Overview
The 2SJ652-1E is a P-Channel Power Field-Effect Transistor (MOSFET) manufactured by onsemi. This device is designed for high-reliability and high-performance applications across various industries. It features a robust design with high current handling capabilities, making it suitable for demanding power management systems such as motor control applications, power supplies, and DC-DC converters.
Key Specifications
| Parameter | Symbol | Conditions | Ratings | Unit |
|---|---|---|---|---|
| Package | - | - | TO-220F-3SG | - |
| FET Type | - | - | P-Channel MOSFET | - |
| Drain to Source Voltage (Vdss) | Vdss | - | -60 V | V |
| Gate to Source Voltage (Vgss) | Vgss | - | ±20 V | V |
| Drain Current (DC) (Id) | Id | - | -28 A | A |
| Drain Current (Pulse) (Idp) | Idp | PW ≤ 10μs, duty cycle ≤ 1% | -112 A | A |
| Allowable Power Dissipation (Pd) | Pd | Ta = 25°C | 2 W | W |
| Channel Temperature (Tch) | Tch | - | 150 °C | °C |
| Input Capacitance (Ciss) | Ciss | Vds = 20 V, f = 1 MHz | 4360 pF | pF |
| On-State Resistance (Rds(on)) | Rds(on) | Id = -14 A, Vgs = -10 V | 28.5 mΩ (typ.) | mΩ |
| Total Gate Charge (Qg) | Qg | Vds = -30 V, Vgs = -10 V, Id = -28 A | 80 nC | nC |
Key Features
- High Current Handling: Capable of handling up to 28 A of current, making it suitable for demanding power management applications.
- Robust Design: Features a reliable design with high ESD protection, ensuring durability in harsh environments.
- Wide Operating Temperature Range: Operates efficiently between -40°C and +150°C, allowing it to function reliably in various environmental conditions.
- Low On-State Resistance: With a typical on-state resistance of 28.5 mΩ, it minimizes power losses during operation.
- 4V Drive Capability: Can be driven with a gate voltage as low as 4 V, making it compatible with a wide range of control circuits.
Applications
The 2SJ652-1E is commonly used in various power management systems that require high current handling capabilities. Some of the key applications include:
- Motor Control Applications: Suitable for controlling high-current motors in industrial and automotive systems.
- Power Supplies: Used in power supply systems to manage high current and voltage levels efficiently.
- DC-DC Converters: Employed in DC-DC converters for high-efficiency power conversion.
- Industrial Automation Systems: Utilized in industrial automation for reliable and high-performance power management.
- Automotive Electronics: Designed to be used in automotive electronics where high reliability and performance are critical.
Q & A
- Q: What is the maximum current handling capability of the 2SJ652-1E?
A: It can handle up to 28 A of current. - Q: Can the 2SJ652-1E be used in automotive electronics?
A: Yes, it is designed to be used in automotive electronics and other harsh environments where high-reliability and high-performance are required. - Q: What is the maximum drain-to-source voltage (Vdss) of the 2SJ652-1E?
A: The maximum drain-to-source voltage is -60 V. - Q: What is the typical on-state resistance (Rds(on)) of the 2SJ652-1E?
A: The typical on-state resistance is 28.5 mΩ. - Q: What is the maximum gate-to-source voltage (Vgss) of the 2SJ652-1E?
A: The maximum gate-to-source voltage is ±20 V. - Q: What is the operating temperature range of the 2SJ652-1E?
A: The device operates efficiently between -40°C and +150°C. - Q: What is the package type of the 2SJ652-1E?
A: The 2SJ652-1E comes in a TO-220F-3SG package. - Q: What are some equivalent parts to the 2SJ652-1E?
A: Equivalent parts include the STP16NF06 from STMicroelectronics and the FQP6N60C from Fairchild Semiconductor. - Q: What is the total gate charge (Qg) of the 2SJ652-1E?
A: The total gate charge is 80 nC. - Q: What is the input capacitance (Ciss) of the 2SJ652-1E?
A: The input capacitance is 4360 pF.
