MVGSF1N03LT1G
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onsemi MVGSF1N03LT1G

Manufacturer No:
MVGSF1N03LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 1.6A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MVGSF1N03LT1G is a single N-Channel MOSFET produced by onsemi, designed for high-efficiency power management in compact form factors. This device is housed in a miniature SOT-23 surface mount package, making it ideal for space-sensitive applications. The MVGSF1N03LT1G is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive and other stringent application requirements.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TA = 25°C) ID 2.1 A
Continuous Drain Current (TA = 85°C) ID 1.5 A
Power Dissipation (TA = 25°C) PD 0.69 W
Pulsed Drain Current (tp = 10 μs) IDM 6.0 A
ESD Capability (HBM Class 0) ESD 125 V
Operating Junction and Storage Temperature TJ, TSTG -55 to 150 °C
Source Current (Body Diode) IS 2.1 A
Lead Temperature for Soldering Purposes TL 260 °C
Gate Threshold Voltage VGS(th) 1.0 to 2.4 V
Static Drain-to-Source On-Resistance (VGS = 10 V, ID = 1.2 A) RDS(on) 0.08 to 0.125 Ω

Key Features

  • Low RDS(on): Provides higher efficiency and extends battery life.
  • Miniature SOT-23 Surface Mount Package: Saves board space and is ideal for space-sensitive power management circuitry.
  • MV Prefix for Automotive and Other Applications: AEC-Q101 qualified and PPAP capable, meeting unique site and control change requirements.
  • Pb-Free and RoHS Compliant: Ensures environmental compliance and safety.

Applications

The MVGSF1N03LT1G is suitable for various applications requiring efficient power management, including:

  • DC-DC converters
  • Power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

Q & A

  1. What is the maximum drain-to-source voltage of the MVGSF1N03LT1G?

    The maximum drain-to-source voltage is 30 V.

  2. What is the continuous drain current at 25°C and 85°C?

    The continuous drain current is 2.1 A at 25°C and 1.5 A at 85°C.

  3. What is the typical on-resistance of the MVGSF1N03LT1G?

    The typical on-resistance is 0.08 to 0.125 Ω at VGS = 10 V and ID = 1.2 A.

  4. Is the MVGSF1N03LT1G AEC-Q101 qualified?
  5. What is the ESD capability of the MVGSF1N03LT1G?

    The ESD capability is 125 V (HBM Class 0).

  6. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -55 to 150°C.

  7. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260°C.

  8. Is the MVGSF1N03LT1G Pb-Free and RoHS compliant?
  9. What are typical applications for the MVGSF1N03LT1G?
  10. What package type does the MVGSF1N03LT1G use?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:100mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):420mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
MVGSF1N03LT1G
MVGSF1N03LT1G
MOSFET N-CH 30V 1.6A SOT23
MGSF1N03LT1G
MGSF1N03LT1G
MOSFET N-CH 30V 1.6A SOT23-3
MGSF1N03LT3
MGSF1N03LT3
MOSFET N-CH 30V 1.6A SOT23-3

Similar Products

Part Number MVGSF1N03LT1G MVGSF1N02LT1G
Manufacturer onsemi onsemi
Product Status Not For New Designs Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta) 750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 1.2A, 10V 90mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 5 V 125 pF @ 5 V
FET Feature - -
Power Dissipation (Max) 420mW (Ta) 400mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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