MGSF1N03LT3G
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onsemi MGSF1N03LT3G

Manufacturer No:
MGSF1N03LT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 1.6A SOT23-3
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The MGSF1N03LT3G is a single N-Channel small signal MOSFET produced by onsemi. This miniature surface mount MOSFET is designed to minimize power loss and conserve energy, making it ideal for use in space-sensitive power management circuitry. It features a low RDS(on) which provides higher efficiency and extends battery life in various applications.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TA = 25°C) ID 2.1 A
Continuous Drain Current (TA = 85°C) ID 1.5 A
Power Dissipation (TA = 25°C) PD 0.69 W
Pulsed Drain Current (tp = 10 μs) IDM 6.0 A
Gate Threshold Voltage VGS(th) 1.0 - 2.4 V
Static Drain-to-Source On-Resistance (VGS = 10 V) RDS(on) 100 mΩ mΩ
Input Capacitance Ciss 140 pF
Output Capacitance Coss 100 pF
Transfer Capacitance Crss 40 pF
Operating Junction and Storage Temperature TJ, TSTG -55 to 150 °C
Lead Temperature for Soldering Purposes TL 260 °C

Key Features

  • Low RDS(on): Provides higher efficiency and extends battery life.
  • Miniature SOT-23 Surface Mount Package: Saves board space.
  • Pb-Free Packages: Available and RoHS compliant.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.

Applications

  • DC-DC converters
  • Power management in portable and battery-powered products
  • Computers
  • Printers
  • PCMCIA cards
  • Cellular phones
  • Cordless telephones

Q & A

  1. What is the maximum drain-to-source voltage of the MGSF1N03LT3G MOSFET?

    The maximum drain-to-source voltage (VDSS) is 30 V.

  2. What is the continuous drain current at 25°C and 85°C?

    The continuous drain current is 2.1 A at 25°C and 1.5 A at 85°C.

  3. What is the typical on-resistance of the MGSF1N03LT3G?

    The typical on-resistance (RDS(on)) is 100 mΩ at VGS = 10 V.

  4. What is the input capacitance of the MGSF1N03LT3G?

    The input capacitance (Ciss) is 140 pF.

  5. Is the MGSF1N03LT3G Pb-Free and RoHS compliant?
  6. What are the typical applications of the MGSF1N03LT3G?

    Typical applications include DC-DC converters, power management in portable and battery-powered products, computers, printers, PCMCIA cards, cellular phones, and cordless telephones.

  7. What is the operating junction and storage temperature range of the MGSF1N03LT3G?

    The operating junction and storage temperature range is -55 to 150°C.

  8. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260°C.

  9. Is the MGSF1N03LT3G AEC-Q101 qualified?
  10. What package type does the MGSF1N03LT3G come in?

    The MGSF1N03LT3G comes in a miniature SOT-23 surface mount package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:100mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):420mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
MVGSF1N03LT1G
MVGSF1N03LT1G
MOSFET N-CH 30V 1.6A SOT23
MGSF1N03LT1G
MGSF1N03LT1G
MOSFET N-CH 30V 1.6A SOT23-3
MGSF1N03LT3
MGSF1N03LT3
MOSFET N-CH 30V 1.6A SOT23-3

Similar Products

Part Number MGSF1N03LT3G MGSF1N03LT1G MGSF1N03LT3
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta) 1.6A (Ta) 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 1.2A, 10V 100mOhm @ 1.2A, 10V 100mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.4V @ 250µA 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 5 V 140 pF @ 5 V 140 pF @ 5 V
FET Feature - - -
Power Dissipation (Max) 420mW (Ta) 420mW (Ta) 420mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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