FQD2P40TM
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onsemi FQD2P40TM

Manufacturer No:
FQD2P40TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 400V 1.56A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD2P40TM is a P-Channel QFET MOSFET produced by onsemi. This device is designed as a dual-protected low-side smart, discrete component, featuring a standard 40V gate level power MOSFET. It is particularly noted for its leading on-resistance, making it suitable for motor driver applications. The FQD2P40TM also includes temperature and current limit protections, enhancing its reliability and performance in various power management scenarios.

Key Specifications

ParameterValue
Voltage Rating (Vds)400 V
Continuous Drain Current (Id)1.56 A (at Tc)
Power Dissipation (Pd)2.5 W (at Ta), 38 W (at Tc)
On-Resistance (Rds(on))Not specified in summary, but known for leading on-resistance
Package TypeSurface Mount TO-252AA

Key Features

  • Dual protection with temperature and current limit
  • P-Channel QFET MOSFET
  • Standard 40V gate level
  • Leading on-resistance for high performance
  • Suitable for motor driver applications

Applications

The FQD2P40TM is primarily used in motor driver applications due to its high performance and reliability. It can also be utilized in other power management scenarios where high voltage and current handling are required. Additional applications may include power supplies, DC-DC converters, and other high-power electronic systems.

Q & A

  1. What is the voltage rating of the FQD2P40TM MOSFET?
    The voltage rating of the FQD2P40TM MOSFET is 400 V.
  2. What is the continuous drain current of the FQD2P40TM?
    The continuous drain current of the FQD2P40TM is 1.56 A at Tc.
  3. What package type does the FQD2P40TM use?
    The FQD2P40TM uses a surface mount TO-252AA package.
  4. What are the key protections included in the FQD2P40TM?
    The FQD2P40TM includes temperature and current limit protections.
  5. What are the typical applications of the FQD2P40TM?
    The FQD2P40TM is typically used in motor driver applications and other high-power electronic systems.
  6. What is the power dissipation of the FQD2P40TM?
    The power dissipation of the FQD2P40TM is 2.5 W at Ta and 38 W at Tc.
  7. Why is the FQD2P40TM known for its performance?
    The FQD2P40TM is known for its leading on-resistance, which enhances its performance in high-power applications.
  8. Who is the manufacturer of the FQD2P40TM?
    The FQD2P40TM is manufactured by onsemi.
  9. Where can I find detailed specifications for the FQD2P40TM?
    Detailed specifications for the FQD2P40TM can be found on the datasheet available from sources like Mouser, Digi-Key, and the onsemi website.
  10. What is the significance of the QFET technology in the FQD2P40TM?
    The QFET technology in the FQD2P40TM refers to its P-Channel QFET MOSFET design, which is optimized for high performance and reliability.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:1.56A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.5Ohm @ 780mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 38W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
FQD2P40TF
FQD2P40TF
MOSFET P-CH 400V 1.56A DPAK
FQD2P40TF_F080
FQD2P40TF_F080
MOSFET P-CH 400V 1.56A DPAK

Similar Products

Part Number FQD2P40TM FQD4P40TM FQD2N40TM FQD2P40TF
Manufacturer onsemi onsemi onsemi Fairchild Semiconductor
Product Status Active Active Obsolete Obsolete
FET Type P-Channel P-Channel N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 400 V 400 V 400 V
Current - Continuous Drain (Id) @ 25°C 1.56A (Tc) 2.7A (Tc) 1.4A (Tc) 1.56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 6.5Ohm @ 780mA, 10V 3.1Ohm @ 1.35A, 10V 5.8Ohm @ 700mA, 10V 6.5Ohm @ 780mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 23 nC @ 10 V 5.5 nC @ 10 V 13 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V 680 pF @ 25 V 150 pF @ 25 V 350 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 2.5W (Ta), 38W (Tc) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 38W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA TO-252AA TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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