FDMS86350ET80
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onsemi FDMS86350ET80

Manufacturer No:
FDMS86350ET80
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 25A/198A POWER56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS86350ET80 is an N-Channel PowerTrench® MOSFET produced by ON Semiconductor. This device is designed to offer high performance and efficiency, making it suitable for a variety of power management applications. The MOSFET is fabricated using ON Semiconductor's advanced PowerTrench process, which minimizes on-state resistance while maintaining superior switching performance.

Key Specifications

ParameterValue
Maximum Drain-Source Voltage (Vds)80 V
Maximum Drain Current (Id)198 A
Maximum Gate-Source Voltage (Vgs)20 V
Gate-Threshold Voltage (Vgs(th))4.5 V
Maximum Junction Temperature (Tj)175 °C
On-State Resistance (Rds(on))0.0024 Ω at Vgs = 10 V, Id = 25 A
Total Gate Charge (Qg)110 nC
Rise Time (tr)34 ns
Output Capacitance (Coss)1370 pF
PackagePOWER56

Key Features

  • Low on-state resistance (Rds(on)) of 0.0024 Ω at Vgs = 10 V, Id = 25 A, enhancing efficiency in power management.
  • High maximum drain current of 198 A, suitable for high-power applications.
  • Maximum drain-source voltage of 80 V, providing robust voltage handling.
  • Advanced PowerTrench process for superior switching performance and minimized switch node ringing.
  • RoHS compliant and qualified to AEC Q101 standards.

Applications

  • Automotive engine control and powertrain management.
  • Solenoid and motor drivers.
  • Integrated starter/alternator systems.
  • Electronic steering systems.
  • DC/DC converters using synchronous or asynchronous configurations.

Q & A

  1. What is the maximum drain-source voltage of the FDMS86350ET80 MOSFET?
    The maximum drain-source voltage is 80 V.
  2. What is the maximum drain current of the FDMS86350ET80 MOSFET?
    The maximum drain current is 198 A.
  3. What is the on-state resistance (Rds(on)) of the FDMS86350ET80 MOSFET?
    The on-state resistance is 0.0024 Ω at Vgs = 10 V, Id = 25 A.
  4. What is the maximum junction temperature of the FDMS86350ET80 MOSFET?
    The maximum junction temperature is 175 °C.
  5. Is the FDMS86350ET80 MOSFET RoHS compliant?
    Yes, the FDMS86350ET80 MOSFET is RoHS compliant.
  6. What package type is the FDMS86350ET80 MOSFET available in?
    The FDMS86350ET80 MOSFET is available in the POWER56 package.
  7. What are some common applications of the FDMS86350ET80 MOSFET?
    Common applications include automotive engine control, powertrain management, solenoid and motor drivers, and integrated starter/alternator systems.
  8. What is the gate-threshold voltage (Vgs(th)) of the FDMS86350ET80 MOSFET?
    The gate-threshold voltage is 4.5 V.
  9. What is the total gate charge (Qg) of the FDMS86350ET80 MOSFET?
    The total gate charge is 110 nC.
  10. Is the FDMS86350ET80 MOSFET qualified to any specific automotive standards?
    Yes, it is qualified to AEC Q101 standards.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:25A (Ta), 198A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:155 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8030 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):3.3W (Ta), 187W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
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