CSD17575Q3
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Texas Instruments CSD17575Q3

Manufacturer No:
CSD17575Q3
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 60A 8VSON
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The Texas Instruments CSD17575Q3 is a 30V N-Channel NexFET Power MOSFET designed for high-performance power conversion applications. This MOSFET is part of Texas Instruments' NexFET family, known for its low on-state resistance and low gate charge, making it ideal for synchronous FET applications and point of load synchronous buck converters. The device is packaged in a VSON-CLIP-8 (3.3x3.3) package, which helps in minimizing thermal resistance and enhancing overall efficiency.

Key Specifications

ParameterDescription
ManufacturerTexas Instruments
Part NumberCSD17575Q3
PackageVSON-CLIP-8 (3.3x3.3)
VDS (Drain-to-Source Voltage)30 V
RDS(on) (On-State Resistance)1.9 mΩ @ 10 V, 25 A
ID (Continuous Drain Current)60 A
VGS(th) (Threshold Voltage)Typically around 1.4 V
Qg (Gate Charge)Low gate charge
Thermal Resistance (RθJA)Max 160°C/W when mounted on minimum pad area of 1 inch^2 of 2 oz. Cu.
ComplianceRoHS compliant

Key Features

  • Low on-state resistance (RDS(on)) of 1.9 mΩ @ 10 V, 25 A, reducing power losses.
  • Low gate charge (Qg) for efficient switching.
  • High continuous drain current (ID) of 60 A.
  • Low thermal resistance due to the VSON-CLIP-8 package.
  • Optimized for synchronous FET applications and point of load synchronous buck converters.
  • RoHS compliant, ensuring environmental sustainability.

Applications

The CSD17575Q3 is suitable for various high-performance power conversion applications, including:

  • Networking systems
  • Telecom systems
  • Computing systems
  • Synchronous buck converters
  • Point of load (POL) converters

Q & A

  1. What is the maximum drain-to-source voltage (VDS) of the CSD17575Q3?
    The maximum VDS is 30 V.
  2. What is the on-state resistance (RDS(on)) of the CSD17575Q3?
    The RDS(on) is 1.9 mΩ @ 10 V, 25 A.
  3. What is the continuous drain current (ID) of the CSD17575Q3?
    The continuous drain current is 60 A.
  4. What package type is the CSD17575Q3 available in?
    The CSD17575Q3 is available in a VSON-CLIP-8 (3.3x3.3) package.
  5. Is the CSD17575Q3 RoHS compliant?
    Yes, the CSD17575Q3 is RoHS compliant.
  6. What are the typical applications of the CSD17575Q3?
    The CSD17575Q3 is typically used in networking, telecom, and computing systems, as well as in synchronous buck converters and point of load converters.
  7. What is the thermal resistance (RθJA) of the CSD17575Q3?
    The thermal resistance is max 160°C/W when mounted on minimum pad area of 1 inch^2 of 2 oz. Cu.
  8. What is the gate charge (Qg) of the CSD17575Q3?
    The gate charge is low, which is beneficial for efficient switching.
  9. Where can I find the datasheet for the CSD17575Q3?
    The datasheet can be found on the Texas Instruments website or through various electronic component distributors.
  10. What is the threshold voltage (VGS(th)) of the CSD17575Q3?
    The threshold voltage is typically around 1.4 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:60A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4420 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 108W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSON-CLIP (3.3x3.3)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD17575Q3 CSD17575Q3T
Manufacturer Texas Instruments Texas Instruments
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 60A (Ta) 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 25A, 10V 2.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250µA 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 4.5 V 30 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4420 pF @ 15 V 4420 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.8W (Ta), 108W (Tc) 2.8W (Ta), 108W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-VSON-CLIP (3.3x3.3) 8-VSON-CLIP (3.3x3.3)
Package / Case 8-PowerTDFN 8-PowerTDFN

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