Overview
The MGSF1N03LT1G is a single N-Channel enhancement-mode MOSFET produced by onsemi. This device is packaged in a miniature SOT-23 surface mount package, making it ideal for space-sensitive power management circuitry. It features low RDS(on) to ensure higher efficiency and extended battery life, which is crucial for various portable and battery-powered applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA = 25°C) | ID | 2.1 | A |
| Continuous Drain Current (TA = 85°C) | ID | 1.5 | A |
| Power Dissipation (TA = 25°C) | PD | 0.69 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 6.0 | A |
| ESD Capability (Note 3) | ESD | 125 | V |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 to 150 | °C |
| Source Current (Body Diode) | IS | 2.1 | A |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Gate Threshold Voltage | VGS(th) | 1.0 to 2.4 | V |
| Static Drain-to-Source On-Resistance (VGS = 10 V, ID = 1.2 A) | rDS(on) | 0.08 to 0.125 | Ω |
Key Features
- Low RDS(on): Provides higher efficiency and extends battery life.
- Miniature SOT-23 Surface Mount Package: Saves board space and is ideal for space-sensitive applications.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
Applications
The MGSF1N03LT1G is typically used in dc-dc converters and power management circuits for portable and battery-powered products such as:
- Computers
- Printers
- PCMCIA cards
- Cellular and cordless telephones
Q & A
- What is the maximum drain-to-source voltage of the MGSF1N03LT1G?
The maximum drain-to-source voltage (VDSS) is 30 V.
- What is the continuous drain current at 25°C and 85°C?
The continuous drain current is 2.1 A at 25°C and 1.5 A at 85°C.
- What is the typical on-state resistance?
The typical on-state resistance (rDS(on)) is between 0.08 Ω and 0.125 Ω at VGS = 10 V and ID = 1.2 A.
- Is the MGSF1N03LT1G AEC-Q101 qualified?
Yes, the MGSF1N03LT1G is AEC-Q101 qualified and PPAP capable.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is -55°C to 150°C.
- What is the ESD capability of the device?
The ESD capability is 125 V (HBM Class 0).
- What package type is used for the MGSF1N03LT1G?
The device is packaged in a SOT-23 (TO-236) surface mount package.
- Is the MGSF1N03LT1G Pb-Free and RoHS compliant?
Yes, the device is Pb-Free and RoHS compliant.
- What are typical applications for the MGSF1N03LT1G?
Typical applications include dc-dc converters and power management in portable and battery-powered products like computers, printers, PCMCIA cards, and cellular phones.
- What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes is 260°C.
