Overview
The FDMS86163P is a P-Channel MOSFET produced by onsemi, utilizing their advanced PowerTrench® process. This technology is designed to minimize on-state resistance while maintaining superior switching performance. The device is optimized for fast switching and load switch applications, making it suitable for a variety of high-performance electronic systems.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDS | -100 | V |
| Gate-to-Source Voltage | VGS | ±25 | V |
| Continuous Drain Current | ID | -50 | A |
| Pulsed Drain Current | ID | -100 | A |
| Power Dissipation | PD | 104 | W |
| On-State Resistance | rDS(on) | 22 mΩ at VGS = -10 V, ID = -7.9 A | mΩ |
| On-State Resistance | rDS(on) | 30 mΩ at VGS = -6 V, ID = -5.9 A | mΩ |
| Gate to Source Threshold Voltage | VGS(th) | -2 to -4 | V |
| Thermal Resistance, Junction to Case | RθJC | 1.2 | °C/W |
| Thermal Resistance, Junction to Ambient | RθJA | 50 | °C/W |
Key Features
- Very low RDS(on) mid voltage P-channel silicon technology optimized for low Qg
- Optimized for fast switching applications as well as load switch applications
- 100% UIL tested
- Pb-free, halogen-free/BFR-free, and RoHS compliant
- Advanced PowerTrench® process to minimize on-state resistance and maintain superior switching performance
Applications
- Active clamp switch
- Load switch
- Mobile communication infrastructure
Q & A
- What is the maximum drain-to-source voltage of the FDMS86163P?
The maximum drain-to-source voltage is -100 V.
- What is the continuous drain current rating of the FDMS86163P?
The continuous drain current rating is -50 A.
- What is the on-state resistance of the FDMS86163P at VGS = -10 V and ID = -7.9 A?
The on-state resistance is 22 mΩ.
- Is the FDMS86163P RoHS compliant?
- What are the typical applications of the FDMS86163P?
The FDMS86163P is typically used in active clamp switch and load switch applications, as well as in mobile communication infrastructure.
- What is the thermal resistance, junction to case, of the FDMS86163P?
The thermal resistance, junction to case, is 1.2 °C/W.
- What is the gate to source threshold voltage range of the FDMS86163P?
The gate to source threshold voltage range is -2 to -4 V.
- Is the FDMS86163P Pb-free and halogen-free/BFR-free?
- What is the maximum power dissipation of the FDMS86163P?
The maximum power dissipation is 104 W.
- What is the package type of the FDMS86163P?
The package type is PQFN-8.
