Overview
The MVGSF1N03LT1G is a single N-Channel MOSFET produced by onsemi, designed for high-efficiency power management in compact form factors. This device is housed in a miniature SOT-23 surface mount package, making it ideal for space-sensitive applications. The MVGSF1N03LT1G is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive and other stringent application requirements.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Drain-to-Source Voltage | VDSS | 30 | V |
Gate-to-Source Voltage | VGS | ±20 | V |
Continuous Drain Current (TA = 25°C) | ID | 2.1 | A |
Continuous Drain Current (TA = 85°C) | ID | 1.5 | A |
Power Dissipation (TA = 25°C) | PD | 0.69 | W |
Pulsed Drain Current (tp = 10 μs) | IDM | 6.0 | A |
ESD Capability (HBM Class 0) | ESD | 125 | V |
Operating Junction and Storage Temperature | TJ, TSTG | -55 to 150 | °C |
Source Current (Body Diode) | IS | 2.1 | A |
Lead Temperature for Soldering Purposes | TL | 260 | °C |
Gate Threshold Voltage | VGS(th) | 1.0 to 2.4 | V |
Static Drain-to-Source On-Resistance (VGS = 10 V, ID = 1.2 A) | RDS(on) | 0.08 to 0.125 | Ω |
Key Features
- Low RDS(on): Provides higher efficiency and extends battery life.
- Miniature SOT-23 Surface Mount Package: Saves board space and is ideal for space-sensitive power management circuitry.
- MV Prefix for Automotive and Other Applications: AEC-Q101 qualified and PPAP capable, meeting unique site and control change requirements.
- Pb-Free and RoHS Compliant: Ensures environmental compliance and safety.
Applications
The MVGSF1N03LT1G is suitable for various applications requiring efficient power management, including:
- DC-DC converters
- Power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
Q & A
- What is the maximum drain-to-source voltage of the MVGSF1N03LT1G?
The maximum drain-to-source voltage is 30 V.
- What is the continuous drain current at 25°C and 85°C?
The continuous drain current is 2.1 A at 25°C and 1.5 A at 85°C.
- What is the typical on-resistance of the MVGSF1N03LT1G?
The typical on-resistance is 0.08 to 0.125 Ω at VGS = 10 V and ID = 1.2 A.
- Is the MVGSF1N03LT1G AEC-Q101 qualified?
- What is the ESD capability of the MVGSF1N03LT1G?
The ESD capability is 125 V (HBM Class 0).
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is -55 to 150°C.
- What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes is 260°C.
- Is the MVGSF1N03LT1G Pb-Free and RoHS compliant?
- What are typical applications for the MVGSF1N03LT1G?
- What package type does the MVGSF1N03LT1G use?