FDA28N50F
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onsemi FDA28N50F

Manufacturer No:
FDA28N50F
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 500V 28A TO3PN
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Product Introduction

Overview

The FDA28N50F is a high-voltage N-Channel MOSFET produced by onsemi. This device is part of the UniFET™ and FRFET® families, known for their high performance and reliability in various power management applications. The FDA28N50F is packaged in a TO-3P configuration, making it suitable for high-power applications where space efficiency is crucial.

Key Specifications

ParameterValue
Voltage Rating (Vds)500 V
Continuous Drain Current (Id)28 A
On-Resistance (Rds(on))140 mΩ @ 10 V, 14 A
Maximum Power Dissipation (Pd)310 W
Threshold Voltage (Vth)3 V @ 250 μA
Package TypeTO-3P

Key Features

  • High voltage rating of 500 V, making it suitable for high-voltage applications.
  • Low on-resistance of 140 mΩ @ 10 V, 14 A, which reduces power losses and improves efficiency.
  • High continuous drain current of 28 A, enabling it to handle high current loads.
  • Maximum power dissipation of 310 W, ensuring robust performance under demanding conditions.
  • Threshold voltage of 3 V @ 250 μA, providing a low threshold for switching.
  • TO-3P package, which is compact and suitable for high-power applications.

Applications

The FDA28N50F is designed for use in a variety of high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-voltage switching and power management systems.
  • Aerospace and defense electronics.
  • Industrial control and automation systems.

Q & A

  1. What is the voltage rating of the FDA28N50F MOSFET?
    The FDA28N50F has a voltage rating of 500 V.
  2. What is the continuous drain current of the FDA28N50F?
    The continuous drain current is 28 A.
  3. What is the on-resistance of the FDA28N50F?
    The on-resistance is 140 mΩ @ 10 V, 14 A.
  4. What is the maximum power dissipation of the FDA28N50F?
    The maximum power dissipation is 310 W.
  5. What is the package type of the FDA28N50F?
    The package type is TO-3P.
  6. Is the FDA28N50F still in production?
    No, the FDA28N50F is no longer manufactured, but substitutes are available.
  7. What are some common applications for the FDA28N50F?
    Common applications include power supplies, motor control systems, high-voltage switching, aerospace electronics, and industrial control systems.
  8. What is the threshold voltage of the FDA28N50F?
    The threshold voltage is 3 V @ 250 μA.
  9. Where can I find detailed specifications for the FDA28N50F?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Digi-Key and LCSC.
  10. Is the FDA28N50F RoHS compliant?
    Yes, the FDA28N50F is RoHS compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:175mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:105 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:5387 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):310W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PN
Package / Case:TO-3P-3, SC-65-3
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Similar Products

Part Number FDA28N50F FDA20N50F FDA24N50F FDA28N50
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Last Time Buy Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc) 22A (Tc) 24A (Tc) 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 175mOhm @ 14A, 10V 260mOhm @ 11A, 10V 200mOhm @ 12A, 10V 155mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V 65 nC @ 10 V 85 nC @ 10 V 105 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 5387 pF @ 25 V 3390 pF @ 25 V 4310 pF @ 25 V 5140 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 310W (Tc) 388W (Tc) 270W (Tc) 310W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-3PN TO-3PN TO-3PN TO-3PN
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

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