2N7002-TP
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Micro Commercial Co 2N7002-TP

Manufacturer No:
2N7002-TP
Manufacturer:
Micro Commercial Co
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT23
Delivery:
Payment:
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Product Introduction

Overview

The 2N7002-TP is a robust N-channel power MOSFET produced by Micro Commercial Co (MCC). This device is designed for reliable switching applications in harsh environments, featuring high current handling, low input capacitance, and a wide operating temperature range. It is particularly suitable for industrial control systems, motor drives, and other demanding applications.

Key Specifications

AttributeValue
FET TypeN-Channel
Drain-to-Source Voltage (Vdss)60V
Drain-Source On Resistance (Max)7.5Ω
Rated Power Dissipation200 mW
Maximum Current Handling115mA
Package StyleSOT-23 (SC-59, TO-236)
Mounting MethodSurface Mount
Operating Temperature Range-40°C to +125°C
Forward Transconductance (Min)80 mS

Key Features

  • High Current Handling: The 2N7002-TP can handle high currents up to 115mA.
  • Low Input Capacitance: This device features low input capacitance, reducing switching losses and improving overall system performance.
  • Wide Operating Temperature Range: The 2N7002-TP operates over a wide temperature range from -40°C to +125°C, making it suitable for industrial applications.

Applications

  • Industrial Control Systems: Ideal for industrial control systems requiring high current handling and low input capacitance.
  • Motor Drives: Suitable for motor drives, where high current handling and fast switching times are critical.
  • Power Supplies: Can be used in power supplies, where low input capacitance and high current handling are important.
  • Aerospace and Defense Systems: Suitable for use in aerospace and defense systems due to its robust performance characteristics.

Q & A

  • Q: What is the maximum current handling of the 2N7002-TP?
    A: The 2N7002-TP can handle currents up to 115mA.
  • Q: What is the operating temperature range of the 2N7002-TP?
    A: The 2N7002-TP operates over a wide temperature range from -40°C to +125°C.
  • Q: What is the drain-to-source voltage (Vdss) of the 2N7002-TP?
    A: The drain-to-source voltage (Vdss) of the 2N7002-TP is 60V.
  • Q: Can the 2N7002-TP be used in aerospace and defense applications?
    A: Yes, the 2N7002-TP is suitable for use in aerospace and defense systems.
  • Q: What is the package style of the 2N7002-TP?
    A: The package style of the 2N7002-TP is SOT-23 (SC-59, TO-236).
  • Q: What is the mounting method of the 2N7002-TP?
    A: The 2N7002-TP is a surface mount device.
  • Q: What is the rated power dissipation of the 2N7002-TP?
    A: The rated power dissipation of the 2N7002-TP is 200 mW.
  • Q: How do I connect the pins of the 2N7002-TP?
    A: Connect the drain pin to the positive power supply voltage, the source pin to the negative power supply voltage or ground, and apply a control signal to the gate pin to turn the MOSFET on and off.
  • Q: Are there any equivalent or complementary MOSFETs for the 2N7002-TP?
    A: Yes, equivalents include the STP16NF06L from STMicroelectronics and the FQP50N06L from Fairchild Semiconductor. The 2N7001-TP can be used as a complementary device for more demanding applications.
  • Q: What is the forward transconductance of the 2N7002-TP?
    A: The forward transconductance (min) of the 2N7002-TP is 80 mS.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number 2N7002-TP 2N7002K-TP 2N7002T-TP
Manufacturer Micro Commercial Co Micro Commercial Co Micro Commercial Co
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta) 340mA (Ta) 115mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 4.5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V 13.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 1V @ 1mA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) - ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 40 pF @ 10 V 50 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 200mW (Ta) 350mW (Ta) 150mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23 SOT-23 SOT-523
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SOT-523

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