FDMS86350ET80
  • Share:

onsemi FDMS86350ET80

Manufacturer No:
FDMS86350ET80
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 25A/198A POWER56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS86350ET80 is an N-Channel PowerTrench® MOSFET produced by ON Semiconductor. This device is designed to offer high performance and efficiency, making it suitable for a variety of power management applications. The MOSFET is fabricated using ON Semiconductor's advanced PowerTrench process, which minimizes on-state resistance while maintaining superior switching performance.

Key Specifications

ParameterValue
Maximum Drain-Source Voltage (Vds)80 V
Maximum Drain Current (Id)198 A
Maximum Gate-Source Voltage (Vgs)20 V
Gate-Threshold Voltage (Vgs(th))4.5 V
Maximum Junction Temperature (Tj)175 °C
On-State Resistance (Rds(on))0.0024 Ω at Vgs = 10 V, Id = 25 A
Total Gate Charge (Qg)110 nC
Rise Time (tr)34 ns
Output Capacitance (Coss)1370 pF
PackagePOWER56

Key Features

  • Low on-state resistance (Rds(on)) of 0.0024 Ω at Vgs = 10 V, Id = 25 A, enhancing efficiency in power management.
  • High maximum drain current of 198 A, suitable for high-power applications.
  • Maximum drain-source voltage of 80 V, providing robust voltage handling.
  • Advanced PowerTrench process for superior switching performance and minimized switch node ringing.
  • RoHS compliant and qualified to AEC Q101 standards.

Applications

  • Automotive engine control and powertrain management.
  • Solenoid and motor drivers.
  • Integrated starter/alternator systems.
  • Electronic steering systems.
  • DC/DC converters using synchronous or asynchronous configurations.

Q & A

  1. What is the maximum drain-source voltage of the FDMS86350ET80 MOSFET?
    The maximum drain-source voltage is 80 V.
  2. What is the maximum drain current of the FDMS86350ET80 MOSFET?
    The maximum drain current is 198 A.
  3. What is the on-state resistance (Rds(on)) of the FDMS86350ET80 MOSFET?
    The on-state resistance is 0.0024 Ω at Vgs = 10 V, Id = 25 A.
  4. What is the maximum junction temperature of the FDMS86350ET80 MOSFET?
    The maximum junction temperature is 175 °C.
  5. Is the FDMS86350ET80 MOSFET RoHS compliant?
    Yes, the FDMS86350ET80 MOSFET is RoHS compliant.
  6. What package type is the FDMS86350ET80 MOSFET available in?
    The FDMS86350ET80 MOSFET is available in the POWER56 package.
  7. What are some common applications of the FDMS86350ET80 MOSFET?
    Common applications include automotive engine control, powertrain management, solenoid and motor drivers, and integrated starter/alternator systems.
  8. What is the gate-threshold voltage (Vgs(th)) of the FDMS86350ET80 MOSFET?
    The gate-threshold voltage is 4.5 V.
  9. What is the total gate charge (Qg) of the FDMS86350ET80 MOSFET?
    The total gate charge is 110 nC.
  10. Is the FDMS86350ET80 MOSFET qualified to any specific automotive standards?
    Yes, it is qualified to AEC Q101 standards.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:25A (Ta), 198A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:155 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8030 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):3.3W (Ta), 187W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$6.40
36

Please send RFQ , we will respond immediately.

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN

Related Product By Brand

ESD9D5.0ST5G
ESD9D5.0ST5G
onsemi
TVS DIODE 5VWM 13.5VC SOD923
MMSZ4690T1G
MMSZ4690T1G
onsemi
DIODE ZENER 5.6V 500MW SOD123
1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
2SA2222SG
2SA2222SG
onsemi
TRANS PNP 50V 10A TO220ML
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
MC33072DR2G
MC33072DR2G
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
MC74AC139DR2G
MC74AC139DR2G
onsemi
IC DECODER/DEMUX 1X2:4 16SOIC
MC34161DMR2G
MC34161DMR2G
onsemi
IC SUPERVISOR 2 CHANNEL MICRO8
CAT811STBI-T3
CAT811STBI-T3
onsemi
IC SUPERVISOR 1 CHANNEL SOT143
LM337TG
LM337TG
onsemi
IC REG LIN NEG ADJ 1.5A TO220