and effective output capacitance?
    The typical gate charge (Qg) is 96 nC, and the typical effective output capacitance (Coss(eff.)) is 880 pF.
  6. What are the operating and storage temperature ranges?
    The operating and storage temperature range is -55 to +150°C.
  7. What are some common applications for this MOSFET?
    Common applications include telecom and server power supplies, industrial power supplies, EV chargers, and UPS/solar power systems.
  8. How does this MOSFET handle avalanche conditions?
    This MOSFET is 100% avalanche tested, ensuring reliability under such conditions.
  9. What is the maximum lead temperature for soldering?
    The maximum lead temperature for soldering is 260°C.
  10. What is the thermal resistance from junction to case?
    The thermal resistance from junction to case (RθJC) is 0.41°C/W.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:281mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.1 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:44 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):155mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-883 (XDFN3) (1x0.6)
Package / Case:3-XFDFN
0 Remaining View Similar

In Stock

-
67

Please send RFQ , we will respond immediately.

Same Series
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV5S
DD15S20LV5S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S10000
CBC47W1S10000
CONN D-SUB RCPT 47POS CRIMP
CBC13W3S10HE0/AA
CBC13W3S10HE0/AA
CONN D-SUB RCPT 13POS CRIMP
DD26M20HT0/AA
DD26M20HT0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20WES
DD15S20WES
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200T0/AA
DD26S200T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10H0S/AA
CBC13W3S10H0S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S100V50
RD50S100V50
CONN D-SUB RCPT 50POS CRIMP
DD26S20WT0
DD26S20WT0
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V5X
DD44S32S0V5X
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220

Related Product By Brand

SZMMBZ5226BLT1G
SZMMBZ5226BLT1G
onsemi
DIODE ZENER 3.3V 225MW SOT23-3
MMBZ5244BLT1G
MMBZ5244BLT1G
onsemi
DIODE ZENER 14V 225MW SOT23-3
MMSZ16T1G
MMSZ16T1G
onsemi
DIODE ZENER 16V 500MW SOD123
1N5333BRLG
1N5333BRLG
onsemi
DIODE ZENER 3.3V 5W AXIAL
2SD1628G-TD-E
2SD1628G-TD-E
onsemi
TRANS NPN 20V 5A PCP
NTD3055L104
NTD3055L104
onsemi
MOSFET N-CH 60V 12A DPAK
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
MC74HC163ADR2G
MC74HC163ADR2G
onsemi
LOG CMOS COUNTER 4BIT SOIC16
NCP705MTADJTCG
NCP705MTADJTCG
onsemi
IC REG LIN POS ADJ 500MA 6WDFN
NCV8170AMX280TCG
NCV8170AMX280TCG
onsemi
IC REG LINEAR 2.8V 150MA 4XDFN
NCP584HSN33T1G
NCP584HSN33T1G
onsemi
IC REG LINEAR 3.3V 200MA SOT23-5