NTB52N10G
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onsemi NTB52N10G

Manufacturer No:
NTB52N10G
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 100V 52A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTB52N10G is a high-performance N-Channel Enhancement Mode power MOSFET produced by onsemi. This device is designed to offer high current handling and low on-resistance, making it suitable for a variety of power management applications. The MOSFET is packaged in a TO-263 (D2PAK) package, which is known for its thermal efficiency and compact size.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)100 V
ID (Continuous Drain Current)52 A
RDS(on) (On-Resistance at VGS = 10 V)20 mΩ
VGS(th) (Threshold Voltage)2.0 - 4.0 V
PD (Maximum Power Dissipation)Dependent on package and thermal conditions
PackageTO-263 (D2PAK)

Key Features

  • High current capability of up to 52 A
  • Low on-resistance of 20 mΩ at VGS = 10 V
  • High voltage rating of 100 V
  • Compact TO-263 (D2PAK) package for efficient thermal management
  • RoHS compliant

Applications

The NTB52N10G MOSFET is versatile and can be used in various applications, including:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Automotive systems such as battery management and power steering
  • Industrial power management and control systems
  • Consumer electronics requiring high power efficiency

Q & A

  1. What is the maximum drain-source voltage of the NTB52N10G MOSFET?
    The maximum drain-source voltage is 100 V.
  2. What is the continuous drain current rating of the NTB52N10G?
    The continuous drain current rating is 52 A.
  3. What is the on-resistance of the NTB52N10G at VGS = 10 V?
    The on-resistance is 20 mΩ at VGS = 10 V.
  4. In what package is the NTB52N10G available?
    The NTB52N10G is available in the TO-263 (D2PAK) package.
  5. Is the NTB52N10G RoHS compliant?
    Yes, the NTB52N10G is RoHS compliant.
  6. What are some common applications for the NTB52N10G?
    Common applications include power supplies, motor control systems, automotive systems, industrial power management, and consumer electronics.
  7. What is the threshold voltage range for the NTB52N10G?
    The threshold voltage range is 2.0 - 4.0 V.
  8. How does the TO-263 package benefit the NTB52N10G?
    The TO-263 package provides efficient thermal management and is compact, making it suitable for high-power applications.
  9. Where can I find detailed specifications for the NTB52N10G?
    Detailed specifications can be found in the datasheet available on onsemi’s official website or through distributors like Mouser Electronics.
  10. Is the NTB52N10G suitable for high-frequency applications?
    While it is primarily designed for high-power applications, its suitability for high-frequency applications should be evaluated based on specific requirements and testing.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:30mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:135 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3150 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2W (Ta), 178W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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NTB52N10G
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