Overview
The NTB52N10T4G is a high-performance N-Channel Enhancement-Mode Power MOSFET produced by onsemi. This device is packaged in a D2PAK (TO-263) case and is designed for high-power applications requiring low on-resistance and high current handling. The NTB52N10T4G is lead-free and compliant with RoHS standards, making it suitable for a wide range of modern electronic systems.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 100 | Vdc |
| Gate-to-Source Voltage - Continuous | VGS | −20 to 40 | Vdc |
| Drain Current - Continuous @ TC = 25°C | ID | 52 | Adc |
| Drain Current - Continuous @ TC = 100°C | ID | 40 | Adc |
| Drain Current - Pulsed | IDM | 156 | Adc |
| Total Power Dissipation @ TC = 25°C | PD | 178 | W |
| Operating and Storage Temperature Range | TJ, Tstg | −55 to +150 | °C |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 800 | mJ |
| Thermal Resistance - Junction-to-Case | RJC | 0.7 | °C/W |
| Thermal Resistance - Junction-to-Ambient | RJA | 62.5 | °C/W |
| Maximum Lead Temperature for Soldering | TL | 260 | °C |
| On-Resistance (RDS(on)) @ VGS = 10 Vdc, ID = 26 Adc | RDS(on) | 23 mΩ | mΩ |
Key Features
- Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
- Avalanche Energy Specified
- IDSS and RDS(on) Specified at Elevated Temperature
- Mounting Information Provided for the D2PAK Package
- Pb-Free Packages Available
- Halogen-Free According to IEC 61249-2-21
- Surface Mount and Low-Profile Through-Hole Capabilities
Applications
- PWM Motor Controls
- Power Supplies
- Converters
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NTB52N10T4G?
The maximum drain-to-source voltage (VDSS) is 100 Vdc.
- What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 52 Adc.
- What is the total power dissipation (PD) at TC = 25°C?
The total power dissipation (PD) at TC = 25°C is 178 W.
- What is the operating and storage temperature range for the NTB52N10T4G?
The operating and storage temperature range is from -55°C to +150°C.
- What is the single pulse drain-to-source avalanche energy (EAS)?
The single pulse drain-to-source avalanche energy (EAS) is 800 mJ.
- What is the thermal resistance from junction to case (RJC)?
The thermal resistance from junction to case (RJC) is 0.7 °C/W.
- Is the NTB52N10T4G lead-free and RoHS compliant?
- What are some typical applications for the NTB52N10T4G?
Typical applications include PWM motor controls, power supplies, and converters.
- What is the maximum lead temperature for soldering purposes?
The maximum lead temperature for soldering purposes is 260°C.
- What is the on-resistance (RDS(on)) at VGS = 10 Vdc and ID = 26 Adc?
The on-resistance (RDS(on)) at VGS = 10 Vdc and ID = 26 Adc is typically 23 mΩ.
