Overview
The FQD4P40TM is a P-Channel enhancement mode power field effect transistor (MOSFET) produced by onsemi. This device utilizes onsemi's proprietary planar stripe DMOS technology, which is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. Although this device is discontinued and not recommended for new designs, it remains relevant for existing applications and maintenance.
Key Specifications
| Parameter | Symbol | Unit | Min | Typ | Max |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | V | -400 | - | - |
| Continuous Drain Current (TC = 25°C) | ID | A | -2.7 | - | - |
| Pulsed Drain Current | IDM | A | -10.8 | - | - |
| Gate-Source Voltage | VGSS | V | ±30 | - | - |
| Static Drain-Source On-Resistance | RDS(on) | Ω | - | 2.44 | 3.1 |
| Thermal Resistance, Junction to Case | RθJC | °C/W | - | - | 2.5 |
| Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper) | RθJA | °C/W | - | - | 110 |
| Operating and Storage Temperature Range | TJ, TSTG | °C | -55 to +150 | - | - |
Key Features
- Low on-state resistance (RDS(on) = 3.1 Ω max. at VGS = -10 V, ID = -1.35 A)
- Low gate charge (Typ. 18 nC)
- Low Crss (Typ. 11 pF)
- 100% Avalanche tested
- High energy pulse withstand in avalanche and commutation modes
- Superior switching performance
- Thermal resistance: RθJC = 2.5 °C/W, RθJA = 110 °C/W (minimum pad of 2-oz copper)
Applications
The FQD4P40TM is well-suited for various high-power applications, including:
- Electronic lamp ballasts based on complementary half-bridge configurations
- Power switching and power management systems
- High-frequency switching applications
- Avalanche and commutation mode operations
Q & A
- What is the maximum drain-source voltage of the FQD4P40TM?
The maximum drain-source voltage (VDSS) is -400 V.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at 25°C is -2.7 A.
- What is the typical gate charge of the FQD4P40TM?
The typical total gate charge (Qg) is 18 nC.
- What is the thermal resistance from junction to case?
The thermal resistance from junction to case (RθJC) is 2.5 °C/W.
- Is the FQD4P40TM still recommended for new designs?
No, the FQD4P40TM is discontinued and not recommended for new designs. Contact an onsemi representative for alternative options.
- What is the maximum operating temperature range?
The operating and storage temperature range is -55°C to +150°C.
- What are the typical applications of the FQD4P40TM?
Typical applications include electronic lamp ballasts, power switching, and high-frequency switching.
- What is the maximum pulsed drain current rating?
The maximum pulsed drain current (IDM) is -10.8 A.
- What is the gate-source threshold voltage range?
The gate-source threshold voltage (VGS(th)) range is -3.0 V to -5.0 V.
- What is the reverse recovery time of the body diode?
The reverse recovery time (trr) of the body diode is approximately 260 ns.
