Overview
The FDA28N50 is an N-Channel UniFET™ FRFET® MOSFET produced by onsemi. This high-voltage MOSFET is part of onsemi’s UniFET family, which is based on planar stripe and DMOS technology. It is designed to reduce on-state resistance, enhance switching performance, and increase avalanche energy strength. The device is suitable for various switching power converter applications, including power factor correction (PFC), flat panel display (FPD) TV power, ATX power supplies, and electronic lamp ballasts.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDSS) | 500 | V |
| Gate to Source Voltage (VGSS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25°C | 28 | A |
| Continuous Drain Current (ID) at TC = 100°C | 17 | A |
| Pulsed Drain Current (IDM) | 112 | A |
| Single Pulsed Avalanche Energy (EAS) | 2352 | mJ |
| Power Dissipation (PD) at TC = 25°C | 310 | W |
| Thermal Resistance, Junction to Case (RθJC) | 0.4 | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | 40 | °C/W |
| On-State Resistance (RDS(on)) at VGS = 10 V, ID = 14 A | 122 mΩ (Typ.) | mΩ |
| Gate to Source Charge (Qgs) | 80 nC (Typ.) | nC |
| Gate to Drain Charge (Qgd) | 31 nC (Typ.) | nC |
| Turn-On Delay Time (td(on)) | 67 - 145 ns | ns |
| Turn-On Rise Time (tr) | 137 - 285 ns | ns |
| Turn-Off Delay Time (td(off)) | 192 - 395 ns | ns |
| Turn-Off Fall Time (tf) | 101 - 212 ns | ns |
| Maximum Continuous Drain to Source Diode Forward Current (IS) | 28 A | A |
| Maximum Pulsed Drain to Source Diode Forward Current (ISM) | 112 A | A |
| Drain to Source Diode Forward Voltage (VSD) | 1.5 V | V |
| Reverse Recovery Time (trr) | 266 ns | ns |
| Reverse Recovery Charge (Qrr) | 1.38 μC | μC |
Key Features
- Low On-State Resistance: RDS(on) = 122 mΩ (Typ.) at VGS = 10 V, ID = 14 A.
- Low Gate Charge: Typical gate charge of 80 nC.
- Low Crss: Typical Crss of 42 pF.
- 100% Avalanche Tested: Ensures robustness against avalanche conditions.
- Improved dv/dt Capability: Enhanced reverse recovery performance with dv/dt immunity of 15 V/ns.
- RoHS Compliant: Pb-free, halide-free, and compliant with RoHS standards.
Applications
- PDP TV Power Supplies: Suitable for plasma display panel TV power supplies.
- Uninterruptible Power Supplies (UPS): Used in UPS systems for reliable power backup.
- AC-DC Power Supplies: Ideal for various AC-DC power supply applications.
- Power Factor Correction (PFC): Used in PFC circuits to improve power factor.
- ATX Power Supplies: Suitable for ATX power supply units.
- Electronic Lamp Ballasts: Used in electronic lamp ballast applications.
Q & A
- What is the maximum drain to source voltage of the FDA28N50 MOSFET?
The maximum drain to source voltage (VDSS) is 500 V.
- What is the continuous drain current rating at 25°C and 100°C?
The continuous drain current (ID) is 28 A at TC = 25°C and 17 A at TC = 100°C.
- What is the typical on-state resistance of the FDA28N50 MOSFET?
The typical on-state resistance (RDS(on)) is 122 mΩ at VGS = 10 V, ID = 14 A.
- What are the typical gate charge values for the FDA28N50 MOSFET?
The typical gate to source charge (Qgs) is 80 nC and the typical gate to drain charge (Qgd) is 31 nC.
- Is the FDA28N50 MOSFET RoHS compliant?
Yes, the FDA28N50 MOSFET is Pb-free, halide-free, and RoHS compliant.
- What are the typical turn-on and turn-off times for the FDA28N50 MOSFET?
The turn-on delay time (td(on)) is 67 - 145 ns, the turn-on rise time (tr) is 137 - 285 ns, the turn-off delay time (td(off)) is 192 - 395 ns, and the turn-off fall time (tf) is 101 - 212 ns.
- What is the maximum continuous drain to source diode forward current?
The maximum continuous drain to source diode forward current (IS) is 28 A.
- What is the reverse recovery time and charge of the FDA28N50 MOSFET's body diode?
The reverse recovery time (trr) is 266 ns and the reverse recovery charge (Qrr) is 1.38 μC.
- What are the thermal resistance values for the FDA28N50 MOSFET?
The thermal resistance from junction to case (RθJC) is 0.4 °C/W and from junction to ambient (RθJA) is 40 °C/W.
- What are the common applications of the FDA28N50 MOSFET?
The FDA28N50 MOSFET is commonly used in PDP TV power supplies, UPS systems, AC-DC power supplies, PFC circuits, ATX power supplies, and electronic lamp ballasts.
- What technology is the FDA28N50 MOSFET based on?
The FDA28N50 MOSFET is based on planar stripe and DMOS technology.
