MGSF1N02LT1G
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onsemi MGSF1N02LT1G

Manufacturer No:
MGSF1N02LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 750MA SOT23-3
Delivery:
Payment:
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Product Introduction

Overview

The MGSF1N02LT1G is an N-Channel Enhancement-Mode TMOS MOSFET produced by onsemi. This miniature surface mount MOSFET is designed to offer low RDS(on) to minimize power loss and conserve energy, making it ideal for space-sensitive power applications. The device is packaged in a 3-pin SOT-23 package, which is compact and suitable for a variety of modern electronic designs.

Key Specifications

ParameterValue
Current Rating750 mA
Voltage Rating20 V
Package Type3-Pin SOT-23
RDS(on)Low (typically around 0.18 Ω at VGS = 4.5 V)
Operating Temperature-55°C to 150°C

Key Features

  • Low RDS(on) to minimize power loss and conserve energy.
  • Compact 3-pin SOT-23 package suitable for space-sensitive designs.
  • N-Channel Enhancement-Mode TMOS MOSFET for efficient switching operations.
  • Logic Level Gate Drive for easy integration with microcontrollers and other logic circuits.

Applications

The MGSF1N02LT1G MOSFET is suitable for a variety of applications, including:

  • Power management in portable electronics.
  • Switching circuits in automotive systems.
  • DC-DC converters and power supplies.
  • General-purpose switching applications where low power loss and compact size are critical.

Q & A

  1. What is the current rating of the MGSF1N02LT1G MOSFET?
    The current rating of the MGSF1N02LT1G MOSFET is 750 mA.
  2. What is the voltage rating of the MGSF1N02LT1G MOSFET?
    The voltage rating of the MGSF1N02LT1G MOSFET is 20 V.
  3. What package type does the MGSF1N02LT1G MOSFET use?
    The MGSF1N02LT1G MOSFET is packaged in a 3-pin SOT-23 package.
  4. What is the typical RDS(on) of the MGSF1N02LT1G MOSFET?
    The typical RDS(on) of the MGSF1N02LT1G MOSFET is around 0.18 Ω at VGS = 4.5 V.
  5. What is the operating temperature range of the MGSF1N02LT1G MOSFET?
    The operating temperature range of the MGSF1N02LT1G MOSFET is -55°C to 150°C.
  6. Is the MGSF1N02LT1G MOSFET suitable for high-power applications?
    No, the MGSF1N02LT1G MOSFET is more suited for low to medium power applications due to its current and voltage ratings.
  7. Can the MGSF1N02LT1G MOSFET be used in automotive systems?
    Yes, the MGSF1N02LT1G MOSFET can be used in automotive systems due to its robust specifications and compact size.
  8. What type of gate drive does the MGSF1N02LT1G MOSFET require?
    The MGSF1N02LT1G MOSFET requires a logic level gate drive, making it easy to integrate with microcontrollers and other logic circuits.
  9. Is the MGSF1N02LT1G MOSFET available from major distributors?
    Yes, the MGSF1N02LT1G MOSFET is available from major distributors such as RS Components and Mouser Electronics.
  10. What are some common applications for the MGSF1N02LT1G MOSFET?
    Common applications include power management in portable electronics, switching circuits in automotive systems, DC-DC converters, and general-purpose switching applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:90mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:125 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):400mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
MGSF1N02LT1G
MGSF1N02LT1G
MOSFET N-CH 20V 750MA SOT23-3
MGSF1N02LT1
MGSF1N02LT1
MOSFET N-CH 20V 750MA SOT23-3

Similar Products

Part Number MGSF1N02LT1G MGSF1N03LT1G MGSF1N02LT1
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 750mA (Ta) 1.6A (Ta) 750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 1.2A, 10V 100mOhm @ 1.2A, 10V 90mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.4V @ 250µA 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 125 pF @ 5 V 140 pF @ 5 V 125 pF @ 5 V
FET Feature - - -
Power Dissipation (Max) 400mW (Ta) 420mW (Ta) 400mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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