MVGSF1N02LT1G
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onsemi MVGSF1N02LT1G

Manufacturer No:
MVGSF1N02LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 750MA SOT23-3
Delivery:
Payment:
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Product Introduction

Overview

The MVGSF1N02LT1G is a miniature surface mount N-Channel MOSFET produced by onsemi. This device is designed for high efficiency and minimal power loss, making it ideal for space-sensitive power management applications. The MOSFET features a low RDS(on) and is packaged in a SOT-23 case, which saves board space and is suitable for various portable and battery-powered devices.

Key Specifications

Rating Symbol Value Unit
Drain-to-Source Voltage VDSS 20 Vdc
Gate-to-Source Voltage − Continuous VGS ±20 Vdc
Drain Current − Continuous @ TA = 25°C ID 750 mA
Pulsed Drain Current (tp ≤ 10 μs) IDM 2000 mA
Total Power Dissipation @ TA = 25°C PD 400 mW
Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C
Thermal Resistance, Junction-to-Ambient RθJA 300 °C/W
Maximum Lead Temperature for Soldering Purposes TL 260 °C
Gate Threshold Voltage VGS(th) 1.0 to 2.4 Vdc
Static Drain-to-Source On-Resistance RDS(on) 0.075 to 0.130 Ω

Key Features

  • Low RDS(on): Provides higher efficiency and extends battery life.
  • Miniature SOT-23 Surface Mount Package: Saves board space and is ideal for space-sensitive applications.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free and RoHS Compliant: Ensures environmental compliance.

Applications

The MVGSF1N02LT1G MOSFET is typically used in dc-dc converters and power management circuits for portable and battery-powered products. These include computers, printers, PCMCIA cards, cellular phones, and cordless telephones.

Q & A

  1. What is the maximum drain-to-source voltage of the MVGSF1N02LT1G MOSFET?

    The maximum drain-to-source voltage (VDSS) is 20 Vdc.

  2. What is the continuous drain current rating at 25°C?

    The continuous drain current (ID) is 750 mA.

  3. What is the thermal resistance from junction to ambient?

    The thermal resistance from junction to ambient (RθJA) is 300 °C/W.

  4. Is the MVGSF1N02LT1G MOSFET AEC-Q101 qualified?
  5. What is the operating and storage temperature range?

    The operating and storage temperature range is −55 to 150 °C.

  6. What is the typical gate threshold voltage?

    The typical gate threshold voltage (VGS(th)) ranges from 1.0 to 2.4 Vdc.

  7. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 260 °C.

  8. Is the MVGSF1N02LT1G Pb-Free and RoHS compliant?
  9. What are the typical applications of the MVGSF1N02LT1G MOSFET?

    The typical applications include dc-dc converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular phones, and cordless telephones.

  10. What is the package type of the MVGSF1N02LT1G MOSFET?

    The package type is SOT-23.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:90mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:125 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):400mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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In Stock

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Same Series
MGSF1N02LT1G
MGSF1N02LT1G
MOSFET N-CH 20V 750MA SOT23-3
MGSF1N02LT1
MGSF1N02LT1
MOSFET N-CH 20V 750MA SOT23-3

Similar Products

Part Number MVGSF1N02LT1G MVGSF1N03LT1G
Manufacturer onsemi onsemi
Product Status Not For New Designs Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 750mA (Ta) 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 1.2A, 10V 100mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 125 pF @ 5 V 140 pF @ 5 V
FET Feature - -
Power Dissipation (Max) 400mW (Ta) 420mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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